TRANSISTOR SU 110 Search Results

TRANSISTOR SU 110 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR SU 110 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: S AM SU N G SEMICONDUCTOR INC BCW32 1ME D 7^4145 000?a0b \| NPN EPITAXIAL SILICON TRANSISTOR .T-23- I e! GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	BCW32 T-23- MMBT5088	PDF
CT 1975 sam Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the	OCR Scan	2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking	PDF
ST T8 3580 Abstract: ST T8 3560 2SC5436 st zo 607 ce 2826 ic Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR ULTRA SU PER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: T Y P.)	OCR Scan	2SC5186 ST T8 3580 ST T8 3560 2SC5436 st zo 607 ce 2826 ic	PDF
Untitled Abstract: No abstract text available Text: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	MPSA63 625mW MPSA62	PDF
3 pin mini mold transistor Abstract: R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2sc4226 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor Text: DATA SHEET - SILICON TRANSISTOR 2SC4226 H IG H FREQ UENC Y LOW NO ISE A M P L IF IE R NPN SILICO N EPITAXIAL TR A N S IS T O R SU PE R M INI M O LD DESCRIPTION	OCR Scan	2SC4226 2SC4226 SC-70 3 pin mini mold transistor R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor	PDF
A12004 Abstract: BA12003 BA12002 BA12004 Text: BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 High-Voltage, High-Current Darlington Transistor Arrays The B A 1 2001 / B A 1 2 0 0 2 / B A 1 2 0 0 3 / B A 1 2004 are high- voltage, large-current transistor arrays that utilize D arlington transistors. Built-in su rg e a b so rb in g diode,	OCR Scan	BA12001 /BA12002/BA12003/BA12004 BA12001/BA12002 BA12003/BA12004 500mA) BA12002) BA12003) A12004 BA12003 BA12002 BA12004	PDF
RO SOT23-5 Abstract: No abstract text available Text: ADVANCE INFORMATION A1/XIA1 All Inform ation in this d a ta sheet is prelim inary a nd su b je c t to change. a/97 Low-Noise9 Low-Dropout, 150mA Linear Regulators in SOT-23 T he M A X 8 8 6 7 /M A X 8 8 6 8 u se an in te rn a l P -ch a n n e l MOSFET pass transistor, w hich keeps the su p p ly cu r	OCR Scan	100mA 165mV 150mA MAX8863/MAX8864 OT-23 8867/M 150mA. OT23-5 OT23-5 RO SOT23-5	PDF
transistor NEC D 882 p Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain	OCR Scan	2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P	PDF
TF012 Abstract: No abstract text available Text: • Features ■ ft» MOR CHIP PHOTO-TRANSISTOR 1. Developed a s a chip type SM D phot-transistor for both reverse and top su rface mounting U T m m m e iM » 2. 51-ff^aiá3.e L X 1.6(W)X 1.1(H) 2. Sm all and square size , dim ensions : 3 .2 (L )x 1.6(W)X1.1 (H)mm	OCR Scan	51-ff 14/Characteristics 2001R TF012	PDF
169800 Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)	OCR Scan	NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 169800 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb	PDF
MPS2907A EQUIVALENT Abstract: No abstract text available Text: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A \| T^IMS 0007311 6 \| PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	MPS2907A T-29-21 PS2907 MPS2907A EQUIVALENT	PDF
DDS-60 Abstract: NCQ1004 RL 50B Text: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD	OCR Scan	NCQ1004 100UC DDS-60 NCQ1004 RL 50B	PDF
IRFP140 Abstract: Relays 12v 31A TA17421 TB334 Text: IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU R 0N Data January 2002 T NO IBLE IRFP14 S S PO 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,	Original	IRFP14 TA17421. IRFP140 Relays 12v 31A TA17421 TB334	PDF
2N558B Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002 Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors TypNo. VCEO (•!) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265	OCR Scan	0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002	PDF

