oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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a406 rf npn
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA855TD
2SC5737,
2SC5745)
2SC5737
2SC5745
PA855TD1
PU10098EJ01V0DS
a406 rf npn
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2SC5737
Abstract: 2SC5745
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA855TD
2SC5737,
2SC5745)
S21e2
2SC5737
2SC5745
PA855TD-T3
2SC5737
2SC5745
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MRC165
Abstract: PMBF4416 PMBF4416A MRC168 mrc160
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A
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PMBF4416;
PMBF4416A
MAM385
PMBF4416:
PMBF4416A:
MRC165
PMBF4416
PMBF4416A
MRC168
mrc160
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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pn4416
Abstract: MRC165 PN4416A MRC168
Text: DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES QUICK REFERENCE DATA
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PN4416;
PN4416A
PN4416
pn4416
MRC165
PN4416A
MRC168
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BC108 characteristic
Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1
Reduc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC108 characteristic
BC237
c 2026 y transistor
msc2295
marking 7m SOT-323
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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transistor 835
Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558
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BC327;
BC327A;
BC328
BC337;
BC337A;
BC338
BC546;
BC547;
BC548
BC556;
transistor 835
Amplifier with transistor BC548
TRANSISTOR regulator
AUDIO Amplifier with transistor BC548
transistor 81 110 w 85
transistor 81 110 w 63
transistor
transistor 438
TRANSISTOR GUIDE
transistor 649
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCA50AA100
E76102
QCA50AA10
I20i------------
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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BUK581-100A
OT223
BUK581-100A
OT223.
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK562-60A Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for
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BUK562-60A
SQT404
BUK562-60A
tina14
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IE-02
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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PHD3N20L
IE-02
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP6N60E QUICK REFERENCE DATA SYMBOL PARAMETER N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable
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PHP6N60E
T0220AB
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS
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BULD128D-1
BULD128DA-1
BULD128DB-1
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BUF653
Abstract: No abstract text available
Text: _ BUF653 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF653
20-Jan-99
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BUF660
Abstract: No abstract text available
Text: _ BUF660 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF660
20-Jan-99
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sd 1074 transistor
Abstract: transistor k 208 current limiting diodes fet transistor sd 1074
Text: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER transistor in a plastic envelope
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BUK9120-48TC
JunctiE-03
1E-04
IE-05
BUK9120-48TC
sd 1074 transistor
transistor k 208
current limiting diodes fet
transistor sd 1074
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,
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BUK454-60H
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP26N10E
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor isolated version of PHP3N50E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP3N50E
PHX2N50E
OT186A
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c151i
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT223 PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT a > N-channel enhancement mode fiefd-effect power transistor in a plastic envelope suitable for surface
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BU4C481-60A
OT223
K481-60A
c151i
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BUK455
Abstract: BUK455-200A BUK455-200B T0220AB
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-200A/B
BUK455
-200A
-200B
T0220AB
T0220AB;
T0220
BUK455-200A
BUK455-200B
T0220AB
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