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    TRANSISTORS HAVING 0.9 OR 0.8 VOLTAGE GAIN Search Results

    TRANSISTORS HAVING 0.9 OR 0.8 VOLTAGE GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS HAVING 0.9 OR 0.8 VOLTAGE GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30g 123

    Abstract: TRANSISTOR C-111 ISL55012 ISL55013 ISL55013IEZ-T7 ISL55014 ISL55015
    Text: ISL55013 ESIGNS NEW D R O F D PART E MMEND PLACEMENT O C E R E DR N OT MENDE L55014 Data Sheet R E C OM IS February 13, 2007 FN6283.0 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55013 is a high performance gain block featuring a Darlington configuration using high fT transistors and


    Original     		PDF ISL55013 ISL5501 FN6283 ISL55013 ISL55012 ISL55015 ISL55014 31dBm 30g 123 TRANSISTOR C-111 ISL55013IEZ-T7

    EIAJSC-70

    Abstract: ISL55012 ISL55013 ISL55014 ISL55014IEZ-T7 ISL55015 MO-203-AB
    Text: ISL55014 Data Sheet February 13, 2007 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55014 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55014 ISL55014 ISL55012 ISL55015 ISL55013 FN6259 30dBm EIAJSC-70 ISL55014IEZ-T7 MO-203-AB

    30g 123

    Abstract: ISL55012 ISL55013 ISL55013IEZ-T7 ISL55014 ISL55015 ISL550
    Text: ISL55013 Data Sheet February 13, 2007 FN6283.0 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55013 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55013 FN6283 ISL55013 ISL55012 ISL55015 ISL55014 31dBm 30g 123 ISL55013IEZ-T7 ISL550

    TRANSISTOR C-111

    Abstract: ISL55005 ISL55007 ISL55008 ISL55009 ISL55010 ISL55011 ISL55011IEZ-T7
    Text: ISL55011 Data Sheet May 22, 2006 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an


    Original     		PDF ISL55011 ISL55005, ISL55007, ISL55008 ISL55009, ISL55010, ISL55011 TRANSISTOR C-111 ISL55005 ISL55007 ISL55009 ISL55010 ISL55011IEZ-T7

    Untitled

    Abstract: No abstract text available
    Text: ISL55014 Data Sheet February 13, 2007 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55014 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55014 ISL55014 ISL55012 ISL55015 ISL55013 FN6259 30dBm

    MARKING 186 SC70-6

    Abstract: TRANSISTOR C-111 ISL55005 ISL55007 ISL55008 ISL55008IEZ-T7 ISL55009 ISL55010 ISL55011
    Text: ISL55008 Data Sheet May 22, 2006 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an


    Original     		PDF ISL55008 ISL55005, ISL55007, ISL55008 ISL55009, ISL55010, ISL55011 MARKING 186 SC70-6 TRANSISTOR C-111 ISL55005 ISL55007 ISL55008IEZ-T7 ISL55009 ISL55010

    Untitled

    Abstract: No abstract text available
    Text: ISL55012 Data Sheet August 25, 2010 FN6258.2 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55012 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55012 FN6258 ISL55012 ISL55015 ISL55013 ISL55014 30dBm ISL55012IEZ-T7 SC-70ription

    TRANSISTOR C-111

    Abstract: ISL55012 ISL55012IEZ-T7 ISL55013 ISL55014 ISL55015 TB347 MO-203-AB
    Text: ISL55012 Data Sheet August 25, 2010 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55012 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55012 ISL55012 ISL55015 ISL55013 ISL55014 FN6258 30dBm ISL55012IEZ-T7 TRANSISTOR C-111 ISL55012IEZ-T7 TB347 MO-203-AB

    TRANSISTOR C-111

    Abstract: TRANSISTOR C-111 M 5G intersil PART MARKING wifi amplifier C-111 MO203AB wifi 2.4 ghz ISL55012 ISL55012IEZ-T7 ISL55013
    Text: ISL55012 Data Sheet August 20, 2007 FN6258.1 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55012 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55012 FN6258 ISL55012 ISL55015 ISL55013 ISL55014 30dBm ISL55012IEZ-T7 SC-70 TRANSISTOR C-111 TRANSISTOR C-111 M 5G intersil PART MARKING wifi amplifier C-111 MO203AB wifi 2.4 ghz ISL55012IEZ-T7

    ISL55012

    Abstract: ISL55013 ISL55014 ISL55015 ISL55015IEZ-T7
    Text: ISL55015 Data Sheet December 13, 2006 FN6284.0 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55015 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55015 FN6284 ISL55015 ISL55012 ISL55013 ISL55014 31dBm ISL55015IEZ-T7

    ISL55012

    Abstract: ISL55012IEZ-T7 ISL55013 ISL55014 ISL55015
    Text: ISL55012 Data Sheet December 6, 2006 FN6258.0 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55012 is a high performance gain block featuring a Darlington configuration using high fT transistors and excellent thermal performance. They are an ideal choice for


    Original     		PDF ISL55012 FN6258 ISL55012 ISL55015 ISL55013 ISL55014 30dBm ISL55012IEZ-T7

    Untitled

    Abstract: No abstract text available
    Text: VCA2617 SBOS326 −AUGUST 2005 Dual, Variable Gain Amplifier FEATURES DESCRIPTION D INDEPENDENT CHANNEL CONTROLS: The VCA2617 is a dual-channel, continuously variable, voltage-controlled gain amplifier well-suited for a variety of ultrasound systems as well as applications in proximity


