MPSA13L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V ORDERING INFORMATION Order Number Package Lead Free
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MPSA13
MPSA13
MPSA13L-AB3-R
MPSA13G-AB3-R
OT-89
MPSA13L-T92-B
MPSA13G-T92-B
MPSA13L-T92-K
MPSA13G-T92-K
QW-R208-001
MPSA13L
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2SB772S
Abstract: 2SB772SL-AB3-R 2SB772S-AB3-R 2SD882S
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES
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2SB772S
2SB772S
2SD882S
OT-89
2SB772SL
2SB772S-AB3-R
2SB772SL-AB3-R
QW-R208-002
2SB772SL-AB3-R
2SD882S
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ZXTN5551Z
Abstract: TS16949 ZXTP5401Z ZXTN5551ZTA
Text: ZXTN5551Z 160V, SOT89, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 1.2W Complementary part number ZXTP5401Z Description C A high voltage NPN transistor in a small outline surface mount package Features • 160V rating
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ZXTN5551Z
600mA
ZXTP5401Z
ZXTN5551ZTA
D-81541
ZXTN5551Z
TS16949
ZXTP5401Z
ZXTN5551ZTA
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2SC2945
Abstract: QK SOT89 2SC2954 mark qk sot
Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF
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2SC2954
2SC2954
2SC2945
QK SOT89
mark qk sot
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)
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2SB1386
2SB1386
OT-89
QW-R208-019
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.
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2SB1260
2SB1260
OT-89
O-252
2SB1260L
2SB1260-x-AB3-F-R
2SB1260L-x-AB3-F-R
2SB1260-x-TN3-F-R
2SB1260L-x-TN3-F-R
2SB1260-x-TN3-F-T
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2SB1132G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA/-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
2SB1132L-x-TN3-T
2SB1132G-x-TN3-T
OT-89
2SB1132G
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. SOT-223
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2SB772S
2SB772S
OT-223
OT-89
2SD882S
2SB772SL-x-AA3-R
2SB772SL-x-AB3-R
2SB772SL-x-T92-B
2SB772SL-x-T92-K
2SB772SG-x-AA3-R
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Untitled
Abstract: No abstract text available
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
OT-89
SGA9089Z
50MHz
05GHz
44GHz
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89
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2SB1260
2SB1260
OT-89
100ms
QW-R208-017
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
OT-89
O-252
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for
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HE8050
HE8050
HE8550
HE8050L-x-AB3-R
HE8050G-x-AB3-R
OT-89
HE8050L-x-AE3-R
HE8050G-x-AE3-R
OT-23
HE8050L-x-T92-B
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to223
Abstract: No abstract text available
Text: 2SD2403Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Features D1 A • This transistor is also available in the TO-223 case with the type designation PZT2403 E E1 • NPN Silicon Epitaxial Planar Transistor for
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2SD2403Q
OT-89
O-223
PZT2403
OT-89
100MHz
01-Jun-2002
to223
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ZXTN19060CZ
Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19060CZ
-80mV
ZXTN19060CZ
ZXTP19060CZTA
D-81541
ZXTN19060CZ
TS16949
ZXTP19060CZ
ZXTP19060CZTA
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Transistor TL 31 AC
Abstract: j142
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from
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SGA9089Z
OT-89
SGA9089Z
50MHz
44GHz
170mA
DS110606
Transistor TL 31 AC
j142
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER
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2SD1664
2SD1664
500mA/50mA)
2SB1132.
OT-89
QW-R208-025
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Untitled
Abstract: No abstract text available
Text: UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose
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HE8050
HE8050
HE8550
OT-89
QW-R208-013
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2sa1013
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.
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2SA1013
2SA1013
2SA1013L-x-AB3-R
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
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SGA9289Z
Abstract: No abstract text available
Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This
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SGA9289Z
OT-89
SGA9289Z
SGA9289Zâ
SGA9289ZSQ
SGA9289ZSR
SGA9289Z-EVB1
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.
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2SA1013
2SA1013
2SA1013L-x-AB3-R
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
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Untitled
Abstract: No abstract text available
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
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SGA9189Z
OT-89
SGA9189Z
39dBm,
SGA9189Zâ
SGA9189ZSQ
SGA9189ZSR
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marking 951
Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
Text: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2012Z
Powe26100
marking 951
SOT89 transistor marking 5A
ZXTP2012Z
ZXTP2012ZTA
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ZX5T853Z
Abstract: ZX5T853ZTA
Text: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T853Z
ZX5T853ZTA
ZX5T853Z
ZX5T853ZTA
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FCX555
Abstract: FCX555TA 100MHZ TS-4020
Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management
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FCX555
-180V
FCX555TA
FCX555
FCX555TA
100MHZ
TS-4020
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