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    TRANSISTOR ST 2N2907 Search Results

    TRANSISTOR ST 2N2907 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ST 2N2907 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2222A TO-92

    Abstract: 2N2222A plastic 2N2222A plastic package 2n2222 st 2n2222a 2N2222A ST 2n2222 datasheet ST 2n2222 Transistor 2N2222A 2N2222A st
    Text: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.


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    PDF 2N2222 2N2222A 2N2907 2N2907A 2N2222A TO-92 2N2222A plastic 2N2222A plastic package st 2n2222a 2N2222A ST 2n2222 datasheet ST 2n2222 Transistor 2N2222A 2N2222A st

    2n2222

    Abstract: pin configuration transistor 2N2222 Transistor 2N2222 NPN TO92 2N2222 hfe 2N2222 NPN Transistor to 92 OF transistor 2N2222 "PNP Transistor" 2n2222 OF transistor 2N2222 to-92 Datasheet 2N2222 transistor 2N2222 transistor
    Text: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.


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    PDF 2N2222 2N2222A 2N2907 2N2907A pin configuration transistor 2N2222 Transistor 2N2222 NPN TO92 2N2222 hfe 2N2222 NPN Transistor to 92 OF transistor 2N2222 "PNP Transistor" 2n2222 OF transistor 2N2222 to-92 Datasheet 2N2222 transistor 2N2222 transistor

    2n2222

    Abstract: 2N2222A plastic package 2N2222A plastic 2N2222 hfe 2n2907 to92 2N2222A TO-92 OF transistor 2N2222 to-92 2n2222 to92 2N2222 NPN Transistor to 92 "PNP Transistor" 2n2222
    Text: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.


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    PDF 2N2222 2N2222A 2N2907 2N2907A 2N2222A plastic package 2N2222A plastic 2N2222 hfe 2n2907 to92 2N2222A TO-92 OF transistor 2N2222 to-92 2n2222 to92 2N2222 NPN Transistor to 92 "PNP Transistor" 2n2222

    2N2907 PNP Transistor to 92

    Abstract: 2N2907 plastic 2N2907 2N2907A 2N2907 NPN Transistor 2N2907A plastic 2N2907 plastic package ST TRANSISTOR 2N2907 2N2907 TRANSISTOR 2n2907 to92
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.


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    PDF 2N2907 2N2907A 2N2222 2N2222A 150at 2N2907 PNP Transistor to 92 2N2907 plastic 2N2907A 2N2907 NPN Transistor 2N2907A plastic 2N2907 plastic package ST TRANSISTOR 2N2907 2N2907 TRANSISTOR 2n2907 to92

    2n2222

    Abstract: 2N2222A plastic package 2N2222A plastic 2N2222A 2N2222A TO-92 ST 2n2222 datasheet st 2n2222a ST 2n2222 2n2222 TRANSISTOR Transistor 2N2222 Datasheet
    Text: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.


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    PDF 2N2222 2N2222A 2N2907 2N2907A 2N2222A plastic package 2N2222A plastic 2N2222A 2N2222A TO-92 ST 2n2222 datasheet st 2n2222a ST 2n2222 2n2222 TRANSISTOR Transistor 2N2222 Datasheet

    2N2222A plastic package

    Abstract: 2N2222A plastic 2n2222 st 2n2222a 2N2222A ST 2n2222 NPN transistor 2n2222A plastic package 2n2222 to92 OF transistor 2N2222 OF transistor 2N2222 to-92
    Text: ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.


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    PDF 2N2222 2N2222A 2N2907 2N2907A 2N2222A plastic package 2N2222A plastic st 2n2222a 2N2222A ST 2n2222 NPN transistor 2n2222A plastic package 2n2222 to92 OF transistor 2N2222 OF transistor 2N2222 to-92

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    PDF 2N2907 2N2907A 150mA, 500mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222

    2907 TRANSISTOR PNP

    Abstract: 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    PDF 2N2907 2N2907A 150mA, 500mA, 100MHz 2907 TRANSISTOR PNP 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222

    2N2907 PNP Transistor to 92

    Abstract: 2N2907A plastic 2N2907 NPN Transistor 2n2907 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.


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    PDF 2N2907 2N2907A 2N2222 2N2222A 2N2907 PNP Transistor to 92 2N2907A plastic 2N2907 NPN Transistor 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor

    2N2222 - to-92

    Abstract: 2N2222A TO-92 2N2222A plastic package transistor 2n2222a to-92 2N2222 NPN Transistor to 92 2N2222 2N2222 transistor 2n2222a to 92 transistor 2n2222 Transistor 2N2222A-TO92
    Text: 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended.


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    PDF 2N2222 2N2222A 2N2907 2N2907A 500mA 150mA 2N2222 - to-92 2N2222A TO-92 2N2222A plastic package transistor 2n2222a to-92 2N2222 NPN Transistor to 92 2N2222 transistor 2n2222a to 92 transistor 2n2222 Transistor 2N2222A-TO92

    2907 TRANSISTOR PNP

    Abstract: 2907a TRANSISTOR PNP 2907a
    Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.


