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    TRANSISTOR SOT23 PF OA Search Results

    TRANSISTOR SOT23 PF OA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 PF OA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    MMBT5088

    Abstract: 50K MARKING SOT 23 MMBT5089 50K MARKING SOT23 5088lt1
    Text: MMBT5088 MMBT5089 Low Noise NPN Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead Pb -Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Symbol V CE O


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    PDF MMBT5088 MMBT5089 OT-23 5088LT1 5089LT1 13-Jan-06 OT-23 MMBT5088 50K MARKING SOT 23 MMBT5089 50K MARKING SOT23 5088lt1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL QUICK REFERENCE DATA VDS = -30 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION


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    PDF BSH202 BSH202

    BSH205

    Abstract: smd transistor JE 45 smd transistor ISS smd transistor JE
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 QUICK REFERENCE DATA SYMBOL VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


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    PDF BSH205 BSH205 smd transistor JE 45 smd transistor ISS smd transistor JE

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH203 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V DS = -3 0 V


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    PDF BSH203 BSH203

    ld smd transistor LD 33

    Abstract: BSH105N
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V


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    PDF BSH105 BSH105 ld smd transistor LD 33 BSH105N

    25CC

    Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
    Text: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd


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    p705

    Abstract: No abstract text available
    Text: Central CMPT591E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ENHANCED <E > S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the


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    PDF CMPT591E OT-23 500mA 100MHz 30-August2D01) OT-23 p705

    339 marking code transistor

    Abstract: 338 sot-23 491 marking transistor marking 491 sot23 339 SOT23
    Text: Central" CMPT491E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEM ICONDUCTOR CMPT491E type is an Enhanced version of the industry stan­ dard 491 NPN silicon transistor. This device is manufactured by the epitaxial planar process and


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    PDF CMPT491E OT-23 500mA 02-December OT-23 339 marking code transistor 338 sot-23 491 marking transistor marking 491 sot23 339 SOT23

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    Abstract: No abstract text available
    Text: Central CMPT591E Semiconductor Corp. E N H A N C E D S P E C IF IC A T IO N SURFACE MOUNT PNP SILICON TRANSISTOR EN H AN CED <E> - 'V S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP


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    PDF CMPT591E OT-23 CMPT491E 500mA CP705 30-August

    MMBA811C6

    Abstract: MMBA812M5 fr5 transistor MMBA812M6 MMBC1622D6 25CC BSS79B BSS79C BSS82B BSS82C
    Text: motorola sc 6367254 -c x s t r s / r f > MOTOROLA S C Tb DE 1 CXSTRS/R F M ax im u m r a t i n g s 96 D 8 1 9 6 9 Value VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc lc 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C Ro ja


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    PDF b3b7254 BSS79B BSS79C MPS3904 MMBC1622D6 MMBC1622D7 MMBA811C6 MMBA812M5 fr5 transistor MMBA812M6 25CC BSS79B BSS79C BSS82B BSS82C

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH201 SYMBOL QUICK REFERENCE DATA VDS = -60 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION


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    PDF BSH201 BSH201

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    Untitled

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC MAE D • b7TflSflO 0001453 TT3 ■ OTK i / n u r i civ Product Bulletin HCT2907M May 1990 ^ r - *» -» /N /s Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0 -37 - , 1. 1 6 7 *1 D 0.125 0.115 0.015 0.085


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    PDF HCT2907M HCT2907M JAN2N2907A 500mA 150mA, 500mA,

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    Untitled

    Abstract: No abstract text available
    Text: 0 OPTEK Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV .0 3 6 ( 0 . 9 1 .02 4 ( 0 . 6 1 ) I 3 à -024 ( 0 .6 1 ) .01 6 ( 0 . 4 1 ) J * .0 7 8 (1 .9 6 ) .0 2 3 ( 0 . 5 6 ) .071 .03 9 ( 0 . 9 9 )


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    PDF HCT7000M HCT7000M, HCT7000MTX, HCT7000MTXV 200mA

    12w sot23

    Abstract: transistor sot23 pf oa
    Text: Illl = ^ = Illl SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)


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    PDF 2N2484CSM 30MHz 140kHz 12w sot23 transistor sot23 pf oa

    2N2907A sot-23

    Abstract: JAN2N2907A 2N2907A surface mount 2N2907A HCT2907M JAN2N2907
    Text: O P TE K T EC H N O L O G Y INC MAE ti7TûSÛ0 0 0 0 1 4 5 3 D TT3 • I OTK n, y jr I civ Product Bulletin HCT2907M May 1990 T'iT'O1 1 ! Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0.125 0.115 3.18 (2.92) 0.015 0.085 (2.67)


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    PDF HCT2907M HCT2907M JAN2N2907A MIL-S-19500 OT-23 2N2907A 100MHz 100kHz 2N2907A sot-23 JAN2N2907A 2N2907A surface mount JAN2N2907

    PBR941

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y iI T PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor


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    PDF PBR941 PBR941 125104/1200/05/pp16

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = IN I SEME 2N3019CSM LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ± 0.10 (0.02 ± 0 .0 0 4 ) • SILICON PLANAR EPITAXIAL NPN


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    PDF 2N3019CSM 150mA 500mA 150mA 20MHz

    2N3904CSM

    Abstract: No abstract text available
    Text: Illl = ^ = Illl SEME 2N3904CSM LAB GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004) (0 .0 1 2 ) “W i


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    PDF 2N3904CSM 2N3904CSM

    Untitled

    Abstract: No abstract text available
    Text: Illl = ^ = Illl SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES ( 0.51 ± 0.10 0.02 ± 0 .004 )


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    PDF 2N2907ACSM 100MHz 150mA

    2N2222ACSM

    Abstract: SOT23 transistor 2N2222A 2N2222A LCC1
    Text: Illl = ^ = Illl SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 0.51 ± 0.10 ( 0.02 ± 0 . 004 )


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    PDF 2N2222ACSM 100MHz 150mA 150mA 2N2222ACSM SOT23 transistor 2N2222A 2N2222A LCC1

    bc394

    Abstract: No abstract text available
    Text: nil Vrrr= mi BC394CSM SEME LAB HIGH VOLTAGE NPN AMPLIFIER TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 0.51 ±0.10 (0.02 ± 0.004) (0 .0 1 2 ) • SILICON PLANAR EPITAXIAL NPN


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    PDF BC394CSM bc394