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    TRANSISTOR VCE 1000V TO220 Search Results

    TRANSISTOR VCE 1000V TO220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VCE 1000V TO220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor VCE 1000V

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
    Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:


    Original     		PDF NTE2333 NTE2333 130mA, 650mA 600mA, transistor VCE 1000V npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a

    NPN Transistor VCEO 1000V

    Abstract: transistor VCE 1000V
    Text: NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems,


    Original     		PDF NTE2313 NTE2313 200mA 500mA, NPN Transistor VCEO 1000V transistor VCE 1000V

    BUL54A

    Abstract: NPN Transistor VCEO 1000V
    Text: SEME BUL54A–SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11.5 0.25 3.5 1 3 3.0 9.0 1.5 15.8 4.6 2.0 3.5 2 8.5 FEATURES TO220 Ceramic Surface Mount Package Pad 1 – Base Pad 2 – Collector


    Original     		PDF BUL54A 500mA 100mA 10MHz NPN Transistor VCEO 1000V

    BUJ106A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    Original     		PDF BUJ106A O220AB BUJ106A

    Untitled

    Abstract: No abstract text available
    Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor


    Original     		PDF NTE2679 O220F 100mA, 750mA,

    buj303a

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original     		PDF BUJ303A O220AB buj303a

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    Original     		PDF BUJ403A O220AB

    BUJ303B

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor


    Original     		PDF BUJ303B O220AB BUJ303B

    silicon transistor Vcbo 800 Vceo 1000 Ic 20A

    Abstract: ELECTRONIC BALLAST philips PHE13005
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,


    Original     		PDF PHE13005 PHE13005 O220AB silicon transistor Vcbo 800 Vceo 1000 Ic 20A ELECTRONIC BALLAST philips

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL74A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


    Original     		PDF BUL74A O-220

    BUL74A

    Abstract: NPN Transistor VCEO 1000V
    Text: SEME BUL74A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


    Original     		PDF BUL74A O-220 BUL74A NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA

    BUL52A

    Abstract: semefab NPN Transistor VCEO 1000V
    Text: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54


    Original     		PDF BUL52A 100mA BUL52A semefab NPN Transistor VCEO 1000V

    NPN Transistor VCEO 1000V

    Abstract: BUL54A transistor 500v 0.5a
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA NPN Transistor VCEO 1000V BUL54A transistor 500v 0.5a

    BUL54AFI

    Abstract: transistor 500v 0.5a NPN Transistor VCEO 1000V
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA BUL54AFI transistor 500v 0.5a NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA

    SEM-E

    Abstract: transistor VCE 1000V to220 01455 NPN Transistor VCEO 1000V vce 500v NPN Transistor BUL52AFI transistor 500v 0.5a
    Text: SEME BUL52AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 Designed for use in electronic ballast applications 15.1 3.6 Dia. • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE


    Original     		PDF BUL52AFI SEM-E transistor VCE 1000V to220 01455 NPN Transistor VCEO 1000V vce 500v NPN Transistor BUL52AFI transistor 500v 0.5a

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ103A O220AB SCA60 135104/240/02/pp12

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL52AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 Designed for use in electronic ballast applications 15.1 3.6 Dia. • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE


    Original     		PDF BUL52AFI

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ303B O220AB

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ303B BUJ303B O220AB

    NPN Transistor VCEO 1000V

    Abstract: 2SC5416 NPN Transistor VCEO 1000V ic15a
    Text: Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)


    Original     		PDF EN5696 2SC5416 2079B-TO220FI 2SC5416] NPN Transistor VCEO 1000V 2SC5416 NPN Transistor VCEO 1000V ic15a

    transistor 3005

    Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER


    OCR Scan     		PDF CT60AM-20 20MAX. T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S transistor 3005 transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201