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    TRANSISTORS BF 517 Search Results

    TRANSISTORS BF 517 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BF 517 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 PDF

    to92c

    Abstract: MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N
    Text: Selection Guide For complete information and data sheets please contact us on our internet homepage Leaded Components Varactor Diodes leaded Type Characteristics (TA = 25 °C) Maximum Ratings VR IF CT


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    de/semiconductor/products/35/35 O-92a O-92b O-92d to92c MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N PDF

    transistors BC 639 029

    Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
    Text: Selection Guide Diodes leaded For complete information and data sheets please refer to our Data Book I and II, Small Signal Semiconductor Edition 03.92. RF-Schottky Diodes for Professional Applications Type Frequency Band GHz Maximum Ratings Characteristics (TA = 25 °C)


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    O-92d transistors BC 639 029 BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337 PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    BF 256

    Abstract: BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56
    Text: ¿si 1 asc t> m aaastos ooq44?g s bisieû v T^-zhJS’ N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 04470 BF 256 A BF 256 B ' ~o-BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package


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    00Q447G Q68000-A5168 Q62702-F413 Q68000-A5169 Q62702-F733 BF 256 BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56 PDF

    transistor 2SC930

    Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
    Text: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106


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    O-72J O-106 O-72G -26UNF-2A O-48D transistor 2SC930 mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60 PDF

    A5169

    Abstract: BF256 BF256C BF 256 BF256B BF256A
    Text: asc D • fl235bG5 GÜ0MM7Ü 5 H S I E 6 N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF .04470 ' "d " T-Z/-JS’ BF 256 A BF 256 B BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF applications.


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    fl235bG5 8000-A Q62702-F413 68000-A5169 Q62702-F733 23SbOS QGQ4472 A5169 BF256 BF256C BF 256 BF256B BF256A PDF

    BF256

    Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
    Text: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.


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    023SbOS BF246B BF246C Q62702-F219 Q62702-F393 Q62702-F254 Q62702-F250 127mm BF256A BF2S68 BF256 BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C PDF

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 PDF

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor PDF

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor PDF

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310 PDF

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635 PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


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    O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: II N AUER PHILIPS/DISCRETE 2SE D U bb53T31 □□1^737 3 • I J BDT42F; 42AF; BDT42BF; 42CF T-33-/7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BDT41F, BDT41AF, BDT41BF, and BDT41CF.


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    bb53T31 BDT42F; BDT42BF; T-33-/7 OT186 BDT41F, BDT41AF, BDT41BF, BDT41CF. BDT42F PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    PDF

    SOT323-6

    Abstract: BF772W
    Text: Transistoren Transistors Hochlinearer Abwärtsmischer Ultralinear Down Converter Maximum Ratings Type Package Characteristics 7"A = 25 °C; VD * 5 V 1224 M H z , / Lo = 1185 MHz ,fF= 39 MHz, PLQ = 5 dBm / RF = T CMY 200 Và V P<„ dBm I<j Gc Ip3in mA dB


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    BF772W BF775A OT-23 OT-23 OT-323 OT-323 OT-143 SOT323-6 PDF

    BF772W

    Abstract: sot-23 CODE BF 550 SOT143 BF799W HF-transistoren
    Text: Transistoren Transistors Hochlinearer Abwärtsm ischer Ultralinear Down Converter Type CMY 200 Maximum Ratings Package Characteristics TA = 25 °C; VD - 5 V / rF = 1224 MH z , / lo = 1185 MHz.yip = 39 MHz, PLQ = 5 dBm Vä V Pm dBm /d Gc ^P3in mA dB dB 6


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    OT-323 OT-143 BF772W OT-343 OT-23 BF799W sot-23 CODE BF 550 SOT143 HF-transistoren PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    PDF

    TRANSISTOR T 410

    Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
    Text: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect


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    fl235bOS Q68000-A5440 Q68000-A5172 Q68000-A5173 Q68000-A5174 Q68000-A5175 BF410B Vbs-10V 0G04MÃ BF410D TRANSISTOR T 410 abf410 DSG52 922S BF410D 410c BF410A BF410C PDF

    7z32

    Abstract: bu 517 BDT41AF BDT41BF BDT41CF BDT41F BDT42BF BDT42F 7Z329
    Text: N AMER PHILIPS/ D I S C R E T E 2SE il m D ^53^31 GQn?37 3 • BDT42F; 42AF; BDT42BF; 42CF - 3 3 - / 7 T SILICON EPITAXIAL POW ER TRA N SISTO R S PNP silicon epitaxial power transistors, each in a S O T 1 8 6 envelope with an electrically insulated mounting base.


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    BDT42F; BDT42BF; T-33-/7 OT186 BDT41F, BDT41AF, BDT41BF, BDT41CF. bdt42f 7z32 bu 517 BDT41AF BDT41BF BDT41CF BDT41F BDT42BF 7Z329 PDF