BFY64
Abstract: bfx64
Text: SGS-THOMSON B FY 64 R!tlD EæilLI(g'iri iD(SS HIG H-CURRENT GENERAL PURPOSE TRANSISTOR D E S C R IP T IO N The BFX64 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is designed for digital and analog applications at current levels
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BFX64
BFY64
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2SK1356
Abstract: No abstract text available
Text: 2SK1356 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tzt-MOS INDUSTRIAL APPLICATIONS Unie in m m HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. £ 10.3UAJC. FEATURES: . High Breakdown Voltage : V( j r )d SS“900V
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2SK1356
Ta-25
VDS-900V,
VDS-25V,
OS-25V,
2SK1356
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Transistor BFR 96
Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
Text: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar
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fl235bD
QQQMb70
BFR34A
2N6620.
Q62702-F346-S1
Q68000-A4668
0Q0Mb73
Transistor BFR 96
2SC 930 AF
transistor 2Sc 2053
Transistor BFR34a
Transistor BFr 99
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marking UD
Abstract: 2SC4627
Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SC4627
100MHz
marking UD
2SC4627
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2SA1790
Abstract: 2SC4626
Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SA1790
2SC4626
2SA1790
2SC4626
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2SA1790
Abstract: 2SC4626
Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SA1790
2SC4626
2SA1790
2SC4626
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od300
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)
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2SC5289
SC-61
2SC5289-T1
od300
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A71B
Abstract: b1202 pt100 multiplexer RTD Embedded Technologies sandisk ultra ii SM3000
Text: Data Sheet SS/SM3000 Issue 18 Multipoint Videographic Recorder SM3000 Large clear display – 31 cm 12.1 in. thin film transistor (TFT) color screen Unsurpassed environmental protection – hosedown to IP66 and NEMA4X standards Multiple point recording – up to 36 universal analog inputs
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SS/SM3000
SM3000
10BaseT
A71B
b1202
pt100 multiplexer
RTD Embedded Technologies
sandisk ultra ii
SM3000
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SS8050
Abstract: transistor TO-92 SS8050
Text: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLA SS B PUSH-PULL OPERATION. TO -92 • Complimentary to SS8550 • Collector Current lc= 1-5A • Collector Dissipation Pc =2W Tc =25°C ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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SS8050
SS8550
SS8050
transistor TO-92 SS8050
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2N6849
Abstract: No abstract text available
Text: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-
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2N6849
MIL-S-19500/564
O-205AF
P-37010--Rev.
06/06M
2N6849
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2SC4655
Abstract: No abstract text available
Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment
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2SC4655
2SC4655
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rtd pt100 sensor thin film
Abstract: EM60068-2 abb sm2000 SIMPLE DOOR ALARM SYSTEM free Password based door locking system pt100 multiplexer sandisk ultra ii sandisk usb flash drive 16 gb sm2000 B12156
Text: Data Sheet SS/SM2000 Issue 20 Advanced Videographic Recorder SM2000 Bright and clear display – high contrast, thin film transistor TFT color screen Secure data recording – 8 Mb internal Flash memory for 12 recording channels and logs – no battery back-up required
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SS/SM2000
SM2000
rtd pt100 sensor thin film
EM60068-2
abb sm2000
SIMPLE DOOR ALARM SYSTEM free
Password based door locking system
pt100 multiplexer
sandisk ultra ii
sandisk usb flash drive 16 gb
sm2000
B12156
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2SC4655
Abstract: No abstract text available
Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment
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2SC4655
45MHz
2SC4655
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VNDQ09
Abstract: VQ1006 VQ1004
Text: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4
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VQ1004
VQ1006
14-PIN
VQ1006
VNDQ06
VNDQ09
VNDQ09
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2SA1790
Abstract: 2SC4626
Text: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SC4626
2SA1790
100MHz
2SA1790
2SC4626
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BUZ80AF
Abstract: BUZ80A BUZ80AFI
Text: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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BUZ80A
BUZ80AFI
BUZ80AFI
O-220
ISOWATT220
BUZ80A/BUZ80AFI
SCQ5970
BUZ80AF
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2SA1790
Abstract: 2SC4626
Text: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SC4626
2SA1790
2SA1790
2SC4626
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marking "BSs"
Abstract: No abstract text available
Text: BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type BSS 110 BSS 110 BSS 110 Ordering Code
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Q62702-S500
Q62702-S278
Q67000-S568
E6288
E6296
E6325
marking "BSs"
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Untitled
Abstract: No abstract text available
Text: STP16N10L N - CHANNEL 100V - 0.14 i l - 16A - TO-220 POWER MOS TRANSISTOR TYPE V S TP16N 10L . . . . . . . . R d ss 100 V d Id S o ii < 0 .1 6 a 16 A TYPICAL RDS(on) = 0.14 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STP16N10L
O-220
TP16N
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Untitled
Abstract: No abstract text available
Text: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE
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IRFK6H450
SCM720
O-240)
PC-029«
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Untitled
Abstract: No abstract text available
Text: ¿7/ STB30N10 N - CHANNEL 100V - 0.06Î2 - 30A - D2PAK POWER MOS TRANSISTOR TYPE V STB30N10 d ss 100 V R d S o ii < 0 .0 7 a Id 30 A TYPICAL R D S (on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE
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STB30N10
O-263)
O-263
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Untitled
Abstract: No abstract text available
Text: 45E J> m TGTVESQ IT0S4 0017fl3D 2 2SJ115 "T-sq-z-i> TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AU DI O FREQUENCY POWER AM PL IF IE R APPLICATION. 0 3 .2 t a g 1S9MAX. FEATURES: . High Breakdown Voltage : V[)SS = ~160V
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0017fl3D
2SJ115
2SK405
10-CL25
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Untitled
Abstract: No abstract text available
Text: SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level *^GS .h = 0.8.2.0V Type ^DS BSS 295 50 V Type BSS 295 BSS 295 Ordering Code Q67000-S238 Q67000-S105 1.4 A f fDS(on) Package Marking 0.3 Q TO-92 SS 295 Tape and Reel Information
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Q67000-S238
Q67000-S105
E6288
E6325
S35bG5
Q133777
SQT-89
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transistor l1w
Abstract: s217 diode
Text: BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 296 100 V 0.8 A 0.8 Ω TO-92 SS 296 Type BSS 296 Ordering Code Q62702-S217
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Q62702-S217
E6296
transistor l1w
s217 diode
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