TRANSISTOR Z3 Search Results

TRANSISTOR Z3 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR Z3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
BFQ234/I Abstract: BFQ234 BFQ254 Text: Philips Semiconductors Product specification - T Z33-05 NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION BFQ234; BFQ234/I D ShE ' PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and	OCR Scan	OT172 OT172A3 BFQ234 OT172A1 BFQ234/I ---t-33-05 BFQ234; BFQ234/I 7110fleb BFQ254	PDF
buz350 Abstract: No abstract text available Text: U AUER PHILIPS/DISCRETE PowerMOS transistor OLE D • fabS3131 0014753 7 ■ BU Z350 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	fabS3131 T0218AA; 001475L BUZ350 T-39-13 00147SS buz350	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • tbS3T31 00147T4 1 BU Z385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor	OCR Scan	tbS3T31 00147T4 Fig25Â BUZ385 T-39-13 bb53TBl	PDF
t600c Abstract: MC 139 transistor BUZ32 T0220AB MC139 K158 Text: N AMER PHILIPS/DISCRETE DbE D _ • PowerMOS transistor ^53131 00m451_M ■ BU Z32 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,	OCR Scan	bbS3131 QGm451 BUZ32 T0220AB; bb53ci31 BUZ32 T-39-11 7z2119? t600c MC 139 transistor T0220AB MC139 K158	PDF
S100 NPN Transistor Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503 Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF	OCR Scan	fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503	PDF
Transistor BFR 35 Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91 Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package	OCR Scan	fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 35 Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91	PDF
Transistor BFR 97 Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79 Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package	OCR Scan	fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflDSlSÎOilLiSiriRiOiDtgi BDY90P NPN SILICON POWER TRANSISTOR . NPN TRANSISTOR • LOW COLLECTOR EMITTER SATURATION VOLTAGE . FAST-SWITCHING SPEED APPLICATION i GENERAL PURPOSE SWITCHING APPLICATIONS ■ GENERAL PURPOSE AMPLIFIERS i DC CURRENT AND BATTERY OPERATED	OCR Scan	BDY90P T0-220	PDF
Motorola 680 Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822/D Motorola 680 Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9	PDF
Motorola transistor 358 Abstract: Case 449-02 Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822T1 MRF9822T1/D Motorola transistor 358 Case 449-02	PDF
MCE021 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 02 2002 Sep 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 PINNING - SOT538A FEATURES • Easy power control	Original	M3D438 BLF2043 SCA74 613524/05/pp12 MCE021	PDF

PNP TRANSISTOR SOT666 Abstract: PEMB3 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open	Original	M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PNP TRANSISTOR SOT666 PEMB3	PDF
transistor SMD Z2 Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9 transistor SMD Z2 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1	PDF
MGU487 Abstract: 200B BLA1011-2 NV SMD TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Jun 17 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain	Original	M3D438 BLA1011-2 OT538A SCA74 613524/04/pp8 MGU487 200B BLA1011-2 NV SMD TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: Central CZT2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and	OCR Scan	CZT2222A CZT2222A OT-223 150mA,	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	OCR Scan	MRF9822T1/D MRF9822T1 MRF9822/D	PDF
transistor smd z9 Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E transistor smd z9 transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 JESD22-C101A CRCW12064R75F100 vishay 1206	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
transistor smd z9 Abstract: Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco AGR18045E JESD22-C101A 600F8R2CT250 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E AGR18045EF AGR18045EU AGR21045F transistor smd z9 Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco JESD22-C101A 600F8R2CT250	PDF
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53131 BUZ310 T0218AA; T-39-11 bbS3T31 T-39-H	PDF

TRANSISTOR Z3 Search Results

TRANSISTOR Z3 Result Highlights (5)

TRANSISTOR Z3 Datasheets Context Search

MN1280

oz960

BFQ234/I

buz350

Untitled

t600c

S100 NPN Transistor

Transistor BFR 35

Transistor BFR 97

Untitled

Motorola 680

Untitled

Motorola transistor 358

MCE021

PNP TRANSISTOR SOT666

transistor SMD Z2

MGU487

Untitled

Untitled

transistor smd z9

transistor equivalent table 557

transistor smd z9

"RF Power Transistor"

Untitled