Untitled
Abstract: No abstract text available
Text: WEITRON WTS772 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Low speed switching TO-92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO
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Original
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WTS772
17-Jan-2014
270TYP
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PDF
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transistor marking code wts
Abstract: transistor marking code wts 15
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs
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Original
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BCR166.
BCR166/F/L3
BCR166T/W
EHA07183
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
OT323
transistor marking code wts
transistor marking code wts 15
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PDF
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transistor marking code wts
Abstract: No abstract text available
Text: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323
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Original
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OT-323
Nov-26-1996
transistor marking code wts
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PDF
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marking WTS sot23
Abstract: TRANSISTOR wts WTs transistor BCR166 wts sot23 BCR166F BCR166L3 BCR166T BCR166W SC75
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs
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Original
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BCR166.
BCR166/F/L3
BCR166T/W
EHA07183
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
OT323
marking WTS sot23
TRANSISTOR wts
WTs transistor
BCR166
wts sot23
BCR166F
BCR166L3
BCR166T
BCR166W
SC75
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PDF
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Untitled
Abstract: No abstract text available
Text: WEITRON WTS882 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Power dissipation TO-92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage
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Original
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WTS882
17-Jan-2014
270TYP
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PDF
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transistor marking code wts
Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
Text: BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings
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Original
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Q62702-C2339
OT-23
Nov-26-1996
transistor marking code wts
sot-23 WTs
sot-23 marking WTs
Q62702-C2339
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PDF
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transistor marking code wts
Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs
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Original
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BCR166.
BCR166/F/L3
BCR166T/W
EHA07183
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
OT323
transistor marking code wts
BCR108T
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
SC75
STP8
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PDF
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BCR166W
Abstract: VSO05561
Text: BCR166W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR166W
VSO05561
EHA07183
OT323
Nov-29-2001
BCR166W
VSO05561
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PDF
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VSO05561
Abstract: No abstract text available
Text: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package
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Original
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VSO05561
EHA07183
OT-323
Oct-19-1999
VSO05561
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PDF
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BCR166W
Abstract: VSO05561
Text: BCR166W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR166W
VSO05561
EHA07183
OT323
Jul-16-2001
BCR166W
VSO05561
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PDF
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BCR166
Abstract: No abstract text available
Text: BCR166 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR166
VPS05161
EHA07183
Jul-16-2001
BCR166
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PDF
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BCR166
Abstract: No abstract text available
Text: BCR166 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR166
VPS05161
EHA07183
Nov-29-2001
BCR166
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR 166 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 166 WTs Pin Configuration 1=B 2=E Package 3=C
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Original
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VPS05161
EHA07183
OT-23
Oct-19-1999
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PDF
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5n06v
Abstract: 5n06 TMOS E-FET AG3B CASE369A
Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER
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Original
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5N06V/curves
5n06v
5n06
TMOS E-FET
AG3B
CASE369A
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PDF
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|
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transistor marking code wts
Abstract: BCR108W BCR166 BCR166F BCR166W BCW66 bcr1
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W
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Original
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BCR166.
BCR166/F
BCR166W
EHA07183
BCR166
BCR166F
OT323
transistor marking code wts
BCR108W
BCR166
BCR166F
BCR166W
BCW66
bcr1
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PDF
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TLP321GB
Abstract: TLP321 TI OBH marking marking gB diode TLP3211
Text: GaAs IRED S PHOTO-TRANSISTOR T L P 3 2 1 PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA TLP321, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP321-2 offers two isolated channels in an eight lead plastic
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OCR Scan
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TLP321,
TLP321-2
TLP321-4
LP321/-2/-4
TLP321
5000Vrms
UL1577,
E67349
TLP321-4
TLP321-2
TLP321GB
TLP321
TI OBH marking
marking gB diode
TLP3211
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PDF
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transistor marking code wts
Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23
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OCR Scan
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47kfl)
Q62702-C2339
OT-23
transistor marking code wts
sot-23 marking WTs
transistor marking code wts 15
sot-23 WTs
WTs transistor
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PDF
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MARKING CODE T7s
Abstract: MARKINGCODET7s
Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E
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OCR Scan
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47kfi)
OT-323
fl235b05
623St30S
MARKING CODE T7s
MARKINGCODET7s
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PDF
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1207A
Abstract: No abstract text available
Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings
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OCR Scan
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Q62702-C2339
OT-23
BE35b05
S35b05
fi235bD5
1207A
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PDF
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QM30DY-H
Abstract: QM30DY-HB
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M30DY-HB • • • • • Ic Collector current. 30A Vcex Collector-emitter voltage. 600V hFE DC current gain. 750
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OCR Scan
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QM30DY-HB
M30DY-HB
E80276
E80271
Vcc-300V
QM30DY-H
QM30DY-HB
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PDF
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QM15TB-24
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM15TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 1 5T B -24 • lc • Vcex • hFE Collector current. 15A Collector-emitter voltage.1200V DC current gain. 75
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OCR Scan
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QM15TB-24
E80276
E80271
30LLE
QM15TB-24
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PDF
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QM75DY-24
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75
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OCR Scan
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QM75DY-24
E80276
E80271
QM75DY-24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ! Q M 50E2Y/E3Y-H • lc • • • • Collector current. 50A VCEX Collector-emitter voltage.600V hFE DC current gain. 75
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OCR Scan
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QM50E2Y/E3Y-H
50E2Y/E3Y-H
E80276
E80271
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PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation
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OCR Scan
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OT-363
Q62702-C2495
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PDF
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