BUK102-50GL
Abstract: BUK102
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK102-50GL
BUK102-50GL
BUK102
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BUK101-50GL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK101-50GL
BUK101-50GL
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buk10150gl application notes
Abstract: BUK101-50GL
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK101-50GL
buk10150gl application notes
BUK101-50GL
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BUK108-50GL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other
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BUK108-50GL
BUK108-50GL
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BUK100-50GL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK100-50GL
BUK100-50GL
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BUK109-50GL
Abstract: buk109
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other
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BUK109-50GL
BUK109-50GL
buk109
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BUK110-50GL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other
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BUK110-50GL
BUK110-50GL
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BUK100-50GL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK100-50GL
BUK100-50GL
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BUK102-50GL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK102-50GL
BUK102-50GL
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BUK100-50GL
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK100-50GL
BUK100-50GL
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other
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BUK110-50GL
29-May-02)
MOSFET TRANSISTOR SMD MARKING CODE nh
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539 MOTOROLA transistor
Abstract: AN569 MTP10N10EL mosfet transistor 400 volts.100 amperes motorola TL 741
Text: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Logic Level TMOS E-FET. Power Field Effect Transistor Designer's MTP10N10EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high
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MTP10N10EL/D
MTP10N10EL
MTP10N10EL/D*
539 MOTOROLA transistor
AN569
MTP10N10EL
mosfet transistor 400 volts.100 amperes
motorola TL 741
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ss129
Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
Text: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3
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Q62702-S568
E6327:
Q67000-S243
E6433:
OT-23
ss129
SS100 TRANSISTOR DATASHEET
ss110 TRANSISTOR
ss100 transistor
SS125
q62702-s566
ss110 to-92
ss89 to-92
SS100 TO92
TRANSISTOR ss101
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PHD3N20L
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking
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OT428
PHD3N20L
PHD3N20L
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PHP3055E
Abstract: PHX3055E PHX3055L
Text: Philips Semiconductors Preliminary specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device features high avalanche energy capability, stable blocking
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OT186A
PHX3055L
PHP3055E
PHX3055E
PHX3055L
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PHP3055E
Abstract: PHP3055L
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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O220AB
PHP3055L
PHP3055E
PHP3055L
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PHP3N20L
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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O220AB
PHP3N20L
PHP3N20L
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Untitled
Abstract: No abstract text available
Text: ACE4613B Complementary Enhancement Mode Field Effect Transistor Description The ACE4613B uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
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ACE4613B
ACE4613B
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diode sg 94
Abstract: GC522 diode sg 64
Text: r Z Z SGS-THOMSON Ä 7# S TD 2 N 50 Raoei ILE gra©M][](£S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 2N 50 V dss RDS(on Id 500 V < 5.5Í1 2 A • . . . . TYPICAL Ros(on) = 4.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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O-251)
O-252)
O-251
O-252
L681001
diode sg 94
GC522
diode sg 64
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Untitled
Abstract: No abstract text available
Text: * 7# TYPE S TD 9N 10 SGS-THOMSON [MOeiMillLieraeiDIgS S T D 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0 .2 7 Q. 9 A TYPICAL RDS(on) = 0.23 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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O-251)
O-252)
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON TYPE S TD 6N 10L STD6N10L m N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss R DS on Id 100 V < 0 .4 5 Ü 6 A • • . . ■ . . ■ TYPICAL RDS(on) = 0.4 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STD6N10L
O-251)
O-252)
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 5 i L i O 7 M K I S T D 3 N 3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 3N 30L V dss R DS on Id 300 V < 1.4 a 3 A . . . . • TYPICAL RDs(on) = 1.15 0 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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O-251)
O-252)
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON :[Li ¥mî@ESgDe m S TD 2 N A 50 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD2NA50 V dss RDS on Id 500 V < 4 a 2.2 A . . . . . . . . TYPICAL RDS(on) = 3.25 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STD2NA50
O-251)
O-252)
O-251
0068772-B
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K2100
Abstract: STD6N10L
Text: S G S - T H O M S O N ¿ 5 S T D 6N 1 0 L ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TD 6N 10L V dss RDS on Id 100 V < 0.4 5 C l 6 A • . ■ . . . ■ . TYPICAL RDS(on) = 0.4 Q. AVALANCHE RUGGED TECHNOLOGY
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STD6N10L
O-251)
O-252)
STD6N10L
O-252
0068772-B
K2100
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