MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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TRANSISTOR MARKING YB
Abstract: RN1901FE RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE
Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •
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RN2901FE
RN2906FE
RN2901FE,
RN2902FE,
RN2903FE
RN2904FE,
RN2905FE,
RN1901FE
RN1906FE
TRANSISTOR MARKING YB
RN1906FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN2906FE
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Untitled
Abstract: No abstract text available
Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • •
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RN2701JE
RN2706JE
RN2701JE,
RN2702JE,
RN2703JE
RN2704JE,
RN2705JE,
RN1701JE
RN1706JE
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transistor a017
Abstract: No abstract text available
Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2901FE
RN2906FE
RN2901FE,
RN2902FE,
RN2903FE
RN2904FE,
RN2905FE,
RN1901FE
RN1906FE
transistor a017
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Untitled
Abstract: No abstract text available
Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2701JE
RN2706JE
RN2702JE
RN2703JE
RN2704JE
RN2705JE
RN1701JE
RN1706JE
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TRANSISTOR MARKING YB
Abstract: RN2101FT RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Text: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •
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RN2101FT
RN2106FT
RN2101FT,
RN2102FT,
RN2103FT
RN2104FT,
RN2105FT,
RN1101FT
1106FT
TRANSISTOR MARKING YB
RN2102FT
RN2103FT
RN2104FT
RN2105FT
RN2106FT
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Untitled
Abstract: No abstract text available
Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2901FE
RN2906FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN1901FE
RN1906FE
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TRANSISTOR MARKING YB
Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Text: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2701JE
RN2706JE
RN2702JE
RN2703JE
RN2704JE
RN2705JE
RN1701JE
RN1706JE
TRANSISTOR MARKING YB
RN1706JE
RN2703JE
RN2706JE
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TRANSISTOR MARKING YB
Abstract: RN2101FT RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1101FT RN1106FT RN2102FT RN2104FT RN2105FT RN2106FT
Text: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2101FT
RN2106FT
RN2102FT
RN2103FT
RN2104FT
RN2105FT
RN1101FT
RN1106FT
TRANSISTOR MARKING YB
RN2103FT
TOSHIBA Transistor Silicon PNP Epitaxial Type
RN1106FT
RN2106FT
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TRANSISTOR MARKING YB
Abstract: RN1101FT RN1106FT RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Text: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2101FT
RN2106FT
RN2102FT
RN2103FT
RN2104FT
RN2105FT
RN1101FT
RN1106FT
TRANSISTOR MARKING YB
RN1106FT
RN2103FT
RN2106FT
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RN1901FE
Abstract: RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE TRANSISTOR MARKING YB
Text: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN2901FE
RN2906FE
RN2902FE
RN2903FE
RN2904FE
RN2905FE
RN1901FE
RN1906FE
RN1906FE
RN2903FE
RN2906FE
TRANSISTOR MARKING YB
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2SC288A
Abstract: 2SC288A 5.B
Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC288A 5-B UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D ISK MOLD" DESCRIPTION PACKAGE DIMENSIONS The 2 S C 2 8 8 A I5 B ) is an NPN silicon epitaxial transistor intended fo r use in m illim e te r s (inch es)
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2SC288A
1300MHz
400MHz
600MHz
2SC288A 5.B
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buk638-500
Abstract: buk638
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a iastic envelope. REDFET with fast recovery
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BUK638-500B
BUK638-500B
buk638-500
buk638
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diode T-71
Abstract: BUK657-400B
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK657-400B
T0220AB
BUK657-400B
diode T-71
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery
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BUK637-400B
BUK637-400B
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK583-60A
OT223
BUK583-60A
OT223.
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t416
Abstract: 817 CN
Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE
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PDTC114YE
PDTC114YE
5002/00/03/pp8
t416
817 CN
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK582-60A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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BUK582-60A
OT223
BUK582-60A
OT223.
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programmable unijunction transistor
Abstract: "Programmable Unijunction Transistor" ph a5 transistor
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor
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BRY61
BRY61
MGL167
115002/00/03/pp8
programmable unijunction transistor
"Programmable Unijunction Transistor"
ph a5 transistor
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PMST2369 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING
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PMST2369
T2369
MAM062
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PMSS3906 PNP switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 Jun 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor PMSS3906 FEATURES PINNING
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PMSS3906
SC-70;
OT323
PMSS3904.
PMSS3906
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING
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MPSA14
MPSA14
MPSA64.
115002/00/04/pp8
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