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    TRANSISTOR YD Search Results

    TRANSISTOR YD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR YD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    TRANSISTOR MARKING YB

    Abstract: RN1901FE RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE
    Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •


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    PDF RN2901FE RN2906FE RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN1901FE RN1906FE TRANSISTOR MARKING YB RN1906FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE

    Untitled

    Abstract: No abstract text available
    Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • •


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    PDF RN2701JE RN2706JE RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN1701JE RN1706JE

    transistor a017

    Abstract: No abstract text available
    Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2901FE RN2906FE RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN1901FE RN1906FE transistor a017

    Untitled

    Abstract: No abstract text available
    Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE

    TRANSISTOR MARKING YB

    Abstract: RN2101FT RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
    Text: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •


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    PDF RN2101FT RN2106FT RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN1101FT 1106FT TRANSISTOR MARKING YB RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT

    Untitled

    Abstract: No abstract text available
    Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2901FE RN2906FE RN2902FE RN2903FE RN2904FE RN2905FE RN1901FE RN1906FE

    TRANSISTOR MARKING YB

    Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
    Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE TRANSISTOR MARKING YB RN1706JE RN2703JE RN2706JE

    TRANSISTOR MARKING YB

    Abstract: RN2101FT RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1101FT RN1106FT RN2102FT RN2104FT RN2105FT RN2106FT
    Text: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT TRANSISTOR MARKING YB RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1106FT RN2106FT

    TRANSISTOR MARKING YB

    Abstract: RN1101FT RN1106FT RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
    Text: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT TRANSISTOR MARKING YB RN1106FT RN2103FT RN2106FT

    RN1901FE

    Abstract: RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE TRANSISTOR MARKING YB
    Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    PDF RN2901FE RN2906FE RN2902FE RN2903FE RN2904FE RN2905FE RN1901FE RN1906FE RN1906FE RN2903FE RN2906FE TRANSISTOR MARKING YB

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2SC288A

    Abstract: 2SC288A 5.B
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC288A 5-B UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D ISK MOLD" DESCRIPTION PACKAGE DIMENSIONS The 2 S C 2 8 8 A I5 B ) is an NPN silicon epitaxial transistor intended fo r use in m illim e te r s (inch es)


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    PDF 2SC288A 1300MHz 400MHz 600MHz 2SC288A 5.B

    buk638-500

    Abstract: buk638
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a iastic envelope. REDFET with fast recovery


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    PDF BUK638-500B BUK638-500B buk638-500 buk638

    diode T-71

    Abstract: BUK657-400B
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


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    PDF BUK657-400B T0220AB BUK657-400B diode T-71

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery


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    PDF BUK637-400B BUK637-400B

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


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    PDF BUK583-60A OT223 BUK583-60A OT223.

    t416

    Abstract: 817 CN
    Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE


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    PDF PDTC114YE PDTC114YE 5002/00/03/pp8 t416 817 CN

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK582-60A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


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    PDF BUK582-60A OT223 BUK582-60A OT223.

    programmable unijunction transistor

    Abstract: "Programmable Unijunction Transistor" ph a5 transistor
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor


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    PDF BRY61 BRY61 MGL167 115002/00/03/pp8 programmable unijunction transistor "Programmable Unijunction Transistor" ph a5 transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PMST2369 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING


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    PDF PMST2369 T2369 MAM062 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PMSS3906 PNP switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 Jun 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor PMSS3906 FEATURES PINNING


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    PDF PMSS3906 SC-70; OT323 PMSS3904. PMSS3906 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING


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    PDF MPSA14 MPSA14 MPSA64. 115002/00/04/pp8