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    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    TJ2499

    Abstract: SJ1499 transistor tj2499 stk 200W sfc2709 A709 transistor 2n3055 datenblatt tj2499 motorola 150w stk CV120
    Text: Drucker, Geräte von Dual, Röhrenradios 2 von 10 http://www.n-malek.de/11201/11232.html Die folgenden Geräte in dieser Klasse sind konstruktiv sehr ähnlich. Sie bauen auf dem CV80 au des CV40. Der CV80 ist resistent gegen ausgefallene Ruhestrompotis, was beim CV120 und CV121 absolut


    Original     		PDF de/11201/11232 CV120 CV121 120-er TJ2499 SJ1499 TJ2499 transistor tj2499 stk 200W sfc2709 A709 transistor 2n3055 datenblatt tj2499 motorola 150w stk