TRANSISTOR U4 Search Results

TRANSISTOR U4 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR U4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
MPSU45 Abstract: transistor mpsu45 Text: , Una. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MPS-U45 (SILICON) NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . . designed for amplifier and driver applications,	Original	MPS-U45 MPSU45 transistor mpsu45	PDF
darlington power transistor 10a Abstract: npn DARLINGTON 10A TO-202 transistor NPN IB-20mA CEN-U45 TO-202 transistor npn transistor gain 20 current 200mA Text: Central TM Semiconductor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 type is an NPN Silicon Monolithic Darlington Transistor designed for applications requiring high gain and high power dissipation. MARKING CODE: FULL PART NUMBER	Original	CEN-U45 CEN-U45 O-202 200mA, 28-August 200mA 500mA 100MHz darlington power transistor 10a npn DARLINGTON 10A TO-202 transistor NPN IB-20mA TO-202 transistor npn transistor gain 20 current 200mA	PDF
transistor mpsu45 Abstract: MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor Text: MPS-U45 SILICON NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . designed fo r a m plifier and driver applications. • High DC C urrent Gain hpE = 25,000 (Min) @ l c = 200 mAdc 15,000 (Min) @ lc = 500 mAdc • C ollector-E m itter Breakdown Voltage —	OCR Scan	MPS-U45 MPS-U95 01-MPS-AI3IDARLINGT0NI MPS-A70 MPS-A20 Q4-MPS-U45 transistor mpsu45 MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor	PDF
Untitled Abstract: No abstract text available Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications	Original	RN2101CT RN2106CT RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN1101CT RN1106CT	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a	OCR Scan	BUK564-200A BUK564-200A	PDF
darlington power transistor 10a Abstract: IB-20mA TO-202 transistor TO-202 transistor NPN transistor TO-202 npn DARLINGTON 10A LC10A CEN-U45 Text: CEN-U45 w w w. c e n t r a l s e m i . c o m NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 is a NPN silicon Darlington transistor designed for general purpose amplifier and driver applications where high gain and high power dissipation is required.	Original	CEN-U45 CEN-U45 O-202 200mA, 200mA 500mA 100MHz 23-January darlington power transistor 10a IB-20mA TO-202 transistor TO-202 transistor NPN transistor TO-202 npn DARLINGTON 10A LC10A	PDF
PNP TRANSISTOR "SOT89" Abstract: SOT-89 TRANSISTOR PNP PNP TRANSISTOR SOT89 transistor PNP 5 w Text: PNP ᒦ৖ൈहࡍྯ૵਌ PNP Medium Power Transistor PNP Medium Power Transistor FHFCX593 PNP ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX493 SOT-89 PIN ASSIGNMENT 引腳說明	Original	FHFCX593 OT-89 FHFCX493 OT-89 FHFCX593 Char20 -250mA -25mA -500mA PNP TRANSISTOR "SOT89" SOT-89 TRANSISTOR PNP PNP TRANSISTOR SOT89 transistor PNP 5 w	PDF
CEN-U45 Abstract: No abstract text available Text: Datasheet central Sem icondu ctor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U45 type is a NPN Silicon Monolithic Darlington Transistor designed	OCR Scan	CEN-U45 T0-202 CEN-U45 200mA 500mA 200mA, 100MHz O-202	PDF
NPN Transistor 1A 100V Abstract: sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor FHFCX493 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX593 SOT-89 PIN ASSIGNMENT 引腳說明	Original	FHFCX493 OT-89 FHFCX593 OT-89 FHFCX493 500mA 100mA 100MHZ NPN Transistor 1A 100V sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN	PDF
RN1101FS Abstract: RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS Text: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm	Original	RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS RN1106FS RN2103FS RN2106FS	PDF
Untitled Abstract: No abstract text available Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications	Original	RN2101CT RN2106CT RN2101CT RN2102CT RN2103CT RN2104CT RN2105CT RN1101CT RN1106CT	PDF
RN2104FS Abstract: RN2101FS RN2105FS RN1101FS RN1106FS RN2102FS RN2103FS RN2106FS Text: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05	Original	RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS RN1106FS RN2103FS RN2106FS	PDF
Untitled Abstract: No abstract text available Text: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05	Original	RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS	PDF

Untitled Abstract: No abstract text available Text: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05	Original	RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS	PDF
VCE-12V Abstract: No abstract text available Text: ౑ࡒ঱ຫ਌ NPN 7 GHz wideband transistor FHT591 NPN 7 GHz wideband transistor ౑ࡒ঱ຫ਌ DESCRIPTION & FEATURES 概述及特點 High power gain 高增益 Low noise figure 低雜訊 High transition frequency 超高頻 Intended for applications in the GHz range such as MATV or	Original	OT-223 900MHz GUM10log DIN45004B) VCE-12V	PDF
2SD1066 Abstract: TRANSISTOR fuji 2sd1066 2SD106 Text: 2SD1066 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE BUILDING BLOCK TRANSISTOR ＮＰＮ三重拡散プレーナ形ビルディングブロックトランジスタパワーダーリントン POWER DARLINGTON HIGH VOLTAGE,HIGH CURRENT,HIGH SPEED SWITCHING	Original	2SD1066 150mA 2SD1066 TRANSISTOR fuji 2sd1066 2SD106	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology	OCR Scan	BUK7840-55 OT223	PDF
2SD981 Abstract: TV power transistor 700 v power transistor Text: 2SD981 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR ＮＰＮ三重拡散プレーナ形ウルトラハイベータウルトラハイベータ (UBT 外形寸法 : Outline Drawings 外形寸法: TO-3 特長：Features 特長：	Original	2SD981 2SD981 TV power transistor 700 v power transistor	PDF
2SC2770 Abstract: 013 transistor 2sc2770 fuji power supply pc Text: 2SC2770 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形ビルディングブロックトランジスタ TRIPLE DIFFUSED PLANER TYPE BUILDING BLOCK TRANSISTOR 一般工業電源用 INDUSTRIAL USE POWER SUPPLY 外形寸法: 外形寸法 : Outline Drawings	Original	2SC2770 300mA 2SC2770 013 transistor 2sc2770 fuji power supply pc	PDF
2SD920 Abstract: 2SD92 700 v power transistor Text: 2SD920 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形ウルトラハイベータウルトラハイベータ (UBT TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR 一般工業電源用 INDUSTRIAL USE POWER SUPPLY 外形寸法 : Outline Drawings	Original	2SD920 2SD920 2SD92 700 v power transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose	OCR Scan	BUK464-60H	PDF
Untitled Abstract: No abstract text available Text: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N	Original	HBDM60V600W MMBT2907A MMBTA06 OT-363 J-STD-020D MIL-STD-202, DS30701	PDF
k426 Abstract: LD 25 V BUK426-800A transistor bu Text: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	BUK426-800A/B 711005t. BUK426 -600A -800B PINNING-SOT199 k426 LD 25 V BUK426-800A transistor bu	PDF

TRANSISTOR U4 Search Results

TRANSISTOR U4 Result Highlights (5)

TRANSISTOR U4 Datasheets Context Search

oz960

MPSU45

darlington power transistor 10a

transistor mpsu45

Untitled

Untitled

darlington power transistor 10a

PNP TRANSISTOR "SOT89"

CEN-U45

NPN Transistor 1A 100V

RN1101FS

Untitled

RN2104FS

Untitled

Untitled

VCE-12V

2SD1066

Untitled

2SD981

2SC2770

2SD920

Untitled

Untitled

k426