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    TRANSISTOR TIP 146 Search Results

    TRANSISTOR TIP 146 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIP 146 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor tip 35c

    Abstract: photo transistor terminal transistor TIP 350 TIP 122 transistor APPLICATION circuit transistor TIP 662 transistor TIP 320 PCB PHOTO SENSOR TIP 122 transistor TIP 29 transistor AHF21
    Text: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL


    Original     		PDF

    TIP 40c transistor

    Abstract: transistor tip 35c transistor TIP 662 transistor TIP 350 TIP 122 transistor APPLICATION circuit photo transistor terminal transistor equivalent of tip 50 transistor tip 360 tip 145 transistor
    Text: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL


    Original     		PDF

    schematic diagram 48V telecom ups

    Abstract: 0.1u 50v LED pspice datasheet White LED pspice model schematic diagram 48V power supply 1N4002 diode download datasheet DIP 24V TO 5V LM SQUARE WAVE TO SINE WAVE schematic diagram telephone handset circuit schematic diagram BNC connector 50 ohm
    Text: Am79489 SLIC Evaluation Board User’s Guide Ver. 1.0 April 8, 1998 Advanced Micro Devices, Inc. Communications Products Division Public Infrastructure Products Document Number: CPD/P-146 This document discusses the operation of the Am79489 SLIC device Evaluation Board.


    Original     		PDF Am79489 CPD/P-146 RJ-11-type schematic diagram 48V telecom ups 0.1u 50v LED pspice datasheet White LED pspice model schematic diagram 48V power supply 1N4002 diode download datasheet DIP 24V TO 5V LM SQUARE WAVE TO SINE WAVE schematic diagram telephone handset circuit schematic diagram BNC connector 50 ohm

    N681622

    Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
    Text: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.


    Original     		PDF N681386/87 N681386/87, 16-bit N681622 W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg

    transistor dtx 360 mosfet

    Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Hz/16 GR-909 transistor dtx 360 mosfet transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild

    sot-23 marking code 2fn

    Abstract: transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering


    Original     		PDF Si3210) 90VPK sot-23 marking code 2fn transistor dtx 360 mosfet TRANSISTOR SMD MARKING CODE r28 SMD SOT23 transistor MARK Y2 transistor 2Fn transistor smd marking codes c9 zetex marking code R51 SMD Transistor transistor dtx 360 transistor equivalent 2n5551 MLT 22 MOSFET AUDIO AMPLIFIER

    4w-2w hybrid

    Abstract: telephone schemes Full duplex PCM
    Text: HC55171 S E M I C O N D U C T O R 5 REN Ringing SLIC Subscriber Line Interface Circuit April 1998 Features Description • • • • • • • The HC55171 is backward compatible to the HC5517 with the added capability of driving 5 REN loads. The HC55171 is


    Original     		PDF HC55171 HC55171 HC5517 -80ts 1-800-4-HARRIS 4w-2w hybrid telephone schemes Full duplex PCM

    HC55171CM

    Abstract: ringing tip ring pots telephone 90v 48v 4w-2w hybrid HC5517 HC55171 HC55171CB HC55171IB HC55171IM
    Text: HC55171 Data Sheet July 1998 File Number 4323.4 5 REN Ringing SLIC for ISDN Modem/TA and WLL Features The HC55171 is backward compatible to the HC5517 with the added capability of driving 5 REN loads. The HC55171 is ideal for any modem or remote networking access


    Original     		PDF HC55171 HC55171 HC5517 75VPEAK HC55171CM ringing tip ring pots telephone 90v 48v 4w-2w hybrid HC55171CB HC55171IB HC55171IM

    8508 zener

    Abstract: 4w-2w hybrid AN9607 HC5517 HC55171 HC55171IM ringing tip ring pots telephone 90v 48v
    Text: HC55171 TM Data Sheet October 2000 5 REN Ringing SLIC for ISDN Modem/TA and WLL File Number Features • 5 REN Thru SLIC Ringing Capability to 75VPEAK The HC55171 is backward compatible to the HC5517 with the added capability of driving 5 REN loads. The HC55171 is


    Original     		PDF HC55171 75VPEAK HC55171 HC5517 8508 zener 4w-2w hybrid AN9607 HC55171IM ringing tip ring pots telephone 90v 48v

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 45F/146F/147F 140F/141F/142F TIP145F TIP146F TIP147F

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 40F/141 F/142F 145F/146F/147F TIP141T TIP142T TIP140T 41HP1

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 40F/141 F/142F 145F/146F/147F TIP141T TIP142T TIP140T

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P F C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 45F/146F/147F 140F/141F/142F TIP145F TIP146F TIP147F

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A TO -3P MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE y . ' . W C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP142F TIP141F TIP140F

    142 TRANSISTOR

    Abstract: TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F
    Text: NPN EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ V ce = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P • C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP140/141 TIP145/146/147 TIP140 TIP141 TIP142 142 TRANSISTOR TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F

    tip 147 TRANSISTOR

    Abstract: tip 145 transistor transistor tip 142 TIP14 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Com plement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 TIP140/141/142 TIP14 TIP147 I45/146/147 tip 147 TRANSISTOR tip 145 transistor transistor tip 142 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146

    tip 147 TRANSISTOR

    Abstract: TIP147F TIP146F TIP145F
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to T IP 140F /141F /142F ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF TIP145F/146F/147F /141F /142F 45F/146F/147 tip 147 TRANSISTOR TIP147F TIP146F TIP145F

    tip 147 transistor

    Abstract: transistor tip 142 npn tip tip 141 transistor tip 35 c transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN h FE = 1000 @ V ce * -4V , IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to TIP145/146/147 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 --20mA, TIP140/141A142 tip 147 transistor transistor tip 142 npn tip tip 141 transistor tip 35 c transistor

    141F

    Abstract: 142F
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE * -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to T IP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF TIP140F/141F/142F 145F/146F/147F 141F 142F

    GE636

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T


    OCR Scan     		PDF TIP145T/146T/147T TIP140T/141T/142T GE636

    TIP 41 transistor

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=4V, lc = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C om plem ent to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP140T/141T/142T TIP145T/146T/147T TIP 41 transistor

    tip45

    Abstract: TIP14
    Text: PNP EPITAXIAL TIP145/146/147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p le m e n t to TI P 1 4 0 /1 4 1 /1 4 2


    OCR Scan     		PDF TIP145/146/147 tip45 TIP14

    TIP1477

    Abstract: TLP147 k 3531 transistor TIP145F TIP146F TIP147F transistor K 3531 TIP147T pnp darlington to-220 10a
    Text: SAMSU NG SEM ICONDUCTOR INC 14E D B.Tab'llME GG077SG 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAltf' MIN hFE=1000 @ V c e = — 4 V , lc = -5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


    OCR Scan     		PDF 7UH112 aG077SG TIP145F/146F/147F TIP140F/141F/142F TIP145F TIP146F TIP147F TIP1477 TLP147 k 3531 transistor TIP145F TIP146F TIP147F transistor K 3531 TIP147T pnp darlington to-220 10a

    tip146

    Abstract: tip 146 TIP145 tip147 147 B transistor
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSÌSTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE* 1000 @ V c e = *4V, IC * -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Complement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF TIP145/146/147 TIP140/141/142 TIP145 TIP146 TIP147 TIPI45/146/147 tip146 tip 146 TIP145 tip147 147 B transistor