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    TRANSISTORS FOR OSCILLATORS Search Results

    TRANSISTORS FOR OSCILLATORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS FOR OSCILLATORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD transistors

    Abstract: msa42 smd-transistor DATA BOOK MSA444 RF Power Modules msa4 smd-transistor code book MSA422 "RF Power Modules" transistor smd code 404
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones General • Acceptance tests on finished products to verify


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    PDF MBB439 SMD transistors msa42 smd-transistor DATA BOOK MSA444 RF Power Modules msa4 smd-transistor code book MSA422 "RF Power Modules" transistor smd code 404

    TRANSISTOR SMD MARKING CODE NM

    Abstract: thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF General • Acceptance tests on finished products to verify conformance with the device specification. The test


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    PDF SC08b MLB049 TRANSISTOR SMD MARKING CODE NM thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor

    ZTX653 equivalent

    Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
    Text: SELECTION GUIDE Discrete semiconductors Bipolar transistors | Diodes | MOSFETs Discrete semiconductors Bipolar transistors Zetex Semiconductors provides product designers with a broad range of discrete semiconductor components renowned for their quality, high performance and optimized


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    PDF 2002/95/EC) ZTX653 equivalent ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    n3904

    Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
    Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in


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    PDF mpsh17 mpsh10 bf374 bf375 bf959 mps918 n3904 2n3903 2n4400 mps2369 CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    transistors for uhf oscillators

    Abstract: MMBT2369LT1 sot-23 Marking 3D MMBTH69 transistors for oscillators uhf
    Text: SOT-23 TRANSISTORS continued Switching Transistors The following tables are a listing of devices intended for high-speed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance.


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    PDF OT-23 MMBT2369LT1 BSV52LT1 MMBT3640LT1 intendeH10LT1 MMBT918LT1 MMBTH24LT1 MMBTH81LT1 MMBTH69LT1 MMBT404ALT1 transistors for uhf oscillators sot-23 Marking 3D MMBTH69 transistors for oscillators uhf

    2N3866 MOTOROLA

    Abstract: 2N2857 MOTOROLA MOTOROLA 2N5179 2N2857 MRF2369 2N5179 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA
    Text: RF SMALL-SIGNAL TRANSISTORS continued UHF and Microwave Oscillators The transistors listed below are for U H F and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power.


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    PDF 2N5179 2N2857 2N3839 MM8009 2N5108 2N3866 2N5829 2N5031 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 MRF2369 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    BC847BLT1

    Abstract: BC847CLT1 bc846blt1 2W3A 1AM marking
    Text: SOT-23 Devices Maximum die size 31 mil x 34 mil CASE 318-07 Bipolar Transistors General-Purpose Transistors The following tables are a listing of small-signal general-purpose transistors in the S O T-23 surface mount packages. These devices are intended for small-signal amplification for DC, audio, and lower RF frequencies. They also have applications as


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    PDF OT-23 MMBT8099LT1 BC846ALT1 BC846BLT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 BCB47ALT1 BC847BLT1 BC847CLT1 2W3A 1AM marking

    40348

    Abstract: 27e transistor
    Text: Power Transistors File Number HARRIS 40347 , 40348 88 SEMICOND SECTOR 27 E D 43Ü2271 Silicon N-P-N Medium- and High-Voltage Transistors OOeOCm 7 • TERMINAL DESIGNATIONS HA S T-3 3 - 0 5 G eneral-P u rp ose Transistors for Industrial and C o m m ercial Equipm ent


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    PDF 92CS-27S12 40348 27e transistor

    2N2405

    Abstract: 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF 2N3571 2N3572 2N2102 2N4036 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92

    ZTX454

    Abstract: No abstract text available
    Text: NPN Silicon Planar Medium Power Transistors ZTX454 ZTX455 DESCRIPTION These are plastic encapsulated, general purpose transistors deigned for small and medium signal amplification from d.c. to radio frequencies. Application areas include: audio frequency amplifiers, drivers and output stages,


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    PDF ZTX454 ZTX455 300fiS.

    ZTX454

    Abstract: ZTX455 ferranti Scans-00107852 Ferranti Semiconductors
    Text: FERRANTI i semiœnductors ZTX454 ZTX455 NPN Silicon Planar M edium Power Transistors DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Application areas include: Audio Frequency Amplifiers, Drivers


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    PDF ZTX454 ZTX455 ZTX454 150mA 200mA 100MHz ZTX455 ferranti Scans-00107852 Ferranti Semiconductors

    2N2708

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, lo w and medium pow er am plification from D.C. to radio frequencies in Commercial,


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    PDF 2N3571 2N3572 2N2102 2N4036 2N2708 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    2N2270

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A BFY50 2N2270 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    TRANSISTOR BC140

    Abstract: applications of Transistor BC108 BC558C bc140 TRANSISTOR BC308B 2N2102 2N2605 2N4036 BC141 BC161
    Text: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF ZT211 BC558B BC558C BC559B BC559C BCY72 BC308A BC308B BC308C BC309B TRANSISTOR BC140 applications of Transistor BC108 bc140 TRANSISTOR 2N2102 2N2605 2N4036 BC141 BC161

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BCY59 BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92

    bc140

    Abstract: ZT Ferranti 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF 2N3866 2N4427 2N2102 2N4036 bc140 ZT Ferranti 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88

    2TX552

    Abstract: SE82
    Text: PNP Silicon Planar Medium Power Transistors ZTX552 ZTX553 FEATURES • • • High power dissipation: 1W at Tamb= 2 5 °C hFE specified up to 1A High fT: 200MHz typical DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and


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    PDF ZTX552 ZTX553 200MHz 100MHz 2TX552 SE82

    2N2102

    Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 bc107
    Text: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BCY79 BCY59 BCY71 ZT181 BC160 BC140 BCY78 T0-18 BCY58 BCY72 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 bc107

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V

    bc140

    Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BC160 BFY50 2N1613 2N1711 ZT211 BCY65E BCY77 2N2270 ZT210 bc140 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91