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    TRANSISTOR SUBSTITUTION Search Results

    TRANSISTOR SUBSTITUTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SUBSTITUTION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


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    PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    IPC-600E

    Abstract: nj TRANSISTOR 610B ASTM-B16-85 TRANSISTOR SUBSTITUTION HASL surface mount to dip adapter
    Text: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT-23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder


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    PDF OT-25, OT-23A-6 OT-23A-6 OT-25 IPC-600E, IPC-600E nj TRANSISTOR 610B ASTM-B16-85 TRANSISTOR SUBSTITUTION HASL surface mount to dip adapter

    Untitled

    Abstract: No abstract text available
    Text: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT-23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder


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    PDF OT-25, OT-23A-6 OT-23A-6 OT-25 IPC-600E,

    Untitled

    Abstract: No abstract text available
    Text: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder


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    PDF OT-25, OT-23A-6 OT23A-6 OT-25 IPC600E,

    IPC-600E

    Abstract: No abstract text available
    Text: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT-23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder


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    PDF OT-25, OT-23A-6 OT-23A-6 OT-25 IPC-600E, IPC-600E

    microgate

    Abstract: No abstract text available
    Text: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT-23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder


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    PDF OT-25, OT-23A-6 OT-23A-6 OT-25 IPC-600E, microgate

    Untitled

    Abstract: No abstract text available
    Text: Part No. 1110748 - Surface Mount to DIP Adapter for SOT-25, SOT-23A-6 FEATURES: • Allows for breadboarding or substitution of microgate SOT23A-6 and SOT-25 IC and transistor packages into .100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder


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    PDF OT-25, OT-23A-6 OT23A-6 OT-25 IPC600E,

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    18043

    Abstract: IPC600E
    Text: P/N 1110748 Surface Mount-to-DIP JEDEC SOT-25, SOT-23A-6 Adapter FEATURES • Allows for breadboarding or substitution of Microgate SOT-23A-6 and SOT-25 IC and transistor packages into 0.100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder devices directly to topside of


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    PDF OT-25, OT-23A-6 OT-25 IPC-600E, C36000, B16/B16M -610B 1110748-P 18043 IPC600E

    IPC-600E

    Abstract: TRANSISTOR SUBSTITUTION
    Text: P/N 1110748 Surface Mount-to-DIP JEDEC SOT-25, SOT-23A-6 Adapter FEATURES • Allows for breadboarding or substitution of Microgate SOT-23A-6 and SOT-25 IC and transistor packages into 0.100 [2.54] pitch proto boards or PC boards. • Solder masked top-side pads allow user to hand solder devices directly to topside of


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    PDF OT-25, OT-23A-6 OT-25 IPC-600E, C36000, 1110748-P -610B IPC-600E TRANSISTOR SUBSTITUTION

    2N7594

    Abstract: 2N7588T3 2N7590T3 2n7588 IRHYS67230CM IRHYS67130CM 2N759
    Text: INCH-POUND MIL-PRF-19500/755 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF


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    PDF MIL-PRF-19500/755 2N7588T3, 2N7590T3, 2N7592T3 2N7594T3, MIL-PRF-19500. 2N7588T3 IRHYS67130CM 2N7590T3 IRHYS67133CM 2N7594 2N7588T3 2N7590T3 2n7588 IRHYS67230CM IRHYS67130CM 2N759

    2N7518

    Abstract: F 739 DC 2N6989U IRHQ567110 MO-036AB
    Text: INCH-POUND MIL-PRF-19500/739 24 January 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F


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    PDF MIL-PRF-19500/739 2N7518 2N7518U, MIL-PRF-19500. 2N7518U 2N7518 IRHQ567110 IRHG567110 MIL-PRF-19500/741. F 739 DC 2N6989U IRHQ567110 MO-036AB

    TRANSISTOR SUBSTITUTION

    Abstract: tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010 CRF-22010-TB RO4003
    Text: CRF-22010-TB Evaluation Board for CRF-22010 Version A Narrowband Features • • • • • • Ready-to-Go RF Amplifier Requires Two Power Supplies Externally Adjustable Gate Bias Voltage Solderless Transistor Changeout Includes Heat Sink, Fan, and Wiring Harness


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    PDF CRF-22010-TB CRF-22010 CRF-22010-TB-A CRF-22010 TRANSISTOR SUBSTITUTION tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010-TB RO4003

    2N43a

    Abstract: 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 1999. INCH-POUND MIL-PRF-19500/6C 1 March 1999 SUPERSEDING MIL-S-19500/6B 28 December 1971 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,


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    PDF MIL-PRF-19500/6C MIL-S-19500/6B 2N43AZ1, 2N43AZ2, 2N44AZ1 2N44AZ2 MIL-PRF-19500. 2N43a 2N43A DATASHEET 2N44A 2N43A equivalent 2n44a jan

    2N3743

    Abstract: 2N4930 2N4931 397G
    Text: INCH-POUND MIL-PRF-19500/397G 1 April 2002 SUPERSEDING MIL-PRF-19500/397F 21 April 2000 The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 July 2002. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON


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    PDF MIL-PRF-19500/397G MIL-PRF-19500/397F 2N3743, 2N4930, 2N4931 MIL-PRF-19500. 2N3743 2N4930 2N4931 397G

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    2N6137

    Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
    Text: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV


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    PDF MIL-S-19500/493A MIL-S-19500/493 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, MIL-S-19500. T0-18) 2N6137 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX