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    TRANSISTOR T 04 SOT23 Search Results

    TRANSISTOR T 04 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T 04 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSS84 P

    Abstract: BSS84 GSOT-23
    Text: BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical D-MOS transistor in a SOT23 Surface-Mount Device SMD package. 1.2 Features


    Original     		BSS84 BSS84 P BSS84 GSOT-23 PDF

    PBSS5140T

    Abstract: TRANSISTOR SMD MARKING CODES PBSS4140T NXP TRANSISTOR SMD MARKING CODE SOT23
    Text: PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS5140T O-236AB) PBSS4140T. PBSS5140T TRANSISTOR SMD MARKING CODES PBSS4140T NXP TRANSISTOR SMD MARKING CODE SOT23 PDF

    SMD transistor MARKING CODE 312

    Abstract: SOT23-4 MARKING U6 PBSS5160T BCP52 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160
    Text: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS5160T O-236AB) PBSS4160T. BCP52 BCX52 PBSS5160T SMD transistor MARKING CODE 312 SOT23-4 MARKING U6 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160 PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS5160T O-236AB) PBSS4160T. BCP52 BCX52 PBSS5160T PDF

    2n3904 sot23

    Abstract: 2n3906 sot23 2N3904 2N3906 EMC1201 EMC1201-AGZQ-TR EMC1202 EMC1202-AGZQ-TR KBC1100 MO-178
    Text: EMC1201/EMC1202 Single/Dual Single-Wire Temp Sensor in SOT23-5 Using SMSC BudgetBusTMSensor Interface PRODUCT FEATURES Datasheet General Description Features The EMC1201 and EMC1202 are temperature sensors that communicate with a host over a single-wire SMSC


    Original     		EMC1201/EMC1202 OT23-5 EMC1201 EMC1202 OT23-5, EMC1201 batter788 MO-178 2n3904 sot23 2n3906 sot23 2N3904 2N3906 EMC1201-AGZQ-TR EMC1202-AGZQ-TR KBC1100 PDF

    2n3906 sot23

    Abstract: 2N3904 2N3906 EMC1201 EMC1201-AGZQ-TR EMC1202 EMC1202-AGZQ-TR KBC1100 MO-178
    Text: EMC1201/EMC1202 Single/Dual Single-Wire Temp Sensor in SOT23-5 Using SMSC BudgetBusTMSensor Interface PRODUCT FEATURES Datasheet General Description Features The EMC1201 and EMC1202 are temperature sensors that communicate with a host over a single-wire SMSC


    Original     		EMC1201/EMC1202 OT23-5 EMC1201 EMC1202 OT23-5, EMC1201 batt88 MO-178 2n3906 sot23 2N3904 2N3906 EMC1201-AGZQ-TR EMC1202-AGZQ-TR KBC1100 PDF

    sot29x16

    Abstract: Multiplexer Switches
    Text: EMC1201/EMC1202 Single/Dual Single-Wire Temp Sensor in SOT23-5 Using SMSC BudgetBusTMSensor Interface Datasheet General Description Features The EMC1201 and EMC1202 are temperature sensors that communicate with a host over a single-wire SMSC BudgetBus Sensor Interface. The EMC1201 has an


    Original     		EMC1201/EMC1202 OT23-5 EMC1201 EMC1202 OT23-5, MO-178 sot29x16 Multiplexer Switches PDF

    TRANSISTOR SMD MARKING CODE

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 SMD TRANSISTOR MARKING BR TRANSISTOR SMD MARKING CODE A1 SMD TRANSISTOR MARKING DE K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE SP BSS84 Equivalent smd code marking sot23 marking A1 smd transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 18 2003 Aug 04 Philips Semiconductors Product specification P-channel enhancement mode vertical


    Original     		M3D088 BSS84 SCA75 613510/03/pp9 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD CODE PACKAGE SOT23 SMD TRANSISTOR MARKING BR TRANSISTOR SMD MARKING CODE A1 SMD TRANSISTOR MARKING DE K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE SP BSS84 Equivalent smd code marking sot23 marking A1 smd transistor PDF

    MT591

    Abstract: No abstract text available
    Text: F=l SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR I ISSUE 3- OCTOBER 1995 FEATURES * Low equivalent on-resistance; RcEl~al 210mQ at 1A E c COMPLEMENTARY B FM MT591 TYPE - PARTMARKING 491 DETAIL F ABSOLUTE MAXIMUM SOT23 RATINGS. k Collector-Base —. Voltage


    Original     		210mQ MT591 300ps. 10rnA 100mA 100nti MT591 PDF

    MMBT3904

    Abstract: MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 MMBT3904 NPN switching transistor Product specification Supersedes data of 2002 May 13 2002 Oct 04 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES QUICK REFERENCE DATA


    Original     		M3D088 MMBT3904 MMBT3906. SCA74 613514/03/pp8 MMBT3904 MMBT3906 PDF

