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    TRANSISTORS K 903 Search Results

    TRANSISTORS K 903 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS K 903 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistors K 903

    Abstract: PDTA144ES PDTA114ES PDTA124ES PDTC114ES PDTC124ES "Small-signal Transistors Selection" PDTA114TS PDTA143ES PDTC114TS
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN RESISTOR-EQUIPPED TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IO max. (mA) Ptot max. (mW) hFE min. hFE max. INPUT RES. (KΩ) RES. RATIO PNP COMPL. PAGE >30 10


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    PDF PDTA114ES PDTC114ES PDTC114TS PDTA114TS PDTC124ES PDTA124ES PDTC143ES PDTA143ES PDTC144ES PDTA144ES Transistors K 903 PDTA144ES PDTA114ES PDTA124ES PDTC114ES PDTC124ES "Small-signal Transistors Selection" PDTA114TS PDTA143ES PDTC114TS

    IRFF9110

    Abstract: No abstract text available
    Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    PDF O-205AF) IRFF9110 -100V switchin252-7105 IRFF9110

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    Abstract: No abstract text available
    Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    PDF O-205AF) IRFF9110 -100V

    IRFF9210

    Abstract: 097A
    Text: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    PDF O-205AF) IRFF9210 -200V as252-7105 IRFF9210 097A

    Untitled

    Abstract: No abstract text available
    Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International


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    PDF 90336F IRF430 JANTX2N6762 JANTXV2N6762 O-204AA/AE) MIL-PRF-19500/542] p252-7105

    IRF4401

    Abstract: IRF440
    Text: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    PDF IRF440 O-204AA/AE) parame252-7105 IRF4401 IRF440

    IRF430

    Abstract: JANTX2N6762 JANTXV2N6762
    Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International


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    PDF 90336F IRF430 JANTX2N6762 JANTXV2N6762 O-204AA/AE) MIL-PRF-19500/542] an52-7105 IRF430 JANTX2N6762 JANTXV2N6762

    IRF130

    Abstract: JANTX2N6756 JANTXV2N6756
    Text: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International


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    PDF 90333F IRF130 JANTX2N6756 JANTXV2N6756 O-204AA/AE) MIL-PRF-19500/542] and252-7105 IRF130 JANTX2N6756 JANTXV2N6756

    IRF330

    Abstract: JANTX2N6760 JANTXV2N6760
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


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    PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] an52-7105 IRF330 JANTX2N6760 JANTXV2N6760

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    Abstract: No abstract text available
    Text: PD - 90339F IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International


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    PDF 90339F IRF350 JANTX2N6768 JANTXV2N6768 MIL-PRF-19500/543] O-204AA/AE)

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    Abstract: No abstract text available
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


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    PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) temper252-7105

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    Abstract: No abstract text available
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


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    PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] p252-7105

    JANTX2N6770

    Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


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    PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) stabil52-7105 JANTX2N6770 irf4501 mosfet IRF450 IRF450 JANTXV2N6770

    Untitled

    Abstract: No abstract text available
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


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    PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] p252-7105

    IRF140

    Abstract: irf140 ir IRF1401
    Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    PDF IRF140 O-204AA/AE) param252-7105 IRF140 irf140 ir IRF1401

    2SK2136

    Abstract: No abstract text available
    Text: MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 6 , 2 S K 2 1 3 6 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2136, 2SK2136-Z are N -channel Power MOS Field Effect Transistors designed fo r h ig h vo lta g e sw itch in g applications.


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    PDF 2SK2136, 2SK2136-Z 2SK2136-Z IEI-1209) 2136-Z 2SK2136

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    TIP27

    Abstract: 190n0 2N1384 2N866 2N907 transistor BD400 BD109 BD109-16 1743-0810 1843-3705
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C MAX. 1 hFE ! MIN NlAXl tae


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    bu 1350

    Abstract: BU 508 transistor power flyback bu508
    Text: JJ-E M G CORP Û1 m DE|D[ gTMEb 7 | J - J 2 - Ó / Horizontal Deflection Transistors T E LEFU N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet) hermetic package and in the high voltage epoxy package. Our basic


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    to-220 weight

    Abstract: "high voltage linear regulator" bu508a bu508 BU908 s630t DIN 41872 JEDEC TO-220
    Text: TELEFUNKEN ELECTRONIC_61C D • 6 3 5 0 0 ^ 0005bMM 3 M A L 6 G J - £ 2 - O J Horizontal Deflection Transistors T EL E F U N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet hermetic package and in the high voltage epoxy package. Our basic


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    PDF 0005bMM to-220 weight "high voltage linear regulator" bu508a bu508 BU908 s630t DIN 41872 JEDEC TO-220

    2SD2436

    Abstract: 2SC4969 2SB1584 2sd2433 2sb1582 2sb1583 2sd2434 2SC4971 2sc4973 2sd2432
    Text: T Mini 3-pin Package IW f é Outline Transistors, Diodes s T S - a a O S m / 'C y 'f r - S / 't t . ? & |M > 3 il}:F 5 - S !i:ifc '< . a e.cc u — K a u t i J i t f i i t t i t £ / * • : / * r - y - e t c n - j f y - y 0) f f * Art) .7mmt » < , * » 0 5 f 5 lW b l= lllttt' t l i t o


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    PDF machine71 2SC4972 2SC4974 2SC4975 2SC4973 MA152A MA1U152A MA1U152K MA152K MA1U152WA 2SD2436 2SC4969 2SB1584 2sd2433 2sb1582 2sb1583 2sd2434 2SC4971 2sc4973 2sd2432

    K 2645 transistor

    Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W


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    PDF 0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645