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    TRANSISTOR ZS 35 Search Results

    TRANSISTOR ZS 35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ZS 35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7415 ic pin details

    Abstract: C10535E NE52118 NE52118-T1
    Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω


    Original     		PDF NE52118 NE52118-T1 7415 ic pin details C10535E NE52118 NE52118-T1

    C10535E

    Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
    Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω


    Original     		PDF NE52318 OT-343 NE52318-T1 C10535E NE52318 NE52318-T1 NPN transistor 9418 26364

    NPN pnp MATCHED PAIRS array

    Abstract: LA 4451
    Text: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors [ /Title HFA3 134, HFA31 35 /Subject (Ultra High Frequency Matche d Pair Transistors) /Autho r () /Keywords (Intersil Corporation, semiconductor, two, transistor array,


    Original     		PDF HFA3134, HFA3135 HFA31 HFA3134 HFA3135 NPN pnp MATCHED PAIRS array LA 4451

    j358

    Abstract: No abstract text available
    Text: T1G4003532-FS 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FS T1G4003532-FS j358

    transistor BC 945

    Abstract: TRANSISTOR BC 413 b BC 945 transistor SGA-9289
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-9289 is a high performance amplifier designed for operation from DC to 3500 MHz. With optimal matching at 2GHz, TOI=41.5dBm and P1dB=28.6dBm. This RF device uses the latest Silicon Germanium


    Original     		PDF SGA-9289 SGA-9289 DC-3500 EDS-101498 transistor BC 945 TRANSISTOR BC 413 b BC 945 transistor

    transistor BC 945

    Abstract: BC 945 transistor sga-9189
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3500 MHz. With optimal matching at 2 GHz, TOI=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium


    Original     		PDF SGA-9189 SGA-9189 DC-3500 EDS-101497 transistor BC 945 BC 945 transistor

    vishay rf output power transistor

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
    Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G4003532-FL T1G4003532-FL vishay rf output power transistor tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100

    2gma

    Abstract: Q62702-F938 121-996
    Text: BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-23 Q62702-F938 S21/S12| Dec-12-1996 2gma Q62702-F938 121-996

    Untitled

    Abstract: No abstract text available
    Text: BFR 35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP


    Original     		PDF VPS05161 OT-23 Oct-13-1999

    1090mhz

    Abstract: JESD22-A114 PRA1000
    Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit


    Original     		PDF 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 PRA1000 52-j1 1090mhz JESD22-A114

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G3000532-SM T1G3000532-SM 30MHz

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T1G3000532-SM T1G3000532-SM 30MHz

    Untitled

    Abstract: No abstract text available
    Text: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF TGF3015-SM TGF3015-SM

    Untitled

    Abstract: No abstract text available
    Text: BFR 35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking


    Original     		PDF VPS05161 OT-23 900MHz Nov-30-2000

    Untitled

    Abstract: No abstract text available
    Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings


    OCR Scan     		PDF MPSA65 MMBTA65 PZTA65 MPSA64 MPSA65 MMBTA65

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 142 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, diver circuit >Built in bias resistor R i= 22kiî, R 2=47ki! TT n r Pin Configuration B C R 142 W Zs 1 =B II CO Q62702-C2259 Package o Marking Ordering Code


    OCR Scan     		PDF Q62702-C2259 OT-23 0235b05 D12D7Hb Q120747

    WF VQE 22 c

    Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
    Text: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E


    OCR Scan     		PDF G014b3k CA3118, CA3146, CA3183 CA3118AT, CA3146AE, CA3183AE, WF VQE 22 c CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE

    transistor D 2394

    Abstract: 2SD2576
    Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.


    OCR Scan     		PDF 2SD2167 2SD2394 2SD2576 2SD2167 -----2SD2576 cb--60V 94L-1098-0348) transistor D 2394 2SD2576

    RCA-CA3086

    Abstract: RCA CA3086 CA3086 RCA-CA3018 ICAN-5296 "rca application note" CA3086F I426 HTU8 CA3086 APPLICATION NOTE
    Text: G E SOLID STATE DI m r ia y o • ■- D E | 3075001 D014t.l0 5 | ■ - - - - CA3086 — — —'■ ■■■— 'T'-H'S-ZS General-Purpose N-P-N Transistor Array T h re e Isolated T ran sisto rs and O ne D iffe re n tia lly C onnected T ran sisto r Pair


    OCR Scan     		PDF D014tlD CA3086 120MHz 120-MHz ICAN-5296 RCA-CA3018 RCA-CA3086 I4260fij 92CS-t42Mfii RCA CA3086 ICAN-5296 "rca application note" CA3086F I426 HTU8 CA3086 APPLICATION NOTE

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC Tñ DeJ t.*4S?S2S OOITIBT 3 'T^m*iS,' ZS /¿ P A I 4 3 6 H PNP SILICON LOW DESCRIPTION E P I T A X I A L . . P OWER TRANSISTOR . ARRAY SPEED' SWITCHING DARLINGTON > The ¡i PA1436H is an array of four dariington power tra n sisto rs. I t is


    OCR Scan     		PDF uPA1436H ODITI42

    THJU401

    Abstract: THJJ300B
    Text: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss


    OCR Scan     		PDF THJBC264A THJBC264B THJBC264C THJBC264D THJBF244A THJBF244B THJBF244C THJBF246A THJBF246B THJBF246C THJU401 THJJ300B

    Untitled

    Abstract: No abstract text available
    Text: 3GE P • 7^537 Q031SQ3 0 ■ 'T'-'ZS- 1 S C S -T H O M S O N ^ r a @ i p O T o ) 3D(gi 2 N 4014 S G S-THOMSON HIGH-VOLTAGE, HIGH CURRENT SWITCH DESC RIPTIO N The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current


    OCR Scan     		PDF Q031SQ3 2N4014 7T2TS37 DQ31SQb

    Untitled

    Abstract: No abstract text available
    Text: _8 3 6 8 6 0 2 S O L I T R Q N D E V I C E S SOLITRON DEVICES INC _ 95 D 02821 D T-JT-ZS' ~T5 » e | fl3t,flbD5 DGGaaai fl I NC E > fô @ E Q j) g F VER Y HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER D e v ic e s - ln c - N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR*


    OCR Scan     		PDF 051mm)

    Untitled

    Abstract: No abstract text available
    Text: A L LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 0 S 0 M 3 3 Ô 0 0 0 3 S Ö 2 5 ■ AL 6R 93 D 0 3 5 8 2 'b'T-Z.^ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C


    OCR Scan     		PDF THJBC264A THJBC264B THJBC264C THJBC264D THJBF244A THJBF244B THJBF244C THJBF246A THJBF246B THJBF246C