Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR W22 Search Results

    TRANSISTOR W22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j02 527

    Abstract: S822T S822TRW S822TW marking 822
    Text: S822T/S822TW/S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 20-Jan-99 transistor j02 527 marking 822

    h11e

    Abstract: transistor j02 527 S822T
    Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 20-Jan-99 h11e transistor j02 527

    Untitled

    Abstract: No abstract text available
    Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW 34nges D-74025 20-Jan-99

    marking WS2 sot

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • •


    Original     		PDF S822T S822TW S822TRW OT-143 OT-343 2002/95/EC 2002/96/EC OT-343R OT-143 marking WS2 sot

    945 npn

    Abstract: C 945 npn S822TW 0930 IC
    Text: S822TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption


    Original     		PDF S822TW D-74025 07-Nov-97 945 npn C 945 npn S822TW 0930 IC

    TRANSISTOR w22

    Abstract: S822T S822TRW S822TW
    Text: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3


    Original     		PDF S822T S822TW S822TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R S822T OT-143 TRANSISTOR w22 S822TRW

    S822T

    Abstract: S822TRW S822TW TRANSISTOR w22
    Text: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 20-Jan-99 TRANSISTOR w22

    transistor j02 527

    Abstract: marking WS2 sot
    Text: S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • • • 4 Low supply voltage Low current consumption e3


    Original     		PDF S822T S822TW S822TRW OT-143 OT-343 2002/95/EC 2002/96/EC OT-343R OT-143 transistor j02 527 marking WS2 sot

    TRANSISTOR 85050

    Abstract: No abstract text available
    Text: S822T / S822TW / S822TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Comments SOT-143 Electrostatic sensitive device. Observe precautions for handling. 3 2 Features • • • • • 4 Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz


    Original     		PDF S822T S822TW S822TRW OT-143 OT-343 OT-343R OT-143 OT-343 TRANSISTOR 85050

    marking WS2 sot

    Abstract: S822T
    Text: S822T/S822TW/S822TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • Low supply voltage Low current consumption 50 Ω input impedance at 945 MHz Low noise figure High power gain 2 1 3 4 G2 D G1 Applications For low noise and high gain broadband amplifiers at


    Original     		PDF S822T/S822TW/S822TRW S822T S822TW S822TRW D-74025 29-Aug-03 marking WS2 sot

    Untitled

    Abstract: No abstract text available
    Text: Cat. No. W225-E1-3 SYSMAC C200H-TCjjj Temperature Control Units C200H-TCjjj Temperature Control Units Operation Manual Revised March 2000 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.


    Original     		PDF W225-E1-3 C200H-TCjjj

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    w32 transistor

    Abstract: w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33
    Text: APPLICATION NOTE 455A Group, 4559 Group Differences between 455A Group and 4559 Group 1. The Performance Overview Differences Parameter Number of basic instructions ROM type ROM size RAM size Input/Output ports D0 ~ D5 D6, D7 P00 ~ P03 P10 ~ P13 P20 ~ P23


    Original     		PDF M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33

    cmos 4553

    Abstract: ic 4553 4559 transistor p13 pin of ic 4553 4559Group w41 transistor 4553 transistor p31 P32 transistor
    Text: APPLICATION NOTE 4553 Group, 4559 Group Differences between 4553 Group and 4559 Group 1. The Performance Overview Differences Function Parameter Number of basic instructions ROM type ROM size RAM size Input/output ports D0 ~ D5 D6, D7 P00 ~ P03 LCD control circuit


    Original     		PDF 4553H 4553group REC05B0046-0100/Rev cmos 4553 ic 4553 4559 transistor p13 pin of ic 4553 4559Group w41 transistor 4553 transistor p31 P32 transistor

    D2061 transistor

    Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
    Text: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)


    Original     		PDF MD0604120A3 SA-VK650GCP SA-VK650GC/GN/GS/GCS/GCT-S, MD0604118C3] SC-VK650 SA-VK650 SB-VK650 SB-WVK650 0A072 F2G0J470A031 D2061 transistor B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064

