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    TRANSISTOR SOT223 Search Results

    TRANSISTOR SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,


    Original     		BFG135 OT223 MSB002 R77/03/pp16 PDF

    BFG97

    Abstract: BFG31 TRANSISTOR BFg97 sc7313
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


    Original     		BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 BFG97 BFG31 TRANSISTOR BFg97 sc7313 PDF

    bfg97

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223


    Original     		BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 bfg97 PDF

    bfg135 application note

    Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,


    Original     		BFG135 OT223 BFG135 MSB002 OT223. R77/03/pp16 771-BFG135-T/R bfg135 application note bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115 PDF

    BFG135 amplifier

    Abstract: SC7313 BFG135 bfg135 application note MBB298
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,


    Original     		BFG135 OT223 MSB002 R77/03/pp16 BFG135 amplifier SC7313 BFG135 bfg135 application note MBB298 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended


    Original     		BFG198 OT223 MSB002 OT223. R77/03/pp14 PDF

    BFG198

    Abstract: microstripline
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended


    Original     		BFG198 OT223 MSB002 OT223. R77/03/pp14 BFG198 microstripline PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		DTA143EE 416/SC PDF

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		DTA114YE 416/SC 6aa marking PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    transistor sc59 marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		DTC114TE DTC114TE 416/SC transistor sc59 marking PDF

    6aa marking

    Abstract: 327 SOT-6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6 PDF

    Philips 2222 050 capacitor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


    OCR Scan     		BFG135 OT223 MSB002 OT223. 711062b 110fi2b 711Da2b Philips 2222 050 capacitor PDF

    BFG35

    Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan     		BFG35 OT223 OT223. MSA035 TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN power transistor BDP31 FEATURES • SOT223 package. DESCRIPTION NPN power transistor in a plastic SOT223 package for general purpose, medium power applications. PNP complement is BDP32. PINNING - SOT223 PIN


    OCR Scan     		OT223 BDP32. BDP31 PDF

    BFG35 amplifier

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan     		OT223 I3FG55. BFG35 OT223. MBB364 BFG35 amplifier PDF

    tm1101

    Abstract: Diode schottky eb PZTM1101 PZTM1102
    Text: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.


    OCR Scan     		PZTM1101 OT223 PZTM1102. TM1101. OT223) OT223. 7110flEb tm1101 Diode schottky eb PZTM1101 PZTM1102 PDF

    MSA035

    Abstract: BFQ226 hh sot223 NPN, Si, POWER TRANSISTOR, PLASTIC
    Text: Philips Semiconductors Product specification NPN video transistor BFQ226 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package.


    OCR Scan     		BFQ226 OT223 OT223. MBG495 7110flEb MSA035 711Dfl2b BFQ226 hh sot223 NPN, Si, POWER TRANSISTOR, PLASTIC PDF

    c151i

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT223 PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT a > N-channel enhancement mode fiefd-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		BU4C481-60A OT223 K481-60A c151i PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended tor cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.


    OCR Scan     		BFQ246 OT223 OT223. BG513 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN video transistor BFQ226 APPLICATIONS • Primarily intended ’or cascode output and buffer stages in high resolution colour monitors. DESCRIPTION NPN silicon transistor encapsulated In a 4-lead plastic SOT223 package.


    OCR Scan     		OT223 OT223. BFQ226 MS800Z MBG493 WBG496 PDF

    MSA035

    Abstract: BFQ246 MSB002
    Text: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.


    OCR Scan     		OT223 7110fl2b BFQ246 MSA035â OT223. 711005t. MSA035 BFQ246 MSB002 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN video transistor BFQ166 FEATURES DESCRIPTION •Low output capacitance NPN video transistor in a SOT223 plastic package. • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability


    OCR Scan     		BFQ166 OT223 OT223) PDF