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    TRANSISTOR Y2 Search Results

    TRANSISTOR Y2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Y2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    JLN 2003

    Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
    Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.


    Original     		PDF 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 2SC4226-A 2SC4226-T1 JLN 2003 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR

    ZXTC6718MCTA

    Abstract: DFN3020B-8 ZXTC6718MC marking db2 peak hold ic
    Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR Features Mechanical Data • • • • • • • • • • • NPN Transistor ƒ VCEO =20 ƒ RSAT = 47 mΩ ƒ IC = 4.5A PNP Transistor ƒ VCEO = -20V ƒ


    Original     		PDF ZXTC6718MC 150mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31927 ZXTC6718MCTA DFN3020B-8 ZXTC6718MC marking db2 peak hold ic

    ZXTC6717MC

    Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor


    Original     		PDF ZXTC6717MC 100mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31926 ZXTC6717MC marking DA1 DFN3020B-8 ZXTC6717MCTA

    MARKING 91A NPN transistor

    Abstract: MARKING 91A DFN3020B-8 ZXTC4591AMC ZXTC4591AMCTA
    Text: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data • • • • • • • • • • • • NPN Transistor ƒ VCEO = 40 ƒ RSAT = 195 mΩ ƒ IC = 2.5A PNP Transistor ƒ VCEO = -40V


    Original     		PDF ZXTC4591AMC 500mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31925 MARKING 91A NPN transistor MARKING 91A DFN3020B-8 ZXTC4591AMC ZXTC4591AMCTA

    DFN3020B-8

    Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor


    Original     		PDF ZXTC6720MC -185mV DFN3020B-8 J-STD-020 MIL-STD-202, ZXTC6719MC DS31929 DFN3020B-8 ZXTC6719MC ZXTC6720MC ZXTC6720MCTA

    DFN3020B-8

    Abstract: ZXTC6719MC ZXTC6719MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 50V • RSAT = 68 mΩ • IC = 4A PNP Transistor


    Original     		PDF ZXTC6719MC 100mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31928 DFN3020B-8 ZXTC6719MC ZXTC6719MCTA

    transistor Y2

    Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
    Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    Original     		PDF FMB3946 100mA 100MHz 100MHz 100uA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp Supersot 6

    Y22 SOT23

    Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor


    Original     		PDF PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11

    PMBTH10

    Abstract: MSB003 PMBTH81 MRA566
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost


    Original     		PDF PMBTH81 PMBTH81 PMBTH10. MSB003 PMBTH10 MSB003 MRA566

    Untitled

    Abstract: No abstract text available
    Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design


    Original     		PDF RN2130MFV RN1130MFV

    Untitled

    Abstract: No abstract text available
    Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2130MFV RN1130MFV

    RN1130MFV

    Abstract: RN2130MFV sat 1205
    Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2130MFV RN1130MFV RN1130MFV RN2130MFV sat 1205

    BC237

    Abstract: equivalent to BC177 2n6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


    Original     		PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    MBB400

    Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation


    Original     		PDF BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23

    BF180

    Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
    Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­


    OCR Scan     		PDF BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


    OCR Scan     		PDF BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9620-55

    2iy transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9628-55 SQT404 2iy transistor