    TRANSISTOR SMD MARKING CODE 9A

    Abstract: smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A


    Original     		M3D088 PMMT491A PMMT591A. PMMT491A TRANSISTOR SMD MARKING CODE 9A smd 551 code marking sot23 SMD transistor MARKING CODE 43 ST 9340 smd TRANSISTOR code marking pb sot23 TRANSISTOR SMD MARKING CODE SP SMD TRANSISTOR MARKING 93 all transistor data sheet book download MARKING SMD npn TRANSISTOR a1 marking code 33 SMD ic PDF

    MBG240

    Abstract: BFS17 BFS17W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS


    Original     		BFS17W OT323 BFS17W BFS17. MBC870 MBG240 BFS17 PDF

    BFT25A

    Abstract: MCD113 MCD110 RF POWER TRANSISTOR NPN
    Text: BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up


    Original     		BFT25A BFT25A MCD113 MCD110 RF POWER TRANSISTOR NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Single-chip Type with Built-in FET Switching Regulators Simple Step-down Switching Regulators with Built-in Power MOSFET BD9G101G ●General Description The BD9G101G is switching regulator with integrated internal high-side 42V Power MOSFET. It provides 0.5A DC output with small SOT23 package.


    Original     		BD9G101G BD9G101G OT-23-6 5V/800mÎ PDF

    amp 4546 jc

    Abstract: ds8838 AME8838AEIV 705 transistor AME8838 SOT-23 marking 2f p-Channel 332 z marking, sot-23 REGULATOR transistor 332 z marking sot-23
    Text: AME, Inc. AME8838 n General Description The AME8838 family of positive, linear regulators feature low quiescent current 30µA typ. low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications. The ultra-small SC-70-5, SC-70-4 & SOT-23 packages are attractive for "Pocket" and "Hand Held" applications.


    Original     		AME8838 AME8838 SC-70-5, SC-70-4 OT-23 150mA 1003-DS8838-E amp 4546 jc ds8838 AME8838AEIV 705 transistor SOT-23 marking 2f p-Channel 332 z marking, sot-23 REGULATOR transistor 332 z marking sot-23 PDF

    NTC 2.2K

    Abstract: LTC4054L DFN-16 LT1510 LT1512 LT1513 LT1769 LTC4010 LTC4011 LTC4060
    Text: 11.2005 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the


    Original     		batt593) D-73230 I-20156 SE-164 BB110520K NTC 2.2K LTC4054L DFN-16 LT1510 LT1512 LT1513 LT1769 LTC4010 LTC4011 LTC4060 PDF

    sot23 ria marking

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 80 V).


    OCR Scan     		BSS64 BSS63. MAM255 115002/00/04/pp8 sot23 ria marking PDF

    Untitled

    Abstract: No abstract text available
    Text: mi i tmit i S E M E 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS m e c h a n ic a l d a t a Dimensions in mm inches FEATURES 0.51 ± 0.10 (0.02 ± 0.0 04)


    OCR Scan     		2N2907ACSM 2N2907A 600mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor LM 3460-1.2, -1.5 Precision C ontroller fo r GTLp and G TL Bus Term ination General Description Features The LM3460 is a monolithic integrated circuit designed tor precision control ot GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and in­


    OCR Scan     		LM3460-1 LM3460 OT23-5 regu180-532 PDF

    TRANSISTOR 8073

    Abstract: ZGF300F D 1414 transistor transistor 764 9 s w 02
    Text: SOT23 NPN LOW NOISE SILICON MICROW AVE TRANSISTOR PROVISIONAL DATA ZGF300F FEATURES * H IG H G A IN B A N D W ID T H P R O D U C T . fr = 9 G H z T Y P @ lc = 25m A . * L O W N O IS E FIG U R E . * H IG H G A IN . 1.9 d B T Y P A T 1.0 GHz. |S 2 1 1 2 = 12.0 d B @ 1.0 GHz.


    OCR Scan     		ZGF300F TRANSISTOR 8073 ZGF300F D 1414 transistor transistor 764 9 s w 02 PDF

    smd transistor marking n3

    Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
    Text: DISCRETE SEMICONDUCTORS 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J


    OCR Scan     		2PC4617J 2PC4617J SC-89 OT490) SCA63 5002/00/02/pp8 smd transistor marking n3 MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55 PDF

    marking A1 TRANSISTOR

    Abstract: marking code 10 sot23 BF570 MAM255
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BF570 BF570 MAM255 marking A1 TRANSISTOR marking code 10 sot23 MAM255 PDF

    BFS17W

    Abstract: MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic


    OCR Scan     		BFS17W OT323 BFS17W BFS17. MBC870 MB0240 OT323. 711005b MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking PDF

    BCX19

    Abstract: BCX20 TRANSISTOR marking code CB
    Text: Philips Semiconductors Product specification NPN general purpose transistors BCX19; BCX20 FEATURES PINNING • High current 500 mA PIN • Low voltage (45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose amplification • Saturated switching and driver applications.


    OCR Scan     		BCX19; BCX20 BCX17 BCX18. BCX19 MAM555 BCX20 TRANSISTOR marking code CB PDF