Untitled
Abstract: No abstract text available
Text: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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SGR15N40L
SGU15N40L
SGU15N40L
SGU15N40LTU
O-251
AN-9006:
AN-9006
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SGR15N40L
Abstract: SGU15N40L transistor* igbt 70A 300 V
Text: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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SGR15N40L
SGU15N40L
SGU15N40L
transistor* igbt 70A 300 V
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IGBT cross-reference
Abstract: TO252-DPAK transistors cross reference list
Text: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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SGR15N40L
SGU15N40L
SGR15N40LTF
O-252
SGR15N40LTM
AN-9006:
IGBT cross-reference
TO252-DPAK
transistors cross reference list
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Untitled
Abstract: No abstract text available
Text: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAF50
O-204AA/AE)
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IRFAF50
Abstract: No abstract text available
Text: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAF50
O-204AA/AE)
par252-7105
IRFAF50
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STP4119
Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices
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SG388/D
May-2007
STP4119
Full-bridge SG3525 APPLICATION NOTES
sg3525 application note
mc34063 step up with mosfet
mc34063 step down with mosfet
Full-bridge SG3525
sg3525 pwm INVERTER
MJ2955 300 watts amplifier circuit diagram
MT3336
sg3535a
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2N6284 inverter schematic diagram
Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital
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SG388/D
2N6284 inverter schematic diagram
NTD18N06
MKP9V160
sine wave inverter tl494 circuit diagram
ECL IC NAND
adp3121
DARLINGTON TRANSISTOR ARRAY
ezairo
MC74HC4538
TIP142 6403 F
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Untitled
Abstract: No abstract text available
Text: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for
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FGS15N40L
FGS15N40LTF
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ic70a
Abstract: FGS15N40L
Text: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for
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FGS15N40L
ic70a
FGS15N40L
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Untitled
Abstract: No abstract text available
Text: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for
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FGS15N40L
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SGR15N40L
Abstract: SGU15N40L transistor* igbt 70A 300 V 70a 3
Text: IGBT SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for strobe
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SGR15N40L
SGU15N40L
SGU15N40L
transistor* igbt 70A 300 V
70a 3
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Untitled
Abstract: No abstract text available
Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International
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90330F
IRF450
JANTX2N6770
JANTXV2N6770
O-204AA/AE)
temper252-7105
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Untitled
Abstract: No abstract text available
Text: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International
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PD-90330G
O-204AA/AE)
IRF450
JANTX2N6770
JANTXV2N6770
IRF450
--TO-204AA
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JANTX2N6770
Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International
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90330F
IRF450
JANTX2N6770
JANTXV2N6770
O-204AA/AE)
stabil52-7105
JANTX2N6770
irf4501
mosfet IRF450
IRF450
JANTXV2N6770
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international rectifier
Abstract: IRFM260 4.5v to 100v input regulator
Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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91388C
O-254AA)
IRFM260
O-254AA.
MIL-PRF-19500
international rectifier
IRFM260
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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91388C
O-254AA)
IRFM260
O-254AA.
MIL-PRF-19500
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IRFMA450
Abstract: No abstract text available
Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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IRFMA450
O-254AA)
O-254AA.
MIL-PRF-19500
IRFMA450
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Untitled
Abstract: No abstract text available
Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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IRFMA450
O-254AA)
O-254AA.
MIL-PRF-19500
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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QJ50
Abstract: TRANSISTOR MOSFET K 1249 IRFI064 LS51 BYL3
Text: Data Sheet No. PD-9.876 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI064 N-CHANNEL Product Summary 60 Volt, 0.017 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFI064
irf10b4d
irfi064u
O-259
MIL-S-19500
QJ50
TRANSISTOR MOSFET K 1249
IRFI064
LS51
BYL3
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1X04
Abstract: TRANSISTOR MOSFET K 1249 IRFI064
Text: Data Sheet No. PD-9.876 INTERNATIONAL RECTIFIER TOR AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFIQ64 a] N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power M O SFET transistors.
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IRFI064
ihfi064d
irfi064u
O-259
MIL-S-19500
1X04
TRANSISTOR MOSFET K 1249
IRFI064
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transistor 1451 sd
Abstract: IRFV064
Text: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I$R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRPV064 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary Part Number The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.
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IRFV064
IRFV064D
IRFV064U
O-258
MIL-S-19500
I-454
transistor 1451 sd
IRFV064
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