Untitled
Abstract: No abstract text available
Text: SMALL SIGNAL HIGH VOLTAGE TRANSISTOR NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208
|
Original
|
2N5551
MIL-STD-202G,
|
PDF
|
NPN SMALL SIGNAL TRANSISTOR
Abstract: transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10
Text: Small Signal High Voltage Transistor NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208
|
Original
|
2N5551
MIL-STD-202G,
NPN SMALL SIGNAL TRANSISTOR
transistor 2n5551
2N5551
transistor equivalent 2n5551
Transistor AH 10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
|
Original
|
2N5551
100uA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
|
Original
|
2N5551
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551K TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
|
Original
|
2N5551K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR（ NPN ） TO-92 FEATURES •Switching and amplification in high voltage Applications such as telephony · 1. EMITTER Low current max. 600mA 2. BASE
|
Original
|
2N5551
600mA)
CHARACT80
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)
|
Original
|
2N5551
600mA)
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)
|
Original
|
2N5551
600mA)
100MHz
|
PDF
|
Transistors 2n5551
Abstract: 2N5551
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range
|
Original
|
2N5551
30MHz
Transistors 2n5551
2N5551
|
PDF
|
Transys Electronics
Abstract: transistor cb 180 2N5551
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range
|
Original
|
2N5551
30MHz
Transys Electronics
transistor cb 180
2N5551
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR（ NPN ） TO-92 FEATURES •Switching and amplification in high voltage Applications such as telephony · 1. EMITTER Low current max. 600mA 2. BASE · High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted
|
Original
|
2N5551
600mA)
break80
100MHz
|
PDF
|
transistor 2n5551
Abstract: 2N5551-NPN 2N5551
Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
|
Original
|
2N5551
625mW
Width300s,
transistor 2n5551
2N5551-NPN
2N5551
|
PDF
|
2N5551G
Abstract: transistor 2n5551 2N5551-NPN 2N5551 2N5551 circuit VCEO160V 2N5551-X-AB3-R C2N5551
Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS 1 TO-92 * Telephone switching circuit * Amplifier ORDERING INFORMATION
|
Original
|
2N5551
OT-89
2N5551-x-AB3-R
2N5551-x-T92-B
2N5551-x-T92-K
2N5551L-x-AB3-R
2N5551L-x-T92-B
2N5551L-x-T92-K
2N5551G-x-AB3-R
2N5551G-x-T92-B
2N5551G
transistor 2n5551
2N5551-NPN
2N5551
2N5551 circuit
VCEO160V
2N5551-X-AB3-R
C2N5551
|
PDF
|
2N5551L
Abstract: 2N5551L-x-AB3-R 2N5551 circuit 2N5551 2N5551 transistor 2N5551-NPN Transistor TO-92 2N5551 2N5551 TO92 high voltage npn transistor SOT-89 2N5551 UTC
Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS 1 * Telephone switching circuit TO-92 * Amplifier *Pb-free plating product number: 2N5551L
|
Original
|
2N5551
OT-89
2N5551L
2N5551-x-AB3-R
2N5551L-x-AB3-R
2N5551-x-T92-B
2N5551L-x-T92-B
2N5551-x-T92-K
2N5551L-x-T92-K
2N5551L
2N5551L-x-AB3-R
2N5551 circuit
2N5551
2N5551 transistor
2N5551-NPN
Transistor TO-92 2N5551
2N5551 TO92
high voltage npn transistor SOT-89
2N5551 UTC
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified
|
Original
|
2N5551
QW-R201-002
|
PDF
|
2N5551
Abstract: No abstract text available
Text: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified
|
Original
|
2N5551
QW-R201-002
2N5551
|
PDF
|
bc 357 transistor pin details
Abstract: 2N5551
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified
|
Original
|
ISO/TS16949
2N5551
25deg
C-120
bc 357 transistor pin details
2N5551
|
PDF
|
MARKING G3 Transistor
Abstract: Transistor TO-92 2N5551 2N5401 2N5551
Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic
|
OCR Scan
|
2N5551
2N5401
MIL-STD-202,
2N5551
100MHz
250nA,
10Hzto
300ns,
DS11105
MARKING G3 Transistor
Transistor TO-92 2N5551
|
PDF
|
MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
|
OCR Scan
|
O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL BLBCTRON1CS LID . 2N5551 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package TO-92 * Collector-Emitter Voltage VCEO=160V * Collector Dissipation Pc MAX =625 mW ABSOLUTE MAXIMUM RATINGS at Tan*=25'c
|
OCR Scan
|
2N5551
100uA
250uA
10Hztol5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SyriSEM i T O -92 Plastic Encapsulate Transistors 5YM5EM1 SEMICONDUCTOR 2N5551 TRANSISTOR NPN TO — 92 FEATURES Power dissipation PCM : 0 .6 2 5 W (Tamb=25 °C ) Collector current 1. EMITTER Icm : 0.6 A 2. BASE Collector base voltage V Operating and storage junction temperature range
|
OCR Scan
|
2N5551
270TYP
050TYP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ck >=160V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO Collector-Base Voltage Collector-Emitter \foltage
|
OCR Scan
|
2N5551
625mW
100/iA,
10//A,
100MHz
10Hzto
|
PDF
|
transistor 1kt
Abstract: No abstract text available
Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR » Collector-Emitter Voltage: V c e o = 1 6 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Sym bol Collector-Base Voltage Collector-Em itter Voltage
|
OCR Scan
|
2N5551
625mW
250/iA,
transistor 1kt
|
PDF
|
vqe 14 display
Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
Text: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim
|
OCR Scan
|
2N5551
2N5401
MIL-STD-202,
100MHz
250nA,
300ps,
DS11105
2N5551
vqe 14 display
vqe 14 e led display
vqb 200 d
|
PDF
|
