germanium transistors PNP
Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,
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IBM43RF0100
IBM43RF0100EV
823Vdc.
germanium transistors PNP
SiGe RF TRANSISTOR
pnp germanium transistor
SiGe PNP
TRANSISTOR MAKING LIST
SiGe PNP transistor
FMMT2907ATA
bipolar transistor ghz s-parameter
J1 TRANSISTOR
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advantage and disadvantage of igbt
Abstract: HFBR1531Z HFBR-1522ETZ
Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence
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AFBR-0546Z
AFBR-0548Z
HFBR-0543Z
AV02-3407EN
AFBR-1624Z/1629Z
AFBR-2624Z/2529Z
AV02-2699EN
HFBR-0500ETZ
IEC60664-1
AV02-3500EN
advantage and disadvantage of igbt
HFBR1531Z
HFBR-1522ETZ
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS
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BFS17A
September1995
MSB003
R77/02/pp9
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
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BFS17A
Abstract: MSB003 E2p transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage
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BFS17A
September1995
MSB003
R77/02/pp9
BFS17A
MSB003
E2p transistor
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BFG97
Abstract: BFG31 TRANSISTOR BFg97 sc7313
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
BFG97
BFG31
TRANSISTOR BFg97
sc7313
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bfg97
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
bfg97
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS
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BFS17
MSB003
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
R77/03/pp14
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marking code W1
Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,
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BFT92W
OT323
BFT92W
BFT92.
MBC870
OT323.
R77/01/pp14
marking code W1
BFT92
TRANSISTOR 3358
NH35
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bfg135 application note
Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
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BFG135
MSB002
OT223.
R77/03/pp16
771-BFG135-T/R
bfg135 application note
bfg135sot223
BFG135 amplifier
TRANSISTOR GENERAL DIGITAL L6
BFG135,115
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BFS17
Abstract: NXP BFS17 MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage
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BFS17
MSB003
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BFS17
NXP BFS17
MSB003
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BFG135 amplifier
Abstract: SC7313 BFG135 bfg135 application note MBB298
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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MSB002
R77/03/pp16
BFG135 amplifier
SC7313
BFG135
bfg135 application note
MBB298
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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OT223
MSB002
OT223.
R77/03/pp14
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BFG35
Abstract: TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
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MSB002
OT223.
R77/03/pp14
BFG35
TRANSISTOR GENERAL DIGITAL L6
BFG35 amplifier
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BFG198
Abstract: microstripline
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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OT223
MSB002
OT223.
R77/03/pp14
BFG198
microstripline
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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MSB003
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BFR106
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is
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MSB003
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BFR106
MSB003
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MPF102 equivalent transistor
Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or
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AN211A/D
r14525
AN211A/D
MPF102 equivalent transistor
MPF102 JFET
AN211A
2N3797
mpf102 fet
2N4351
MPF102 Transistor
2N3797 equivalent
mpf102 application note
P-Channel Depletion Mode FET
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin
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BFG10W/X
OT343N
MBK523
R77/01/pp11
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
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BUJ403A
O220AB
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Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ303B
O220AB
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
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O220AB
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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