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    TRANSISTORS B857 Search Results

    TRANSISTORS B857 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS B857 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B857

    Abstract: a968 TRANSISTORS B857 B-857 A940 b857 to-220 2sb85 A-968
    Text: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) @Tc=25°c ^CBO V CEO V EBO (V) Min (V) Min (V) Min 2N6107 80 70 5 40 2N6109 60 50 5 40 'c (A) 'cBO ^CB ^CES V CE (HA) Max


    OCR Scan     		PDF O-220 2N6107 2SB856C 2SB857C 2SB858 B857 a968 TRANSISTORS B857 B-857 A940 b857 to-220 2sb85 A-968

    2SC144

    Abstract: 2SD466 2sc5266
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    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266