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    TRANSISTOR UJT Search Results

    TRANSISTOR UJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR UJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    applications of ujt

    Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download
    Text: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)


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    PDF NTE6410 NTE6410 300mW applications of ujt ujt transistor UJT APPLICATION applications of ujt with circuits ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download

    scr speed control dc motor using ujt and scr

    Abstract: speed control of dc motor using ujt scr applications of ujt with circuits electronic series and parallel circuits flowing c SCR CONTROL BY UJT CIRCUIT Chattering relay scr driving circuit for dc motor C5010 speed control scr ujt applications of ujt
    Text: APPLICATIONS OF RELAYS IN ELECTRONIC CIRCUITS APPLICATIONS OF RELAYS IN ELECTRONIC CIRCUITS [1] RELAY DRIVE BY MEANS OF A TRANSISTOR 1. Connection Method If the relay is transistor driven, we recommend using it with a collector connection. The voltage impressed on the relay is


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    PDF C5010 scr speed control dc motor using ujt and scr speed control of dc motor using ujt scr applications of ujt with circuits electronic series and parallel circuits flowing c SCR CONTROL BY UJT CIRCUIT Chattering relay scr driving circuit for dc motor C5010 speed control scr ujt applications of ujt

    NTE4011B

    Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069
    Text: NTE Electronics Transistors, Diodes, Rectifiers and ICs Silicon Unijunction Transistor UJT Stock No. Mfr.Õs Type Case Style 935-6196 935-6200 935-6202 6401 6409 6410 TO18 TO18 TO92 Maximum RMS Emitter Current Intrinsic Stand Off Ratio Interbase Resistance


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    PDF TE7475 NTE992 NTE7476 NTE2013 NTE7486 NTE4001B NTE7490 NTE4011B NTE74121 NTE4013B NTE955M NTE956 NTE4081B NTE931 NTE4069

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    at30b

    Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
    Text: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz


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    PDF AT-30511 AT-30633 AT-30533 OT-23 OT-143 OT-23, at30b AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N3980

    Abstract: No abstract text available
    Text: MO T O R O L A SC DIODES/O PTO I 35E D •.* b 3 k ? S 5 5 OOflOlOb ? ■ NOT RECOMMENDED FOR NEW DESIGNS I 2N3980 PN Unijunction Transistor Silicon Annular PN Unijunction Transistor . . . designed for military and industrial use in pulse, timing, sensing, and oscillator


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    PDF b3b7S55 2N3980 35inimum 2N3980

    unijunction transistor

    Abstract: No abstract text available
    Text: M O T O R O L A SC D IOD ES/ OP TO 35E D • . ‘t 3 t 7 a S S OOflCnOb ? ■ NOT RECOMMENDED FOR NEW DESIGNS I 2N3980 PIM Unijunction Transistor Silicon Annular PN Unijunction Transistor . . . designed for military and industrial use in pulse, timing, sensing, and oscillator


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    PDF 2N3980 unijunction transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number Case Style Diagram Number RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <pA) lE V bb Pd •e o Intrinsic Stand Off Ratio Interbase


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    PDF 175mA T092/T098 9h/127b

    NTE+6402

    Abstract: No abstract text available
    Text: SPECIAL DEVICES SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number 6400 6400A 6401 6409 6410 Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <(lA) Ie VBB Pd •eo


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    IR2E27A

    Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
    Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r


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    PDF 24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    PDF 2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits

    TN41A

    Abstract: TN41 Unit junction transistor UJT ujt unijunction transistor
    Text: PROGRAMMABLE UNIJUNCTION TRANSISTOR TN41 A,B SILICON PLANAR TYPE THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, Unit in mm PULSER AND TIMMER APPLICATIONS. FEATURES : . Programmable Item : RßB, 9 » lv and IP . low leakage Current : [GAO= 10nA(Max.) . High Pulse Output Voltage


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    PDF 100nA TN41A TN41B 100/is TN41A TN41 Unit junction transistor UJT ujt unijunction transistor

    ujt trigger circuit

    Abstract: ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 2N6028 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028
    Text: "Öl G E SOLID STATE 3875081 G E SOLID STATE DE'] 3fl7SDfll 0D1Ö01Ö t. 01E 18018 D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: Applications: • Planar Passivated Structure


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    PDF 2N6027, 2N6028, GES6027, GES6028 2N6028 14--Hour ujt trigger circuit ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028

    ujt transistor 2n2160

    Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIG G ERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    PDF 2N489-494â 2N2646-47â ujt transistor 2n2160 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits

    TN41

    Abstract: TN41A
    Text: TOSHIBA TN41AJN41B TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR TN41A SILICON PLANAR TYPE TNZL1R THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER Unit in mm APPLICATIONS ¿5.1 M AX. • Low Leakage Current : lG A O ~ l^ n^- Max. I(^Kg = 100nA (Max.)


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    PDF TN41AJN41B TN41A 100nA TN41B TN41 TN41A

    transistor 123 DL

    Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
    Text: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current


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    PDF 2N6027 2N6028, GES6027, GES6028 2N6027, 2N6028 GES6028 92CS-4234Â transistor 123 DL equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT

    SCR CONTROL BY PUT CIRCUIT

    Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1
    Text: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.


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    PDF 2IM5810-6Q17 GES5810-6017 2N6027 2N6028 2N2926 SCR CONTROL BY PUT CIRCUIT ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1

    Chattering relay

    Abstract: No abstract text available
    Text: Applications of Relays in Electronic Circuits RELAY DRIVE BY MEANS OF A TRANSISTOR • Connection method The voltage impressed on the relay is always full rated voltage, and in the OFF time, the voltage is completely zero for avoidance of trouble in use. Fig. 1


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    PDF C5010 Chattering relay

    TN41A

    Abstract: TN-41A
    Text: TN41 A,TN41 B TO SHIBA TOSHIBA PRO GA M M ABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE TN41A, TN41B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIM ER U nit in mm APPLICATIONS {¡5.1 M A X • Low Leakage Current : lQAO = 10nA Max. IGKS = lOOnA (Max.)


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    PDF TN41A, TN41B TN41A 510kn TN41A TN-41A

    EVK31-050

    Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
    Text: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr


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    PDF 480VAC 50AV75A, fa100 ETG81-050 ETK81-050 ETK85-050 ETL81-050 ET127* ETM36-030* ETN36-030* EVK31-050 EVL31-050 EVM31-050 EVF31T-050A EVK71-050 EV1234M EVG31-050 ET1266M