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    TRANSISTOR T 04 59 Search Results

    TRANSISTOR T 04 59 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T 04 59 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3PN06L04

    Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02219 3PN06L04 3PN06L04 SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 PDF

    SLo 380 R

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC618 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor BC618 FEATURES


    OCR Scan     		BC618 115002/00/03/pp8 SLo 380 R PDF

    GMA14

    Abstract: GMA64
    Text: ISSUED DATE :2005/04/04 REVISED DATE : G M A6 4 P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain. Features High DC current gain


    Original     		GMA64 GMA14 OT-89 GMA64 GMA14 PDF

    bvc62

    Abstract: STR 734
    Text: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BLV859 SC08a OT262B SCA51 127041/1200/02/pp16 bvc62 STR 734 PDF

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA


    OCR Scan     		MMFT108T1/D OT-223 MMFT108T1 318E-04, O--261AA) 1-80CM41-2447 sot-223 body marking D K Q F PDF

    G8050S

    Abstract: G8550S
    Text: CORPORATION G8050S ISSUED DATE :2004/04/22 REVISED DATE :2004/11/29B N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio


    Original     		G8050S 2004/11/29B G8050S 700mA G8550S G8550S PDF

    GMA14

    Abstract: No abstract text available
    Text: ISSUED DATE :2001/10/04 REVISED DATE :2006/05/10C G M A1 4 NP N E PITAX I AL PLANAR T RANSI STOR Description The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-89 Millimeter


    Original     		2006/05/10C GMA14 OT-89 GMA14 PDF

    CA3095E

    Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
    Text: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp


    OCR Scan     		CA3095E 16-Lead 3095E 27--Bias CA3095E 28--Super-beta 30-High-input-im Fia32 34--CA309SE CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array PDF

    SMD TRANSISTOR MARKING P28

    Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
    Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes


    OCR Scan     		5962-R053-94. SMD TRANSISTOR MARKING P28 SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf PDF

    TRANSISTOR marking 489 code

    Abstract: No abstract text available
    Text: DTA143EE DTA143EUA DTA143EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA143EE, DTA143EUA, and DTA143EKA; 13 a built-in bias resistor allows inverter


    OCR Scan     		DTA143EE DTA143EUA DTA143EKA SC-70) SC-59) DTA143EE, DTA143EUA, DTA143EKA; DTA143EE DTA143EUA TRANSISTOR marking 489 code PDF

    62003F

    Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
    Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F


    OCR Scan     		40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852 PDF

    Untitled

    Abstract: No abstract text available
    Text: h 7 > V * * /Transistors UMZ2N IMZ2A UMZ2N/IMZ2A Isolated Mini-Mold Device /General Small Signal Amp. • ft« • ^ • \f'jil2 /D im e n s io n s U n it: mm 1) UM T (SC-70), SM T (SC-59) ¿ i l - 2« 0 b ÿ > ' J X 9 1 f A -o X I'Z o 2) UM T, SM T « * iw r i7 * s .


    OCR Scan     		SC-70) SC-59) PDF

    Untitled

    Abstract: No abstract text available
    Text: DTC114TE DTC114TUA DTC114TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTC114TE, DTC114TUA, and DTC114TKA; 04 a built-in bias resistor allows inverter


    OCR Scan     		DTC114TE DTC114TUA DTC114TKA SC-70) SC-59) DTC114TE, DTC114TUA, DTC114TKA; DTC114TE h-44-! PDF

    TD62597A

    Abstract: No abstract text available
    Text: SILICON M O N O L IT H IC BIPO LAR D IG IT A L IN T EG R A T ED CIRCUIT - TD62593AFNJD62594AFN TD62597AFNJD62598AFN 8ch SINGLE DRIVER : C O M M O N EMITTER Th e TD 62 593, 4, 7, 8 A F N are co m prise d o f e ig h t N PN


    OCR Scan     		TD62593AFNJD62594AFN TD62597AFNJD62598AFN 50/is, TD62593AFN, TD62597AFN TD62594AFN 62598AFN TD62593AFN TD62597A PDF

    TRANSISTOR CATALOGUE

    Abstract: "MARKING CODE S4" BC548 MGD415
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X


    Original     		BFG11W/X OT343 SCA49 127101/1200/02/pp12 TRANSISTOR CATALOGUE "MARKING CODE S4" BC548 MGD415 PDF

    smd transistor marking n3

    Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
    Text: DISCRETE SEMICONDUCTORS 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J


    OCR Scan     		2PC4617J 2PC4617J SC-89 OT490) SCA63 5002/00/02/pp8 smd transistor marking n3 MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J


    OCR Scan     		2PA1774J 2PA1774J SC-89 SCA63 5002/00/02/pp8 PDF

    JA101P

    Abstract: ja 101q
    Text: DISCRETE SEMICONDUCTORS JA101 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 04 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor


    OCR Scan     		JA101 JA101 JC501. 115104/00/03/pp8 JA101P ja 101q PDF

    2.45V PRECISION REFERENCE REGULATOR

    Abstract: GQ2141
    Text: ISSUED DATE :2006/04/04 REVISED DATE : GQ2141 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2141 of positive, linear regulator feature low quiescent current 50 A typ. with low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications.


    Original     		GQ2141 GQ2141 150mA 2.45V PRECISION REFERENCE REGULATOR PDF

    TRANSISTOR SMD MARKING CODE 9A

    Abstract: smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A


    Original     		M3D088 PMMT491A PMMT591A. PMMT491A TRANSISTOR SMD MARKING CODE 9A smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic PDF

    TD62592AP

    Abstract: No abstract text available
    Text: T O SH IB A TD62591 ~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight


    OCR Scan     		TD62591 594AP 598AP/AF TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62592AP PDF

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


    Original     		HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 PDF

    ELI-1

    Abstract: TD62591 TD62591AP TD62592AP TD62593AP TD62594AP TD62595AF TD62595AP TD62596AF TD62596AP
    Text: TOSHIBA TD62591 ~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight


    OCR Scan     		TD62591 594AP 598AP/AF TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, ELI-1 TD62591 TD62591AP TD62592AP TD62593AP TD62595AF TD62595AP TD62596AF TD62596AP PDF

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


    Original     		HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w PDF