1am surface mount diode
Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC
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O-226AA
O-236AB
OT-23)
OT-223)
MMBTA42LT1
MMBT5551LT1
BSP52T1
1am surface mount diode
c845
2GM sot-23 transistor
G1 TRANSISTOR SOT 23 PNP
2F PNP SOT23
P1F marking
AS3 SOT223
p2f sot-223
c845 TO 92
SOT-223 P1f
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1N5825
Abstract: 2N6040 2N6045 MJD122 MJD127 TIP120 TIP122 TIP125 TIP127 TIP125-TIP127
Text: ON Semiconductort NPN MJD122* Complementary Darlington Power Transistors PNP MJD127* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS
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MJD122*
MJD127*
2N6040
2N6045
TIP120
TIP122
TIP125
TIP127
r14525
MJD122/D
1N5825
MJD122
MJD127
TIP125-TIP127
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2N6387-D
Abstract: 1N5825 2N6387 2N6388 MSD6100
Text: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS
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2N6387
2N6388*
2N6388
2N6387,
O-220AB
2N6387/D
2N6387-D
1N5825
2N6387
2N6388
MSD6100
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2N6388
Abstract: 2N6387
Text: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS
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2N6387
2N6388*
2N6387
2N6388
2N6387,
O-220AB
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1N5825
Abstract: 2N6040 2N6045 MJD122 MJD127 TIP120 TIP122 TIP125 TIP127
Text: ON Semiconductort NPN MJD122* Complementary Darlington Power Transistors PNP MJD127* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS
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MJD122*
MJD127*
2N6040
2N6045
TIP120
TIP122
TIP125
TIP127
r14525
MJD122/D
1N5825
MJD122
MJD127
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MJD41C
Abstract: MJD42C MSD6100 TIP41 TIP42 TIP41 amplifier
Text: ON Semiconductort NPN Complementary Power Transistors MJD41C * PNP MJD42C * DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES
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MJD41C
MJD42C
TIP41
TIP42
r14525
MJD41C/D
MJD41C
MJD42C
MSD6100
TIP41 amplifier
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2N3771
Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON
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2N3771*
2N3772
2N3771
2N3771/D
2N3771
2N3771 power circuit
2N3772
transistor 2N3771
1N5825
2N6257
MSD6100
2N3771 power transistor
Power Transistor 2N3771
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11V0
Abstract: No abstract text available
Text: ON Semiconductort NPN Complementary Power Transistors MJD31C PNP MJD32C DPAK For Surface Mount Applications ON Semiconductor Preferred Devices Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES
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MJD31C
MJD32C
TIP31
TIP32
r14525
MJD31C/D
11V0
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MJD41C
Abstract: MJD42C MSD6100 TIP41 TIP42 NPN transistor 5 watts
Text: ON Semiconductort NPN Complementary Power Transistors MJD41C * PNP MJD42C * DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES
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MJD41C
MJD42C
TIP41
TIP42
r14525
MJD41C/D
MJD41C
MJD42C
MSD6100
NPN transistor 5 watts
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MJ15003 MJ15004
Abstract: mj15003 mj15004
Text: ON Semiconductort NPN Complementary Silicon Power Transistors MJ15003 * PNP MJ15004 * The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device
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MJ15003
MJ15004
MJ15003
MJ15004
r14525
MJ15003/D
MJ15003 MJ15004
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MJL3281A MJL1302A
Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors
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MJL3281A*
MJL1302A*
MJL3281A
MJL1302A
r14525
MJL3281A/D
MJL3281A MJL1302A
MJL3281A-D
complementary npn-pnp power transistors
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MJ15023
Abstract: MJ15025 MJ1502 mj150 MJ-15025 transistor MJ15025
Text: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON
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MJ15023
MJ15025
MJ15023
MJ15025
r14525
MJ15023/D
MJ1502
mj150
MJ-15025
transistor MJ15025
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2N6387-D
Abstract: 1N5825 2N6387 2N6388 MSD6100
Text: ON Semiconductort 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS
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2N6387
2N6388*
2N6388
2N6387,
220AB
r14525
2N6387/D
2N6387-D
1N5825
2N6387
2N6388
MSD6100
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MJ15025
Abstract: No abstract text available
Text: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON
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MJ15023
MJ15025
MJ15025
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mj15022
Abstract: mj15024 transistor MJ15024
Text: ON Semiconductort NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON
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MJ15022
MJ15024
MJ15024
transistor MJ15024
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2N6387
Abstract: 2N6387-D 1N5825 2N6388 MSD6100
Text: ON Semiconductor 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS
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2N6387
2N6388*
2N6388
2N6387,
220AB
r14525
2N6387/D
2N6387
2N6387-D
1N5825
2N6388
MSD6100
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PDF
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MJL3281A MJL1302A
Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors
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MJL3281A*
MJL1302A*
MJL3281A
MJL1302A
r14525
MJL3281A/D
MJL3281A MJL1302A
positioner
complementary npn-pnp power transistors
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2N5195
Abstract: No abstract text available
Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP
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2N5191,
2N5192
2N5194
2N5195*
2N5193
2N5195
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transistor 2n222
Abstract: MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210
Text: ON Semiconductort MJE13002 * MJE13003 * SWITCHMODEt Series NPN Silicon Power Transistors *ON Semiconductor Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power
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MJE13002
MJE13003
r14525
MJE13002/D
transistor 2n222
MJE13002 equivalent
mje13003 equivalent
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
MJE13002D
MJE13002
MJE13003
1N4933
2N2905
MJE210
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BLV 730
Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor
Text: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY
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COE82101
SCA57
BLV 730
COE82101
BLY90
BLW60
BLV25
BLW89
rf transformer philips india
SC-10
amplifier Blw89 transistor
blv 33 transistor
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2N5194
Abstract: 2N5195 2N5191 2N5192 2N5193
Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP
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2N5194
2N5195*
2N5191,
2N5192
r14525
2N5194/D
2N5194
2N5195
2N5191
2N5192
2N5193
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2N5191
Abstract: 2N5192 2N5193 2N5194 2N5195
Text: ON Semiconductort 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP
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2N5194
2N5195*
2N5191,
2N5192
r14525
2N5194/D
2N5191
2N5192
2N5193
2N5194
2N5195
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MJE5190
Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
Text: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN
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2N5191
2N5192
2N5194,
2N5195.
r14525
2N5191/D
MJE5190
2N5191
TO-225AA
to225a
2N5190
2N5192
2N5194
2N5195
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mjw16010a
Abstract: PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302
Text: ON Semiconductort NPN Silicon Power Transistors 1 kV SWITCHMODEt Series MJW16010A* *ON Semiconductor Preferred Device These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are
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MJW16010A*
r14525
MJW16010A/D
mjw16010a
PK MUR1100
AM503
MJE210
MTP12N10
MTP8P10
MUR105
P6302
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