TRANSISTOR Z9 Search Results

TRANSISTOR Z9 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR Z9 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
CBVK741B019 Abstract: F63TNR FDD603AL FDD6680 Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This	Original	FDD603AL CBVK741B019 F63TNR FDD603AL FDD6680	PDF
transistor smd z9 Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E transistor smd z9 transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 JESD22-C101A CRCW12064R75F100 vishay 1206	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
transistor smd z9 Abstract: Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco AGR18045E JESD22-C101A 600F8R2CT250 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E AGR18045EF AGR18045EU AGR21045F transistor smd z9 Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco JESD22-C101A 600F8R2CT250	PDF
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557	PDF
XC9128 Abstract: XC9129 LTF5022T-4R7N2R0 XC9128B45 MSOP10-1 200PWM Text: XC9128/XC9129 Series ETR0411-010a 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2 TYP. N-channel driver transistor and a	Original	XC9128/XC9129 ETR0411-010a XC9128 XC9129 LTF5022T-4R7N2R0 XC9128B45 MSOP10-1 200PWM	PDF
Untitled Abstract: No abstract text available Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19125E Hz--1990 AGR19125EU AGR19125EF	PDF
Step-Up Abstract: No abstract text available Text: XC9128/XC9129 Series ETR0411-011 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a	Original	XC9128/XC9129 ETR0411-011 Step-Up	PDF
LTF5022-4R7-LC Abstract: XC9128B45 ltf5022 LTF5022-LC AEN 6 XC9128 CDRH4D28C-4R7N LTF5022T-4R7N2R0 LMK212BJ106KG MSOP-10 Text: XC9128/XC9129 Series ETR0411-009 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a	Original	XC9128/XC9129 ETR0411-009 LTF5022-4R7-LC XC9128B45 ltf5022 LTF5022-LC AEN 6 XC9128 CDRH4D28C-4R7N LTF5022T-4R7N2R0 LMK212BJ106KG MSOP-10	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3	PDF
J293 Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A	PDF
ltf5022 Abstract: LTF5022-4R7-LC AEN 6 LMK212BJ106KG xc9128 MSOP-10 USP-10B XC9129 XBS30 MSOP10-1 Text: XC9128/XC9129 Series ETR0411-010 1A Driver Transistor Built-In, Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9128/XC9129 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a	Original	XC9128/XC9129 ETR0411-010 ltf5022 LTF5022-4R7-LC AEN 6 LMK212BJ106KG xc9128 MSOP-10 USP-10B XC9129 XBS30 MSOP10-1	PDF
100B100JW500X Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25 Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 IS-95) 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A 1961-25	PDF

Z25 transistor Abstract: Z27 transistor Text: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.	Original	MHT1001H MHT1001HR5 Z25 transistor Z27 transistor	PDF
Step-Up Abstract: XC9131 Text: XC9131 Series ETR0412-010 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9131 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2Ω(TYP.)	Original	XC9131 ETR0412-010 Step-Up	PDF
AGR19045XF Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19045EF Hz--1990 AGR19045XF	PDF
XC9136E50CDR-G Abstract: XC9136N 4606 IC circuit diagram JMK212ABJ106KG marking CDF 2065V XC9135M JMK212ABJ106 XC9136E Text: XC9135/XC9136 Series ETR0416-001b 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9135/XC9136 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2	Original	XC9135/XC9136 ETR0416-001b XC9136E50CDR-G XC9136N 4606 IC circuit diagram JMK212ABJ106KG marking CDF 2065V XC9135M JMK212ABJ106 XC9136E	PDF
XC9131F05 Abstract: LTF5022-LC XC9131F LMK212BJ-106KG XC9131 4020-2R VLS252012 XC9131H05C vlcf4020 LMK212BJ106KG Text: XC9131 Series ETR0412-008 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9131 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2Ω(TYP.)	Original	XC9131 ETR0412-008 33load XC9131F05 LTF5022-LC XC9131F LMK212BJ-106KG 4020-2R VLS252012 XC9131H05C vlcf4020 LMK212BJ106KG	PDF
XC9135 Abstract: XC9136 Text: XC9135/XC9136 Series ETR0416-001a 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9135/XC9136 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2	Original	XC9135/XC9136 ETR0416-001a XC9135 XC9136	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386 Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386	PDF
GRM55DR61H106KA88B Abstract: No abstract text available Text: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.	Original	MHT1000H MHT1000HR5 GRM55DR61H106KA88B	PDF
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727	PDF
motorola 269-5 Abstract: z627 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 1 0 25-1 150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 150 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR	OCR Scan	MRF10500 MRF10150 motorola 269-5 z627	PDF

Privacy Settings

TRANSISTOR Z9 Search Results

TRANSISTOR Z9 Result Highlights (5)

TRANSISTOR Z9 Datasheets Context Search

oz960

CBVK741B019

transistor smd z9

transistor equivalent table 557

transistor smd z9

"RF Power Transistor"

XC9128

Untitled

Step-Up

LTF5022-4R7-LC

Untitled

J293

ltf5022

100B100JW500X

Z25 transistor

Step-Up

AGR19045XF

XC9136E50CDR-G

XC9131F05

XC9135

J307 FET

GRM55DR61H106KA88B

BD135

motorola 269-5