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    TRANSISTORS BC 182 Search Results

    TRANSISTORS BC 182 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BC 182 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC183

    Abstract: BC182 BC182A BC184 BC182B BC184 pin out transistors BC 183
    Text: MOTOROLA Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 182 BC 183 BC 184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage


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    BC182/D BC182 BC183 BC184 BC182/D* BC183 BC182A BC184 BC182B BC184 pin out transistors BC 183 PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    transistors BC 183

    Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200


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    CB-76 transistors BC 183 TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A PDF

    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


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    Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp PDF

    BC 247

    Abstract: BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182
    Text: SIE D SIEMENS • fl2 3 SbüS GDM],S24 n i HSIEG S I E M EN S A K T I E N G E S E L L S C H A F NPN Silicon AF Transistors BC 182 BC 183 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 212, BC 213 PNP Type BC


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    fl23Sbà GDmS24 Q62702-C455 Q62702-C372 Q62702-C373 Q62702-C833 Q62702-C388 Q62702-C387 Q62702-C524 fl235bOS BC 247 BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182 PDF

    BC183A

    Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
    Text: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B


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    CB-76 BC317P. BC183A BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B PDF

    l22e

    Abstract: BC213 BC212 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B
    Text: SIE D • SIEM ENS flE35b05 0D4153E Obfl M S I E 6 SI EM EN S A K T I E N G E S E L L S C H A F " P 2 ñ 'Z - l PNP Silicon AF Transistors BC212 BC 213 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 182, BC 183 NPN


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    flE35b05 0D4153E BC212 Q62702-C242 Q62702-C374-V1 Q62702-C374-V2 Q62702-C564 Q62702-C1159 Q62702-C1160 Q62702-C1158 l22e BC213 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B PDF

    BC238

    Abstract: bc177-vi bc140 1012C 026 pnp
    Text: AF transistors Type Group A B BC 108 A B C B C BC 140 uCBO f j I q and 45 45 300 300 10 10 2 2 5 5 < 10 <10 20 20 20 300 300 300 10 10 10 110-220 200-450 110-220 200-450 420-800 2 2 2 5 5 5 20 20 300 300 10 10 200-450 420-800 2 2 5 5 £10 £10 £ 10 £4 £4


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    bfx 34

    Abstract: BCY79 BSX38 BSX45 BSX46 BSS23
    Text: AF transistors Type Group A B BC 108 A B C B C BC 140 u CBO f j at MHz V 45 45 at I q and mA 300 300 10 10 2 2 5 5 < 10 <10 20 20 20 300 300 300 10 10 10 110-220 200-450 110-220 200-450 420-800 2 2 2 5 5 5 20 20 300 300 10 10 200-450 420-800 2 2 5 5 £10 £10


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    PDF

    CT bc182

    Abstract: bc212l BC182
    Text: CRO D E S C R IP T IO N The B C 182, B ' i 82L (N PN & B C 212, BC 212L (PN P) are complementary silicon planar epitaxial transistors for use in AF small signal am plifiers and drivers, as w ell as for low power universal applications. Both types feature good linearity o f DC current gain.


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    BC182 BC182L BC212 BC212L BCT82. 10ChnA 200Hz CT bc182 bc212l PDF

    BC182

    Abstract: bc183 bc184 transistors BC 183
    Text: BC182rA,B BC183 BC184 M AXIM UM RATINGS Rating S ym bol BC BC BC 182 1 83 184 U nit C o llecto r-E m itte r Voltage VCEO 50 30 30 Vdc C ollector-Base Voltage VCBO 60 45 45 Vdc E m itter-Base Voltage vebo 6 .0 Vdc C ollector C urrent - C ontinuous 'C 100 mAdc


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    BC182rA BC183 BC184 O-226AA) BC237 fC183 BC184 BC182A BC182B BC182 transistors BC 183 PDF

    BC182

    Abstract: BC183 BC184 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3
    Text: BC182,A,B BC183 BC184 M A X IM U M RA TIN G S S ym b o l R a tin g BC BC BC 182 183 184 U n it C ollector-E m itter Voltage VCEO 50 30 30 Vdc Collector-Base Voltage VCBO 60 45 45 Vdc Em itter-Base Voltage Vebo 6.0 Vdc C ollector Current - Continuous ic 100


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    BC183 BC184 O-226AA) BC182 BC183 BC184 BC182A BC182 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3 PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 PDF

    BC 641

    Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
    Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76


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    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor PDF

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 PDF

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


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    OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551 PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


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    O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF

    BC5471

    Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
    Text: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N


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    BC1671 BC1681 BC1821 BC2121 BC2371 BC2381 BC2391 BC2571 BC2581 BC2591 BC5471 BC547E BC 548 NPN relay 876 N 2C S BC5461 BC516 548 BC550 bc4151 TLC 5491 PDF

    BTO18

    Abstract: sc 107 b BC190B BC190 BC140 BC 241 bo 139 BC107 2N3708 2N3707
    Text: Silicon NPN transistors, general purpose continued Tamb = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76 Page


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    BC140 BTO18 sc 107 b BC190B BC190 BC 241 bo 139 BC107 2N3708 2N3707 PDF

    bc184 ra

    Abstract: cbc182 BC182 BC182A BC182B BC183 BC184 BC184 pin out
    Text: MOTOROLA Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA A m p lifie r T r a n s is t o r s B C 1 8 2 ,A ,B B C 183 B C 184 NPN Silicon COLLECTOR 1 MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 182 BC 183 BC 184 Unit VCEO 50


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    BC182/D BC182 BC183 BC184 O-226AA) bc184 ra cbc182 BC182A BC182B BC184 pin out PDF