    OMRON E5CN

    Abstract: omron zen 10c1dr-d-v1 Omron SPEED sensor 12v m16 OMRON H5CX programming manual omron zen 10c1ar-a-v1 omron TS 101 DA analogue extension modules ZEN 10C1DR-D-V1 sv 120 230 liquids dual level relay manual omron e5cs Omron H7CR Catalog
    Text: INDUSTRIAL COMPONENTS Product Selector 2004 / 2005 • Electromechanical relays • Timers • Counters • Programmable relays • Level and leakage controllers • Industrial switches • Pushbutton switches • Low voltage switch gear • Temperature controllers


    Original     		PDF

    npn transistor w16

    Abstract: transistor w16 transistor w26 npn transistor w26 npn transistor w15 w11b W16 transistor TRANSISTOR w22 w25 transistor TRANSISTOR W25
    Text: Subminiature Rectangular Inductive Prox E2S World’s Smallest Square Sensor with Built-in Amplifier H 5.5 x 5.5 mm type allows smaller, space-saving machines and devices H High response frequency 1 kHz for fast machine processes H Long sensing distance:


    Original     		PDF E2S-W11 E2S-Q11 E2S-W21 E2S-Q21 E2S-W12 E2S-Q12 E2S-W22 E2S-Q22 npn transistor w16 transistor w16 transistor w26 npn transistor w26 npn transistor w15 w11b W16 transistor TRANSISTOR w22 w25 transistor TRANSISTOR W25

    R2h DIODE

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF SEG15 P20/SEG24 REJ03B0188-0104 R2h DIODE

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BFG96

    Abstract: V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers
    Text: PhjUj^^emiconductori bbS3T31 Q031HTH 5 53 M l A P X ^ ^ ^ ^ ^ ^ ro d u c ^ p e c ific a tio n NPN 5 GHz wideband transistor £ BFG96 N AMER PHILIPS/DISCRETE DESCRIPTION b'lE I PINNING NPN transistor in a 4-lead dual-emitter plastic SO T103 envelope. DESCRIPTION


    OCR Scan     		PDF 0031H1H BFG96 OT103 BFG32. OT103. BFG96 V 904 RL 805 bfg96 scattering NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI BFG32 philips MATV amplifiers

    lc 945 p transistor

    Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184
    Text: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.


    OCR Scan     		PDF S822T/S822TW S822T S822TW 20-Jan-99 lc 945 p transistor transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184

    TELEFUNKEN EL 156

    Abstract: No abstract text available
    Text: T e m ic S822TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage


    OCR Scan     		PDF S822TW D-74025 07-Nov-97 TELEFUNKEN EL 156

    226R-1-5A1

    Abstract: No abstract text available
    Text: NAGNECR AFT CLASS 226 UP TO 7 AMPS SPST— NO DC INPUTS .670 Maxj AC OUTPUTS <170> jt JD62 Dia. {1.6 Typ.all pins LOW COST. COMPATIBLE WITH TTL GATES. PRINTED CIRCUIT AND PUSH-ON CONNECTOR VERSIONS. MOUNTS ON TO-3 TRANSISTOR HEATSINKS FOR ADDED CURRENT RATING.


    OCR Scan     		PDF E52197 LR41729 24-30AWG 226R-1-5A1 240VAC 500V0C 2500VAC 1010ii 226R-1-5A1

    M1041

    Abstract: BU103 af87 vn 530 sp etn35-030 transistor bu M20-96 BU 103
    Text: MOLD TYPE BIPOLAR TRANSISTORS •■ Dimensions K mm TO-220AB TO-220F17 TO-22QF15 # AF90-271 (AF93-281) (AF90-270) 4.5 4.5 1 4 .5 ± 0.2 2.7 ±0.2 1.3 M j" ! i *3 .2 ’ 1 2 3 1.2 1.2 2.54 2 7 1 : Baee 2 : Collector 3 : Emitter 1 : Base 2 : Collector 3 : Emitter


    OCR Scan     		PDF O-220AB O-22QF15 O-220F17 AF90-271) AF93-281) AF90-270) AF90-269) AF90-268) SD00343M) ETN31-055 M1041 BU103 af87 vn 530 sp etn35-030 transistor bu M20-96 BU 103