Mpsa42
Abstract: mpsa 102
Text: SIEMENS NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: MPSA 92 MPSA 93 PNP Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configur ation
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Q68000-A413
Q68000-A4809
42/4J
235b05
Mpsa42
mpsa 102
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Q62702F1240
Abstract: f 840 h marking NC
Text: SIEMENS NPN Silicon RF Transistors BF 840 BF 841 • Suitable for com m on emitter R F, IF amplifiers • Low collector-base capacitance due to contact shield diffusion • Low output conductance Type Marking Ordering Code PinC 'onfigu •ation 1 2 3 Package1
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Q62702-F1240
62702-F1287
Q62702F1240
f 840 h
marking NC
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transistor BC 236
Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
Text: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation
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BC635
15A3DIN
transistor BC 236
bc 106 transistor
transistors marking HK
transistor C 639 W
transistors BC 23
bc 569
A27 637
transistor BC 639
A27 639
marking code transistor HK
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PDF
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S763T
Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
Text: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm
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000543Q
569-GS
S763T
JY marking transistor
TRANSISTOR SOT-23 marking JE
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TRANSISTOR MARKING YB 1L
Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738
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2SC4841
OT89/SC62)
TRANSISTOR MARKING YB 1L
2SK 2SA 2SC equivalent
ON 4497 HF transistor
1B01F
transistor 2sc 1586
i203 transistor
transistor 2sk power amp
transistor bc 2sk
transistor 2sk 70
TBC846
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTD133HKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.
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CHDTD133HKPT
SC-59/SOT-346)
SC-59/SOT-346
100OC
-40OC
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Zener diode smd marking S4
Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Text: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.
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R1407,
R1401,
Zener diode smd marking S4
DIAC DB2
melf ZENER diode COLOR BAND
gps 1575R
melf ZENER diode COLOR CODE
LTWC455E
zener smd marking 931
1575R
SR360* EQUIVALENT
Tuning Fork Crystal 40khz
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage
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2SD1006
100mA
500mA
-10mA
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32A9
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UNR32A9
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05
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UNR32A9
UNR32A9
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ic 556 datasheet
Abstract: sot-23 Marking M1F MMBT5550LT1 MMBT5551LT1 WMBT5551LT1 mmbt5550
Text: WMBT5551LT1 COLLECTOR 3 NPN Silicon Transistor 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 160 Vdc Collector – Emitter Voltage VCEO Collector – Base Voltage VCBO 180 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous
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WMBT5551LT1
236AB)
ic 556 datasheet
sot-23 Marking M1F
MMBT5550LT1
MMBT5551LT1
WMBT5551LT1
mmbt5550
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR52A9G Silicon NPN epitaxial planar type For digital circuits • Features Package Costs can be reduced through downsizing of the equipment and reduction of
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2002/95/EC)
UNR52A9G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Features Package Optimum for high-density mounting and downsizing of the equipment
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Original
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2002/95/EC)
UNR92A9G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32A9
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PDF
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UNR92A9G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Package Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
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Original
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2002/95/EC)
UNR92A9G
UNR92A9G
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PDF
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UNR32A9G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Suitable for high-density mounting downsizing of the equipment
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2002/95/EC)
UNR32A9G
UNR32A9G
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PDF
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UNR32A9
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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Original
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2002/95/EC)
UNR32A9
UNR32A9
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PDF
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UNR52A9G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR52A9G Silicon NPN epitaxial planar type For digital circuits • Package Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
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2002/95/EC)
UNR52A9G
UNR52A9G
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Untitled
Abstract: No abstract text available
Text: TMP421 TMP422 TMP423 www.ti.com SBOS398C – JULY 2007 – REVISED MAY 2012 ±1°C Remote and Local TEMPERATURE SENSOR Check for Samples: TMP421, TMP422, TMP423 FEATURES DESCRIPTION • • • • • • • • • The TMP421, TMP422, and TMP423 are remote
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TMP421
TMP422
TMP423
SBOS398C
TMP421,
TMP422,
TMP423
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PDF
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Untitled
Abstract: No abstract text available
Text: TMP451 www.ti.com SBOS686 – JUNE 2013 ±1°C Remote and Local Temperature Sensor with η-Factor and Offset Correction, Series Resistance Cancellation, and Programmable Digital Filter Check for Samples: TMP451 FEATURES DESCRIPTION • The TMP451 is a high-accuracy, low-power remote
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TMP451
SBOS686
TMP451
12-bit
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marking MN sot-23
Abstract: SOT-23 MARKING mn
Text: MOTOROLA Order this document by MM B06050LT1 ID SEMICONDUCTOR TECHNICAL DATA Switching Diode CATHODE % ANODE 1 MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc *FM surge 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C
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OCR Scan
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B06050LT1
OT-23
O-236AB)
MMBD6050LT1/D
marking MN sot-23
SOT-23 MARKING mn
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Package Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
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Original
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2002/95/EC)
UNR92A9G
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PDF
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UNR52A9G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR52A9G Silicon NPN epitaxial planar type For digital circuits • Package Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
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Original
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2002/95/EC)
UNR52A9G
UNR52A9G
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PDF
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UNR92A9G
Abstract: UNR92a9
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Package Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
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Original
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2002/95/EC)
UNR92A9G
UNR92A9G
UNR92a9
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