TRANSISTOR ZO 107 Search Results

TRANSISTOR ZO 107 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR ZO 107 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ATF-10736 Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05 Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t	Original	ATF-10236 ATF-10736 AN-G005 ATF10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05	PDF
ATF10236 Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686 Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t	Original	ATF-10236 frequen058 5963-3780E 5966-0166E ATF10236 FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686	PDF
BCs 43 TRANSISTOR Abstract: transistor zo 107 AT-32063 4046 IC opt 1027 8 pin ic 3844 for 5 volts Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry	Original	AT-32063 5989-2645EN AV02-1456EN BCs 43 TRANSISTOR transistor zo 107 AT-32063 4046 IC opt 1027 8 pin ic 3844 for 5 volts	PDF
AT-32063 Abstract: AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70 Text: Agilent AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of	Original	AT-32063 5965-8921E 5989-2645EN AT-32063 AT-32063-BLK AT-32063-TR1 8 pin ic 3844 for 5 volts AT-32063-TR1G marking 624 sc-70	PDF
transistor zo 107 Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor	PDF
AT-32063 Abstract: No abstract text available Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry	Original	AT-32063 5989-2645EN AV02-1456EN AT-32063	PDF
BCs 43 TRANSISTOR Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.	Original	AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-8921E 5989-2645EN BCs 43 TRANSISTOR AT-32063-BLK AT-32063-TR1	PDF
8 pin ic 3844 for 5 volts Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107	PDF
transistor zo 607 Abstract: ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS	Original	2SC4570 transistor zo 607 ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN	PDF
AN-1072 Abstract: GTLP16612 AN-1072 national Text: Fairchild Semiconductor Application Note 1072 Peter LaFlamme February 1998 INTRODUCTION GTLP device technology was invented by Fairchild Semiconductor as a high speed backplane interface solution. It has reduced output swing Note 1 and patented output circuitry	Original		PDF
data sheet 702 TRANSISTOR npn Abstract: 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571 Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS	Original	2SC4571 data sheet 702 TRANSISTOR npn 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571	PDF
transistor 3506 nec Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter Text: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter	PDF
AN-1072 Abstract: GTLP16612 AN-1072 national Text: Fairchild Application Note 1072 Peter LaFlamme February 1997 INTRODUCTION GTLP device technology was invented by National Semiconductor as a high speed backplane interface solution. It has reduced output swing Note 1 and patented output circuitry to address one of the most prevalent problems with high	Original		PDF
zo 103 ma Abstract: ic 7556 IC 555 2SC4261 513 s12 datasheet ic 804 RF POWER TRANSISTOR NPN RF transistors with s-parameters transistor 1238 transistor RF S-parameters Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION •Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage	Original	2SC4261 ELECTRI682 zo 103 ma ic 7556 IC 555 2SC4261 513 s12 datasheet ic 804 RF POWER TRANSISTOR NPN RF transistors with s-parameters transistor 1238 transistor RF S-parameters	PDF

transistor zo 107 Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor	PDF
transistor zo 107 Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor	PDF
c 5929 transistor Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299 Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299	PDF
ZO 109 Abstract: zo 107 2SC5247 Hitachi DSA0014 Text: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector	Original	2SC5247 ZO 109 zo 107 2SC5247 Hitachi DSA0014	PDF
transistor s11 s12 s21 s22 Abstract: UPA802T 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 NE681 transistor j50 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T UPA802T-T1 24-Hour transistor s11 s12 s21 s22 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 transistor j50	PDF
2SC5246 Abstract: Hitachi DSA0014 ZO 103 ZO 189 transistor Text: 2SC5246 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.6 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector	Original	2SC5246 2SC5246 Hitachi DSA0014 ZO 103 ZO 189 transistor	PDF
transistor zo 607 Abstract: zo 607 zo 607 MA zo 107 ZO 109 2SC4995 equivalent ZO 607 transistor zo 109 ZO 103 Text: 2SC4995 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CMPAK–4 Features 4 • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter	Original	2SC4995 transistor zo 607 zo 607 zo 607 MA zo 107 ZO 109 2SC4995 equivalent ZO 607 transistor zo 109 ZO 103	PDF
TRANSISTOR nf 842 Abstract: D 843 Transistor transistor su 312 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:	OCR Scan	NE856 100mA UPA801T UPA801T UPA801T-T1 24-Hour TRANSISTOR nf 842 D 843 Transistor transistor su 312	PDF
zo 103 ma Abstract: No abstract text available Text: HITACHI 2SC5246-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 12 GHz typ. • High gain, low noise figure P G = 16.5 dB typ., NF = 1.6 dB typ. at f = 900 MHz * 1. Emitter	OCR Scan	2SC5246------Silicon ap-171 2SC5246 zo 103 ma	PDF
transistor 2sc 973 Abstract: TRANSISTOR 2SC 733 Text: HITACHI 2SC5247-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-j- = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 9 0 0 MHz 1. Emitter	OCR Scan	2SC5247------Silicon 2SC5247 transistor 2sc 973 TRANSISTOR 2SC 733	PDF

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TRANSISTOR ZO 107 Search Results

TRANSISTOR ZO 107 Result Highlights (5)

TRANSISTOR ZO 107 Datasheets Context Search

ATF-10736

ATF10236

BCs 43 TRANSISTOR

AT-32063

transistor zo 107

AT-32063

BCs 43 TRANSISTOR

8 pin ic 3844 for 5 volts

transistor zo 607

AN-1072

data sheet 702 TRANSISTOR npn

transistor 3506 nec

AN-1072

zo 103 ma

transistor zo 107

transistor zo 107

c 5929 transistor

ZO 109

transistor s11 s12 s21 s22

2SC5246

transistor zo 607

TRANSISTOR nf 842

zo 103 ma

transistor 2sc 973