TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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SS9012
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity.
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SS9012
625mW)
-500mA)
SS9013
SS9012
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Untitled
Abstract: No abstract text available
Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.
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SS9013
625mW)
500mA)
SS9012
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SS9012
Abstract: SS9013 PT-625mW
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excelent hFE linearity.
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SS9012
625mW)
-500mA)
SS9013
-50mA
-500mA
-500mA,
SS9012
SS9013
PT-625mW
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SS9013
Abstract: SS9012 transistor SS9013
Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. PT=625mW • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excelent hFE linearity.
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SS9013
625mW)
500mA)
SS9012
500mA
500mA,
SS9013
SS9012
transistor SS9013
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transistor cross reference
Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER
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OT-23
S9011
S9012
S9013
S9014
S9015
S9016
S9018
S8050
S8550
transistor cross reference
transistor c1008
npn transistor c1008
NPN C1008
s8550 npn
SS8550 cross reference
S9014 cross reference
c1008 transistor
s9014 equivalent
S8050 equivalent
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transistor 2N5952
Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also
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Transistor 9012
Abstract: H9012 8550S SS9012
Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A047BJ-00 芯片厚度:240±20µm 管芯尺寸:470x470µm 2 焊位尺寸:B 极 103×103µm2,E 极 98×98µm2
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100mm
A047BJ-00
SS9012H90128550S
625mW
-700mA
-25VIE
-50mA
-500mA
Transistor 9012
H9012
8550S
SS9012
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Transistor 9012
Abstract: H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V
Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A043BJ-00 芯片厚度:240±20µm 管芯尺寸:430x430µm 2 焊位尺寸:B 极 107×107µm2,E 极 101×101µm2
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100mm
A043BJ-00
SS9012H90128550S
625mW
-500mA
-25VIE
-50mA
Transistor 9012
H9012 equivalent
a043
8550S
H9012
SS9012
A043BJ-00
VCEO-20V
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s9013
Abstract: transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 SS9013FBU S9013 TO92 SS9013 SS9013-HBU S9013 to-92
Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9013
625mW)
500mA)
SS9012
SS9013
O-92-3
SS9013FBU
SS9013FTA
SS9013FTF
s9013
transistor TO-92 S9013
transistor s9013
s9013 transistor
transistor S9013 to92
S9013 TO92
SS9013-HBU
S9013 to-92
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SS9012
Abstract: transistor SS9012 SS9012 APPLICATIONS
Text: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9012
625mW)
-500mA)
SS9013
SS9012
O-92-3
transistor SS9012
SS9012 APPLICATIONS
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transistor SS9013
Abstract: ss9012 cross
Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9013
625mW)
500mA)
SS9012
SS9013
O-92-3
transistor SS9013
ss9012 cross
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SS9012
Abstract: SS9013
Text: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9012
625mW)
-500mA)
SS9013
SS9012
SS9013
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SS9012
Abstract: SS9013
Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • • High total power dissipation. PT=625mW • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9013
625mW)
500mA)
SS9012
SS9012
SS9013
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Untitled
Abstract: No abstract text available
Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9013
625mW)
500mA)
SS9012
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SS9012
Abstract: SS9013
Text: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9012
625mW)
-500mA)
SS9013
SS9012
SS9013
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Untitled
Abstract: No abstract text available
Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. PT=625mW High Collector Current. (lc =500mA) Complementary to SS9012 Excellent hFE linearity.
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SS9013
625mW)
500mA)
SS9012
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PDF
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Untitled
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. PT=625mW High Collector Current. (Ic = -500mA) Complementary to SS9013 Excellent lvE linearity.
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SS9012
625mW)
-500mA)
SS9013
ibm42
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Untitled
Abstract: No abstract text available
Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • High total power dissipation. {Pt“ 625mW • High Collector Current. lc“ 500mA) • Complementary to SS9012 • Excelent hFE linearity.
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SS9013
625mW)
500mA)
SS9012
500mA
500mA,
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Untitled
Abstract: No abstract text available
Text: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. P t = 6 2 5 itiW High Collector Current. (lc=500mA) Complementary to SS9012 Excellent hFE linearity.
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SS9013
500mA)
SS9012
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Untitled
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.
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SS9012
625mW
-500m
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Untitled
Abstract: No abstract text available
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P t = 6 2 5 itiW High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hFE linearity.
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SS9012
-500mA)
S9013
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SS9012
Abstract: SS9013
Text: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (Ic= -500mA) C om plem entary to S S9013 Excellent hpE linearity.
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SS9012
625mW)
-500mA)
SS9013
-100nA,
g-500
SS9012
SS9013
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2ss9014
Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013
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71b4142
SS9012
825mW)
-500mA)
SS9013
Breakdo4142
SS9014
fe-14
1-10C
2ss9014
ss8015
A 671 transistor
SS9013
U007
transistor ss9014
T-31-21
50nr
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