Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR TIC 106 N Search Results

    TRANSISTOR TIC 106 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIC 106 N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-3 8 5 3 4 C ERTIFIED M .S.KEN NED Y C ORP. 1461 HIGH SPEED/V OLT A GE OP A MP 4 7 0 7 D e y Road Liv erpool, N. Y . 1 3 0 8 8 3 1 5 7 0 1-6 7 5 1 FE A T URES: Ex tremely F ast - 5 0 0 v/µS W ide Supply Range ± 1 5 V to ± 4 5 V V M OS Output, No Secondary Breakdo w n


    Original     		PDF MSK1461 MSK1461E MSK1461B

    BLW87

    Abstract: No abstract text available
    Text: Qs.is.s.u £s,mL- -onau.etoi O' , U na. c/ 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW87 is Designed for Class C, 12.5 V High Band Applications


    Original     		PDF BLW87 BLW87 10dBat25W/175MHz

    S12237-02P

    Abstract: No abstract text available
    Text: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36


    Original     		PDF

    PF0310A

    Abstract: PF0144 Hitachi PF0030 HE8807CL Hitachi Industry Laser Diodes HL7806
    Text: Reliability 1 Reliability 1.1 Reliability Data for CODEC LSIs T his sectio n d isc u sse s the re lia b ility d ata for Hitachi communication devices. Although current data is u sed , the rap id pace o f sem ico n d u cto r device development means new data may be added


    OCR Scan     		PDF

    AF106

    Abstract: 40HHZ AF108
    Text: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz


    OCR Scan     		PDF Q60106-X106 120ms 23SbOS AF106 40HHZ AF108

    transistor tic 106 N

    Abstract: No abstract text available
    Text: S AMSUNG ELECTRONICS INC 42E MPSA42 D B OQG^ObS 1 E3SMÚK NPN EPITAXIAL SILICON TRANSISTOR s 2r \ - \ s ' HIGH VOLTAGE TRANSISTOR • C o lle c to r-E m ltte r V oltage: VCEo =300V • C o lle c to r D is s ip a tio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPSA42 transistor tic 106 N

    vane air flow sensor

    Abstract: alnico alnico 9
    Text: APPLICATIONS INFORMATION THE HALL-EFFECT SENSOR The basic Hall sensor is simply a small sheet of sem iconductor m aterial. A constant voltage source forces a constant bias current to flow in the sem iconductor sheet. The output, a voltage m easured across the width of the sheet, reads near zero if a magnetic field is not


    OCR Scan     		PDF

    TZ 1167

    Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
    Text: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection


    OCR Scan     		PDF b3b75SM TZ 1167 bu208D U/25/20/TN26/15/850/TZ 1167

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M

    DB 22 AR transistor smd

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and


    OCR Scan     		PDF MRF6401 MRF6401PHT/D IS21I IS12I DB 22 AR transistor smd

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


    OCR Scan     		PDF TIP100/101/102 TIP101 TIP102 TIP100

    transistor IR 324 C

    Abstract: transistor selection guide
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency


    OCR Scan     		PDF NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )


    OCR Scan     		PDF 2SC3606 IS21el2

    transistor mj3001

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN M edium -Pow er Com plem entary Silicon Transistors MJ3001 Motorola Preferred Devices . . . for use as output devices in complementary general purpose amplifier applica­


    OCR Scan     		PDF MJ2501/D MJ2501 MJ3001 80EATING O-204AA transistor mj3001

    2N5552

    Abstract: No abstract text available
    Text: -Jfotttron r a t y © ¥ @ Ä ¥ Ä 1L ® LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 203mm) 2N5552. SDT06523, SDT06623 2N5552

    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


    OCR Scan     		PDF ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    BLW10

    Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
    Text: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures


    OCR Scan     		PDF BLW40 OT120 -SOT120 MBA451 BLW10 BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf

    transistor ft 960

    Abstract: smd transistor 2x5 tj3b 3b BLT81
    Text: N AMER PHILIPS/DISCRETE fc.'ìE D bbS3^31 □ÜSÖ7S'i E71 B i APX _ rro u u m apwiHwm ivn i-iiiiip» ovm iconauciors BLT81 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA


    OCR Scan     		PDF BLT81 OT223 OT223 MBA451 MRC089 transistor ft 960 smd transistor 2x5 tj3b 3b BLT81

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


    OCR Scan     		PDF RZ1214B65Y 127147/00/02/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor


    OCR Scan     		PDF RX1214B300Y RX1214B300Y OT439A 7/00/02/pp12

    4-1070

    Abstract: 45N10E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r T O -2 4 7 w ith Is o la te d M ounting H ole MTW45N10E M otorola Preferred Device TMOS POWER FET 45 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF

    transistor B 1184

    Abstract: MGR638 BFG480W
    Text: DISCRETE SEMICONDUCTORS BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 Philips Semiconductors 1998 Oct 21 PHILIPS Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain


    OCR Scan     		PDF BFG480W BFG480W MSB842 SCA60 125104/00/03/pp16 transistor B 1184 MGR638

    EM- 546 motor

    Abstract: 2N6545 2N6545 Motorola 2N6544
    Text: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,


    OCR Scan     		PDF b3b72S4 2N6545 EM- 546 motor 2N6545 Motorola 2N6544