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    TRANSISTOR W2 Search Results

    TRANSISTOR W2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA143EE 416/SC

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA114YE 416/SC 6aa marking

    transistor sc59 marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		PDF DTC114TE DTC114TE 416/SC transistor sc59 marking

    6aa marking

    Abstract: 327 SOT-6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		PDF DTC114YE DTC114YE 416/SC 6aa marking 327 SOT-6

    MDA337

    Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope


    Original     		PDF BLU60/12 OT-119 MDA337 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3

    2SA1841

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10


    Original     		PDF 2SA1841 2SA1841 MP-10

    MDA342

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope


    Original     		PDF BLU45/12 OT-119 MDA342

    Philips 4312 020

    Abstract: blv75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLV75/12 OT-119) Philips 4312 020 blv75

    mda324

    Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327

    resistor MR25 philips

    Abstract: resistor MR25 philips MR25 MR25 resistor MDA320 MDA315 MR25 DB4309 MR25 philips transistor D 2395
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU20/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU20/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU20/12 OT-119) resistor MR25 philips resistor MR25 philips MR25 MR25 resistor MDA320 MDA315 MR25 DB4309 MR25 philips transistor D 2395

    transistor D 2395

    Abstract: BLV45/12
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLV45/12 OT-119) transistor D 2395 BLV45/12

    BLV25

    Abstract: 702 P TRANSISTOR br 2222 npn MGP303 MGP304
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters.


    Original     		PDF BLV25 BLV25 702 P TRANSISTOR br 2222 npn MGP303 MGP304

    TRANSISTOR blw97

    Abstract: MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A,


    Original     		PDF BLW97 SC08a TRANSISTOR blw97 MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors

    SOT123 Package

    Abstract: BLV21 SOT123 L2-7 TURN transistor Common Base configuration transistor Common collector configuration TRANSISTOR W2 "beryllium oxide" 4312 020 36640 ceramic capacitor philips 561
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV21 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLV21 SC08a SOT123 Package BLV21 SOT123 L2-7 TURN transistor Common Base configuration transistor Common collector configuration TRANSISTOR W2 "beryllium oxide" 4312 020 36640 ceramic capacitor philips 561

    SOT123 Package

    Abstract: 4312 020 36640 transistor Common Base configuration Q 371 Transistor SOT123 BLV20 BR 8 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLV20 SC08a SOT123 Package 4312 020 36640 transistor Common Base configuration Q 371 Transistor SOT123 BLV20 BR 8 TRANSISTOR

    BLW50F

    Abstract: PHILIPS 4312 amplifier SOT123 Package HF power amplifier 4312 020 36640 MGP472
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLW50F SC08a BLW50F PHILIPS 4312 amplifier SOT123 Package HF power amplifier 4312 020 36640 MGP472

    4312 020 36640

    Abstract: SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power


    Original     		PDF BLW97 4312 020 36640 SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors

    W204

    Abstract: PRSS0004ZG-A MP transistor ANTISTATIC
    Text: Magazine code Magazine material W204-101-XX PVC Polyvinyl chloride Package name Renesas code Previous code MP-3A PRSS0004ZG-A TMP3 Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box


    Original     		PDF W204-101-XX PRSS0004ZG-A W204 PRSS0004ZG-A MP transistor ANTISTATIC

    Untitled

    Abstract: No abstract text available
    Text: MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. • Guaranteed Base–Emitter Voltage Matching


    Original     		PDF MC3346 MC3346

    BLV97CE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


    Original     		PDF BLV97CE OT171 BLV97CE

    BD443

    Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original     		PDF BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power


    Original     		PDF BLW96

    CA3146D

    Abstract: No abstract text available
    Text: CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. • Guaranteed Base–Emitter Voltage Matching


    Original     		PDF CA3146 CA3146 CA3146D

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212