2SC3545
Abstract: LEN-160 MARKING TRANSISTOR T44
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against
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2SC3545
2SC3545
LEN-160
MARKING TRANSISTOR T44
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MARKING TRANSISTOR T44
Abstract: MPSA44
Text: CHENMKO ENTERPRISE CO.,LTD CHT44PT SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)
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CHT44PT
OT-23
OT-23)
500mA)
MPSA44
10MHz
MARKING TRANSISTOR T44
MPSA44
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CHT44GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT44GP SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)
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CHT44GP
OT-23
OT-23)
500mA)
MPSA44
10MHz
CHT44GP
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nec 817
Abstract: MARKING TRANSISTOR T44 PT4250 2SC3545
Text: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillator and mixer in a tuner of a TV receiver.
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2SC3545
2SC3545
nec 817
MARKING TRANSISTOR T44
PT4250
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE bTE T> b b S B ' m □Q2flc?c17 T44 • APX BLV33F A V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Features o f this product:
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BLV33F
BLV33F
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blw86
Abstract: 43120203664 BY206 431202036640 choke IEC134 pdst47q sot-123-2 ferroxcube wideband hf choke
Text: N AMER PHILIPS/DISCRETE bbSB'îai DDSTHbl 071 • APX BLW86 b'ïE D A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is
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BLW86
7Z77783
blw86
43120203664
BY206
431202036640 choke
IEC134
pdst47q
sot-123-2
ferroxcube wideband hf choke
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Untitled
Abstract: No abstract text available
Text: MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating
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MJEC340
3kA/10kA/10kA
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NES6294Z
Abstract: No abstract text available
Text: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6294Z
NES6294Z
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NSG2555
Abstract: TRANSISTOR T4
Text: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors
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NSG2555
NSG2555
TRANSISTOR T4
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: ?M VE5 MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 VOLTS .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability. •
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MJEC350
3kA/10kA/10kA
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Darlington Transistors NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NSG2556
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56303
Response AA0482
49/Response AA0482
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating
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MJEC340
3kA/10kA/10kA
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NES6287Z
Abstract: New England Semiconductor
Text: NES6287Z ^NEW ENGLAND SEMICONDUCTOR 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR • • • • • P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6287Z
NES6287Z
New England Semiconductor
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TRANSISTOR T4
Abstract: NSG2557
Text: NSG2557 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NSG2557
NSG2557
8-860-0CREENING
TRANSISTOR T4
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Untitled
Abstract: No abstract text available
Text: T im e s ? ^PP NSG2559 ^NEW ENGLAND SEMICONDUCTOR NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating
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NSG2559
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Untitled
Abstract: No abstract text available
Text: _ J V BD720 BD722 BD724 BD726 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and
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BD720
BD722
BD724
BD726
BD440.
BD719;
BD724.
BD722
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BLW 95
Abstract: No abstract text available
Text: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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New England Semiconductor
Abstract: NES6284
Text: NES6284 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NES6284
NES6284
New England Semiconductor
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors NES3716Z NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating Collector-Emitter Voltage
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NES3716Z
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Untitled
Abstract: No abstract text available
Text: T im e s ? ^PP NES3716Z ^NEW ENGLAND SEMICONDUCTOR NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating
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NES3716Z
3716Z
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