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    PDF 2N2907 2N2907A 500mA, 150mA, 100MHz 2907 TRANSISTOR PNP 2907a TRANSISTOR PNP 2907a

    2N2907ADIE

    Abstract: MICROSEMI 2N2907A ST 2n2907a die 2N2907A 10VDC MSC0948
    Text: 2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS


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    PDF 2N2907ADIE MIL-PRF-19500/291 10Vdc, 100kHz< 2N2907ADIE MICROSEMI 2N2907A ST 2n2907a die 2N2907A 10VDC MSC0948

    MIL-S-19500/291

    Abstract: 2N2907A
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2907A Features • • • • 60 Volts 0.6 Amps Meets MIL-S-19500/291 Collector-Base Voltage 60V Collector Current: 600 mAdc Fast Switching 345 nS PNP BIPOLAR TRANSISTOR Maximum Ratings


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    PDF 2N2907A MIL-S-19500/291 MSC0276A MIL-S-19500/291 2N2907A

    SOC2907A

    Abstract: 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A 2N2907AHR
    Text: 2N2907AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range 3 1 1 2 2 3 -65°C to +200°C TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


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    PDF 2N2907AHR 2N2907AHR SOC2907A 520200104 ESCC 5202-001 soc2907 520200105 SOC2907AHRB MARKING SMD PNP TRANSISTOR R 5202001 SOC-2907A

    2N2907AUB

    Abstract: optoelectronic ic "PNP Transistor"
    Text: 61089 Features: Applications: • • • • • • • • • Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUB) Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged


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    PDF 2N2907AUB) OT-23 MIL-PRF-19500 2N2907AUB optoelectronic ic "PNP Transistor"

    transistor 45 f 122

    Abstract: 2N2907AUA "PNP Transistor" 60v small signal transistor surface mount transistor 8
    Text: 61083 Mii SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (2N2907AUA) Features: Applications: • • • • • • • • Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package MIL-PRF-19500 screening available


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    PDF 2N2907AUA) MIL-PRF-19500 MIL-PRF-19500. 2N2907AUA, transistor 45 f 122 2N2907AUA "PNP Transistor" 60v small signal transistor surface mount transistor 8

    Signal Conditioning Amplifiers

    Abstract: Transistor 2N2907A 2N2907A
    Text: 61095 GENERAL PURPOSE PNP TRANSISTOR 2N2907A Features: Applications: • • • • • • • • TO-18 style package Rugged package – able to withstand high acceleration load Hermetically sealed Mil-S-19500 screening available Mii OPTOELECTRONIC PRODUCTS


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    PDF 2N2907A) Mil-S-19500 2N2907A 100kHz 100kHz, 150mA, Signal Conditioning Amplifiers Transistor 2N2907A

    2N2907AUB

    Abstract: No abstract text available
    Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


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    PDF 2N2907AHR 2N2907AHR MIL-PRF19500 2N2907AUB

    J2N2907A

    Abstract: JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb
    Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


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    PDF 2N2907AHR 2N2907AHR MIL-PRF19500 J2N2907A JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb

    Untitled

    Abstract: No abstract text available
    Text: 61083 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 0.225 5.72 0.215 (5.46) Features • • • • jns*- Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available


    OCR Scan
    PDF 2N2907AUA Mil-S-19500 2N2907AUA 14ERISTICS VCE-10V, E-20V, lc-50mA, f-100kHz 100kHz 100kHz

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • m t- 2N2907A GENERAL PURPOSE PNP TRANSISTOR 61095 OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Oia. 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed


    OCR Scan
    PDF 2N2907A Mil-S-19500 2N2907A lc-50mA, f-100kHz 100kHz 150mA, lc-150mA, 300ns,

    Untitled

    Abstract: No abstract text available
    Text: MS- 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61083 OPTOELECTRONIC PRODUCTS DIVISION Features — Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available PIN 1 IDENTIFIER


    OCR Scan
    PDF 2N2907AUA Mil-S-19500 2N2907AUA lc-50mA, 100kHz lc-150mA, lBl-15mA VCE-10V, 150mA,

    Untitled

    Abstract: No abstract text available
    Text: 61095 Features • • • • jn a- 2N2907A GENERAL PURPOSE PNP TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Dia 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed


    OCR Scan
    PDF 2N2907A Mil-S-19500 2N2907A lc-50mA, f-100kHz 100kHz lc-150mA, 300ns,

    2N2907AUB

    Abstract: No abstract text available
    Text: jim»- 2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61089 Features OPTOELECTRONIC PRODUCTS DIVISION ORIENTATION KEY Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 packaged


    OCR Scan
    PDF 2N2907AUB OT-23 MIL-S-19500 500mA, VCE-10V, ic-50mA, 100kHz