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    TRANSISTOR YK Search Results

    TRANSISTOR YK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR YK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    RN1910FE

    Abstract: RN1911FE RN2910FE RN2911FE transistor marking YK 6 pin
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE RN1910FE RN1911FE RN2911FE transistor marking YK 6 pin

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    RN1910FE

    Abstract: RN1911FE RN2910FE RN2911FE transistor marking YK ic marking YK
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE, RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN2910FE, RN1910FE, RN1911FE RN2910FE RN1910FE RN1911FE RN2911FE transistor marking YK ic marking YK

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE, RN1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE 1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE 1711JE

    RN1110FT

    Abstract: RN1111FT RN2110FT RN2111FT
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT, RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN2110FT, RN1110FT, RN1111FT RN2110FT RN1110FT RN1110FT RN1111FT RN2111FT

    RN1710JE

    Abstract: RN2710JE RN2711JE transistor marking YK 6 pin 1711JE
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE 1711JE RN2710JE RN2711JE transistor marking YK 6 pin 1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    Untitled

    Abstract: No abstract text available
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN1110FT, RN1111FT

    RN1710JE

    Abstract: RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE RN1710JE RN1711JE RN2711JE transistor marking YK 6 pin

    Untitled

    Abstract: No abstract text available
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN1110FT, RN1111FT

    Untitled

    Abstract: No abstract text available
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN1110FT, RN1111FT

    transistor marking YK 6 pin

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE transistor marking YK 6 pin

    ic marking YK

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE ic marking YK

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    RN1110FT

    Abstract: RN1111FT RN2110FT RN2111FT
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN1110FT, RN1111FT RN1110FT RN1111FT RN2111FT

    BLW84

    Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith­


    OCR Scan     		PDF bbS3S31 BLW84 59-j54 OT-123. 7Z77529 7Z77S30 BLW84 transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6

    transistor 1gs

    Abstract: T0-220AB BUK455-60A
    Text: Phittps Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK455-60A/B BUK455 T0220AB transistor 1gs T0-220AB BUK455-60A

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF