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    TRANSISTOR VCE 1000V Search Results

    TRANSISTOR VCE 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VCE 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FZT696B

    Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8


    Original     		PDF OT223 FZT696B 100mA 100mA, 200mA, 50MHz FZT696B NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor

    ir igbt 1200V 40A

    Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
    Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package


    Original     		PDF IRGPS40B120U Super-247 20KHz Super-247TM 5M-1994. O-274AA ir igbt 1200V 40A igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package

    IRG4PH40S

    Abstract: No abstract text available
    Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V


    Original     		PDF IRG4PH40S O-247AC O-247AC IRG4PH40S

    IRG4PH40S

    Abstract: No abstract text available
    Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V


    Original     		PDF IRG4PH40S O-247AC O-247AC IRG4PH40S

    transistor A55

    Abstract: mount transistor A55 IRG4PH40
    Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low Vce on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V


    Original     		PDF IRG4PH40S O-247AC O-247AC transistor A55 mount transistor A55 IRG4PH40

    Untitled

    Abstract: No abstract text available
    Text: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PG35UPbF IRG7PG35U-EPbF O-247AC O-247AD IRG7PG35UPbF/IRG7PG35U-EPbF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original     		PDF IRG7PG42UDPbF IRG7PG42UD-EPbF IRG7PG42UDPbF/IRG7PG42UD-EPbF O-247AC JESD47F) O-247AD

    Untitled

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E


    Original     		PDF AP30G100W 30G100W

    transistor TO-3P Outline Dimensions

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant


    Original     		PDF AP30G100W Fig11. 30G100W transistor TO-3P Outline Dimensions

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IC110 IXBF42N300 100ms 42N300

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXBF42N300 IC110 IC110 100ms 100ms 42N300

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 5899A IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1B20N300C IC110 20N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1B15N300C IC110 15N300C

    TRANSISTOR N 1380 600 300 SC

    Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
    Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 4295A IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA TRANSISTOR N 1380 600 300 SC MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V

    Untitled

    Abstract: No abstract text available
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295D IRGPS40B120U Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    mosfet 1200V 40A

    Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295D IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A

    IXBF

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000


    Original     		PDF IXBF42N300 IC110 IC110 100ms 100ms 42N300 IXBF

    mosfet 1200V 40A

    Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
    Text: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295B IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRGPS40B120U transistor 600v 500a 312V marking code l200h

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    Untitled

    Abstract: No abstract text available
    Text: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295C IRGPS40B120U Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    P channel 600v 20a IGBT

    Abstract: HF40D120ACE IRGP20B120U-E
    Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package


    Original     		PDF IRGP20B120U-E O-247 20KHz O-247AD O-247AD P channel 600v 20a IGBT HF40D120ACE IRGP20B120U-E

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF20N360 IC110 20N360 H7-B11)

    GT15N101

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR GT15N101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15,9 MAX Zi3.2±a2 . High Input Impedance . High Speed : tf=l.Oils Max. ) . Low Saturation Voltage ; VcE(sat)=5.0V(Max.)


    OCR Scan     		PDF GT15N101 GT15N101