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    TRANSISTOR T0220 Search Results

    TRANSISTOR T0220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T0220 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TO-220FN

    Abstract: No abstract text available
    Text: Magazine T0220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code T220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box


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    T0220FN O-220FN PRSS0003AB-A T220FN TO-220FN PDF

    wk 2 e transistor

    Abstract: transistor BU 705 BUT21
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.


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    BUT211 T0220AB T0220AB1 wk 2 e transistor transistor BU 705 BUT21 PDF

    BUT21

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.


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    BUT211 T0220AB BUT21 PDF

    TRANSISTOR C 557 B

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effeot power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING-T0220AB


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    BUK456-60H PINNING-T0220AB TRANSISTOR C 557 B PDF

    TRANSISTOR C 557 B

    Abstract: TRANSISTOR C 557 B W 21
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING - T0220AB


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    BUK456-60H T0220AB TRANSISTOR C 557 B TRANSISTOR C 557 B W 21 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    MP-25

    Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
    Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.


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    NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11Al GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control


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    BUT11Al T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220


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    MJE13007 MJE13007 T0-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11Al GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control


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    BUT11Al T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    BUJ103A T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    BUJ304A T0220AB PDF

    BUT12

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,


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    BUT12AI T0220AB BUT12 PDF

    BUJ301A

    Abstract: T0220AB
    Text: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    BUJ301A T0220AB T0220AB; T0220 BUJ301A PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


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    BUJ204A T0220A PDF

    BUJ105A

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    BUJ105A T0220AB 1E-02 BUJ105A PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ205A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    BUJ205A T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


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    BUJ303A T0220A PDF

    T77b

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


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    BUJ303A T0220A T77b PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in T0220AB envelope intended for use in nigh frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    BUJ403A T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


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    BUJ301A T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


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    BUJ303A T0220AB 1000BUJ303A 100US PDF

    NPN Transistor VCEO 1000V

    Abstract: LB 137 transistor
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


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    BUJ204A T0220AB MAX04A 100US NPN Transistor VCEO 1000V LB 137 transistor PDF

    BUT12

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,


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    BUT12AI T0220AB 20icon 1E-01 1E-02 BUT12 PDF