2N7073 Abstract: No abstract text available Text: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated	OCR Scan	flfi5473S 2N7073 O-254AA	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BF 775A NPN Silicon RF Transistor P relim inary Data F eature • E sp ecially su itable for a m plifiers in T V -sa t tuners E S D : E le ctro static d isch a rg e sensitive device, ob se rve handling precautions! T yp e BF 775 A O rd e rin g C ode	OCR Scan		PDF
MRF9331 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.	OCR Scan		PDF
BCV63 Abstract: BCV64 small signal transistor SCHMITT-TRIGGER application BCV64A 700 v power transistor Text: ^53^31 D E V E L O P M E N T D ATA DOlSbll 5 BCV64 T h is d a ta sheet c o n ta in s advance in fo rm a tio n a n d sp e c ific a tio n s are su b ject to c hange w it h o u t notice. N AMER PH IL IP S/ DISCR ETE ObE D SILICO N PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications.	OCR Scan	BCV64 OT-143 BCV63. 0015L13 BCV63 BCV64 small signal transistor SCHMITT-TRIGGER application BCV64A 700 v power transistor	PDF
C4171 Abstract: MCI455 MJ6308 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 2N6308 AM503 MJ16006 MTP8P10 Text: M OTO RO LA SC XSTRS/R F MOTOROLA 1EE D SEM IC O N D U C T O R TECHNICAL DATA I Order this data sheet by MJ6308/D b3b?254 QOflSbSb Designer's Data Sheet S w itc h m o d e N P N Bipolar Pow er Transistor For S w itch in g Pow er Su p p ly A p p lication s	OCR Scan	MJ6308/D MJ6308 2N6308 2N6308 MJ6308 C4171 MCI455 2n6308 TRANSISTOR REPLACEMENT two transistor flyback MJE16106 AM503 MJ16006 MTP8P10	PDF
so C T Q 150 Abstract: 2N7077 JIS D 4215 Text: c r S ic a n ix 2N7077 J U r in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 400 r,w (A) 0.30 15 •d 1 DRAIN 2 SO U RCE 3 GATE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)	OCR Scan	2N7077 O-254AA so C T Q 150 2N7077 JIS D 4215	PDF
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2	OCR Scan	2N3848 2N3S49 2N4002 2N4003 2N4210 2N4211 2N5539	PDF
c2785 Abstract: 2SK193 transistor 2sk193 2SA1174 2SB811 C 2785 2SD1020 2SD1021 2SC2785 M 2sc2785 Text: NEC e le c tro n device S S T DESCRIPTION M 0 L Q TRANSISTOR SERIES T h e SST Sm all Size T ra n s fe r M O L D T R A N S IS T O R PACKAGE DIMENSIONS S E R IE S are designed fo r h ig h d e n s ity assem bly o f e q u ip in m illim e te rs m e n t, and these are ve ry su ita b le fo r m in im iz in g and	OCR Scan	2SK193 2SB811 c2785 transistor 2sk193 2SA1174 2SB811 C 2785 2SD1020 2SD1021 2SC2785 M 2sc2785	PDF
transistor tt 2222 Abstract: transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2 Text: N AMER P H I L I P S / D I S C R E T E bTE D • bbSS'ISl D O S A G E A 2 flfc> W A P X BLY89C V.H.F. POWER TRANSISTOR N-P-N s ilic o n planar e p ita xia l tra n sisto r intended fo r use in class-A, B and C operated m obile, in d u stria l and m ilita ry tra n sm itte rs w ith a n om inal su p p ly voltage o f 13,5 V . T he tra n sisto r is resistance stabilized	OCR Scan	BLY89C transistor tt 2222 transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR M ODULES QM50DY-24B M EDIUM POWER SWITCHING USE j INSULATED TYPE f QM50DY-24B APPLICATION Inverters, Servo drives, UPS, DC m otor controllers, NC equipm ent, W elders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm \ T ! 1 Tab#110. t= 0 5	OCR Scan	QM50DY-24B	PDF

TRANSISTOR SU 110 Search Results

TRANSISTOR SU 110 Result Highlights (5)

TRANSISTOR SU 110 Datasheets Context Search

Untitled

CT 1975 sam

ST T8 3580

Untitled

3 pin mini mold transistor

A12004

RO SOT23-5

transistor NEC D 882 p

TF012

169800

MPS2907A EQUIVALENT

DDS-60

IRFP140

2N558B

2N7073

Untitled

MRF9331

BCV63

C4171

so C T Q 150

Untitled

c2785

transistor tt 2222

Untitled