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    TRANSISTORS L17 Search Results

    TRANSISTORS L17 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS L17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP113

    Abstract: BLF2022-90 BLF2022S-90 MBL105
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF2022-90; BLF2022S-90 UHF power LDMOS transistors Product specification Supersedes data of 2003 June 13 2003 Sep 30 Philips Semiconductors Product specification UHF power LDMOS transistors BLF2022-90; BLF2022S-90


    Original     		PDF M3D379 M3D461 BLF2022-90; BLF2022S-90 SCA75 R77/05/pp13 GP113 BLF2022-90 BLF2022S-90 MBL105

    transistor MAR 826

    Abstract: A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J
    Text: APPLICATION NOTE A Wideband hybrid coupled amplifier 470 − 860 MHz with 2 balanced transistors BLV57 NCO8101 Philips Semiconductors A Wideband hybrid coupled amplifier (470 − 860 MHz) with 2 balanced transistors BLV57 CONTENTS 1 ABSTRACT 2 INTRODUCTION


    Original     		PDF BLV57 NCO8101 SCA57 transistor MAR 826 A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J

    Philips 4312 020

    Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
    Text: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network


    Original     		PDF BLV25 AN98031 BLV25 BLW86 SCA57 Philips 4312 020 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier

    2322-211

    Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
    Text: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57


    Original     		PDF BLV57 NCO8205 BLV57 SCA57 2322-211 Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz

    PM7520

    Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
    Text: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION


    Original     		PDF BLW32 BLW33 ECO7806 PM7520 RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25

    RESISTOR CR25 philips

    Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
    Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION


    Original     		PDF BLV33F ECO8005 SCA57 RESISTOR CR25 philips philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS

    hp778d

    Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
    Text: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION


    Original     		PDF BLV33 ECO7904 SCA57 hp778d pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    2SC3624

    Abstract: No abstract text available
    Text: NEC / EIECTMM DEVICE SILICON TRANSISTORS / 2SC3624,2SC3624A AUDIO FREQUENCY AM PLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2A ¿ 0-2 _ 0.65 l&U 1.5 B • High DC C u rrent Gain : hp£ = 1000 to 3200


    OCR Scan     		PDF 2SC3624 2SC3624A

    2SC3624

    Abstract: e3 Marking
    Text: SILICON TRANSISTORS 2SC3624, 2SC3624A AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2 .8 ± 0-2 -1.5 -8 0.65 Î Î U • H igh DC C u rre n t Gain : h Fg = 1000 to 320 0


    OCR Scan     		PDF 2SC3624, 2SC3624A 2SC3624 C3624A 2SC3624 e3 Marking

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A

    2SC4181

    Abstract: 2SC41 2SC4181A
    Text: DATA SHEET NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC4181,2SC4181A AUDIO FREQUENCY AMPLIFIER,SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES • High DC Current Gain : hjrE = 1 0 0 0 to 3 2 0 0 • Low V c E s a t : v CE(sat) = 0 .0 7 V T Y P . •


    OCR Scan     		PDF 2SC4181 2SC4181A 2SC41 2SC4181A

    D1302

    Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N APIER PHILIPS/DISCRETE L IE bbS3^31 0037756 445 « A P X BFX84 BFX85 D J I SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q UICK R E F E R E N C E D A T A BFX84 BFX85 v CBO max.


    OCR Scan     		PDF BFX84 BFX85 Q0E7773 M040C

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029

    SA2713

    Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea SA2713 MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / ELECTRON DEVICE _ / SILICON TRANSISTORS / 2 S C 4 1 8 1 ,2 S C 4 1 8 1 A AUDIO FREQUENCY AMPLI FIER .SW ITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 + 0.1 • High DC C u rrent Gain : hpg = 1 000 to 3 200


    OCR Scan     		PDF 2SC4181 2SC4181A 2SC4181A)

    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF

    P1027

    Abstract: 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V P1027 2N3379 P1069E SD5011 UC-41 2N4088 K1502 RN1030 1203 6d ML111B

    2SK19GR

    Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V 2SK19GR X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001

    A642 transistor pnp

    Abstract: D1302 transistor D1303 d1302 transistor A641 NPN transistor FT57 D1103 D1303 FM1111 A642 transistor to 92
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V A642 transistor pnp D1302 transistor D1303 d1302 transistor A641 NPN transistor FT57 D1103 D1303 FM1111 A642 transistor to 92

    4181A

    Abstract: No abstract text available
    Text: SILICON TRANSISTORS 2SC4181,2SC4181 A AUDIO FREQUENCY AMPLIFIER,SW ITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATU RES P A C K A G E D IM ENSIONS in millimeters • High DC C u rrent Gain : hpg “ 1 0 0 0 to 3 200 • L o w V c e is a tl : V c E ls a tl = 0 07 V TYP.


    OCR Scan     		PDF 2SC4181 2SC4181 4181A

    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


    OCR Scan     		PDF

    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06