    Original     		PDF VCA2617 SBOS326 VCA2617 52mW/Channel 50MHz 53dBc

    ISL55007IEZ

    Abstract: TRANSISTOR C-111 ISL55005 ISL55007 ISL55007IEZ-T7 ISL55008 ISL55009 ISL55010 ISL55011
    Text: ISL55007 Data Sheet May 22, 2006 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an


    Original     		PDF ISL55007 ISL55005, ISL55007, ISL55008 ISL55009, ISL55010, ISL55011 ISL55007IEZ TRANSISTOR C-111 ISL55005 ISL55007 ISL55007IEZ-T7 ISL55009 ISL55010

    TRANSISTOR C-111

    Abstract: ISL55005 ISL55005IEZ-T7 ISL55007 ISL55008 ISL55009 ISL55010 ISL55011
    Text: ISL55005 Data Sheet May 22, 2006 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an


    Original     		PDF ISL55005 ISL55005, ISL55007, ISL55008 ISL55009, ISL55010, ISL55011 TRANSISTOR C-111 ISL55005 ISL55005IEZ-T7 ISL55007 ISL55009 ISL55010

    TRANSISTOR C-111

    Abstract: ISL55005 ISL55007 ISL55008 ISL55009 ISL55009IEZ-T7 ISL55010 ISL55011
    Text: ISL55009 Data Sheet May 22, 2006 MMIC Silicon Bipolar Broadband Amplifier Features The ISL55005, ISL55007, ISL55008 and ISL55009, ISL55010, ISL55011 constitute a family of high performance gain blocks featuring a Darlington configuration using high ft transistors and excellent thermal performance. They are an


    Original     		PDF ISL55009 ISL55005, ISL55007, ISL55008 ISL55009, ISL55010, ISL55011 TRANSISTOR C-111 ISL55005 ISL55007 ISL55009 ISL55009IEZ-T7 ISL55010

    DR marking

    Abstract: 2SD1866 2SD2143 2SD2212 T100
    Text: 2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 zExternal dimensions (Unit : mm) 2SD2212 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Built-in zener diode between collector and base.


    Original     		PDF 2SD2212 2SD2143 2SD1866 2SD2212 SC-62 DR marking 2SD1866 T100

    40841

    Abstract: 40841 MOSFET 3096A CA3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 40841 MOSFET 3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE

    40841

    Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
    Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C 40841 40841 MOSFET CA3096AE CA3096 CA3096AM CA3096AM96 CA3096CE CA3096E

    function of 74LS04 IC

    Abstract: 74LS04 MDC3105LT1 74HC04 ap aromat 5v 6 pin relay datasheet ic 74LS04 ttl 74ls04 power dissipation Aromat relays NOT gate 74LS04 quad 74HC04 NOT GATE datasheet
    Text: MOTOROLA Order this document by MDC3105LT1/D SEMICONDUCTOR TECHNICAL DATA Integrated Relay/ MDC3105LT1 Inductive Load Driver • Provides a Robust Driver Interface between D.C. Relay Coil and Sensitive Logic Circuits • Optimized to Switch Relays from a 3 V to 5 V Rail


    Original     		PDF MDC3105LT1/D MDC3105LT1 function of 74LS04 IC 74LS04 MDC3105LT1 74HC04 ap aromat 5v 6 pin relay datasheet ic 74LS04 ttl 74ls04 power dissipation Aromat relays NOT gate 74LS04 quad 74HC04 NOT GATE datasheet

    EL5106

    Abstract: EL5106IS EL5106IS-T13 EL5106IS-T7 EL5106IW-T7 EL5108 EL5306 EL5306IS EL5308
    Text: EL5106, EL5306 Data Sheet November 18, 2003 350MHz Fixed Gain Amplifiers with Enable Features The EL5106 and EL5306 are fixed gain amplifiers with a bandwidth of 350MHz. This makes these amplifiers ideal for today’s high speed video and monitor applications.


    Original     		PDF EL5106, EL5306 350MHz EL5106 EL5306 350MHz. FN7357 EL5106IS EL5106IS-T13 EL5106IS-T7 EL5106IW-T7 EL5108 EL5306IS EL5308

    Untitled

    Abstract: No abstract text available
    Text: EL5106, EL5306 Data Sheet October 14, 2003 350MHz Fixed Gain Amplifiers with Enable Features The EL5106 and EL5306 are fixed gain amplifiers with a bandwidth of 350MHz. This makes these amplifiers ideal for today’s high speed video and monitor applications.


    Original     		PDF EL5106, EL5306 FN7357 350MHz EL5106 EL5306 350MHz.

    SN74HC cross reference

    Abstract: sn74lvc EB192E SN74HC logic family TEXAS INSTRUMENTS SN7400 SERIES SN7407 PC equivalent SN74xx245 sn74abt SN74S40 SN74
    Text: EB192E What a designer should know EB192E WHAT A DESIGNER SHOULD KNOW Author: Eilhard Haseloff Date: 11.01.94 Rev.: A 1 Application Lab EB192E What a designer should know During the development of systems using integrated circuits, the engineer is frequently confronted with questions which are only partially - if at all - answered by


    Original     		PDF EB192E SN74HC cross reference sn74lvc EB192E SN74HC logic family TEXAS INSTRUMENTS SN7400 SERIES SN7407 PC equivalent SN74xx245 sn74abt SN74S40 SN74

    40841

    Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


    OCR Scan     		PDF r88uct RFA120 mu24 dc SWT-2