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    TRANSISTORS PM OA LT ISS Search Results

    TRANSISTORS PM OA LT ISS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS PM OA LT ISS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


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    PDF OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF

    "h55" diode

    Abstract: No abstract text available
    Text: Single Channel Protector in an SOT-23 Package ADG465 ANALOG DEVICES FEATURES Fault and Overvoltage Protection up to ± 4 0 V Signal Paths Open Circuit w ith Power Off Signal Path Resistance of R0n w ith Power On 44 V Supply M axim um Ratings Low On Resistance 80 i l Typ


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    PDF OT-23 ADG465 "h55" diode

    LT1786F

    Abstract: 49/CTX210605 ccfl lamp circuit diagram
    Text: r r u n _ LT1786F m TECHNOLOGY FCRTURCS • Wide Battery Input Range: 4.5V to 30V ■ Grounded La m p or Floating La m p Configurations SMBus P ro g ra m m a b le CCFL S w itching R egulator to-lamp-current control” and communicates using the


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    PDF LT1786F LT1786F 200kHz LT1184F LT1186F 200kHz, LT1316 LT1372 500kHz 49/CTX210605 ccfl lamp circuit diagram

    10H124

    Abstract: LT1719 so-8 10H424 Model 450J r410a LT1719 LT1719CS8 LT1719IS8
    Text: Final Electrical Specifications r r u u m TECHNOLOGY _ LT1719 4.5ns S ingle/D ual Supply 3 V /5V C o m p a ra to r w ith Rail-to-Rail O u tp u t S e p te m b e r 1999 F€flTUR€S D C S C R IP TIO n • UltraFast: 4.5ns at 20mV Overdrive


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    PDF 10OmV LT1719 LT1016 LT1116 LT1016 LT1394 LT1671 450jjA LT1720/LT1721 10H124 LT1719 so-8 10H424 Model 450J r410a LT1719 LT1719CS8 LT1719IS8

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    g441

    Abstract: g441b
    Text: ANALOG DEVICES LC2M0S Quad SPST Switches AD G441 /AD G442/AD G444 FEATURES 44 V Supply Maxim um Ratings Vsg to V DD Analog Signal Range Low On Resistance < 70 £2 Low AR0 n (9 & max) Low Ron Match (3 LI max) Low Power Dissipation Fast Switching Times t 0N < 110 ns


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    PDF DG201A/ADG201 DG202A/ADG 211/A 441/D 442/D G442/AD ADG441 ADG444 ADG441/ADG442/ADG444 R-16A g441 g441b

    74ls189 ram

    Abstract: 27lS03 AM27LS03 74LS189 pmt circuit
    Text: i - A " — — Page 0001 01/16/89 11:16:37 Tx: AM27LS03 TED - Ft: AVO FMT » S e r v ic e s ,M e. A m 27LS 03 ^ 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word X 4-bit low-power Schottky RAMs


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    PDF AM27LS03 64-Bit 74LS189. WF001110 74ls189 ram 27lS03 74LS189 pmt circuit

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    PDF

    FSV 052

    Abstract: CA3130T A3130 ICAN-6080 equivalent ic of ca 3130 738R ICAN-6668 IC1 CA3130 CA 3130 SCHEMATIC DIAGRAM
    Text: C A 3130A CA 3130 ¡2 H a r r i s BiMOS Operational Amplifiers with MOSFET Input/C M O S Output A u g u st 1991 Features D escription • MOSFET Input Stage Provides: C A 31 3 0 A and C A 31 3 0 are In te g ra te d -c irc u lt operational am plifiers th a t c o m b in e th e a dvantage o f both C M O S and


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    PDF A3130 CA3130. FSV 052 CA3130T ICAN-6080 equivalent ic of ca 3130 738R ICAN-6668 IC1 CA3130 CA 3130 SCHEMATIC DIAGRAM

    nanosecond pulse stretcher

    Abstract: LT17201S8 and logic gate pulse stretcher circuit diode bridge LT 810 Model 450J 1N571 LT1720CMS8 LT1720CS8 LT1721
    Text: i T u u m TECHNOLOGY _ LT1720/LT1721 D ual/Q uad, 4.5ns, Single Supply 3V/5V C om parators with Rail-to-Rail Outputs FCRTURCS D C S C R IP TIO n • UltraFast: 4.5ns at 20mV Overdrive 7ns at 5mV Overdrive ■ Low Power: 4mA per Comparator ■ Optimized for 3V and 5V Operation


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    PDF 100mV LT1720/LT1721 Comparator40dB LT1016 LT1116 LT1016 LT1394 LT1671 450jjA LT1719 nanosecond pulse stretcher LT17201S8 and logic gate pulse stretcher circuit diode bridge LT 810 Model 450J 1N571 LT1720CMS8 LT1720CS8 LT1721

    MFC6030

    Abstract: MFC8010 mfc8040 MC1335 mc1345 MFC4060 mc1304 mfc6010 germanium TRANSISTOR C1741
    Text: G E N E R A L IN F O R M A T IO N Master Index Interchangeability Guide Packaging Information Non-Encapsulated Device General Information S E L E C T O R G U ID E D A T A S H E E T S P E C IF IC A T IO N S | . . . in alpha-numerical sequence by device type number, unless otherwise


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    PDF MCI350, MCI352, MC1353 MC1330. AN-546 MFC6030 MFC8010 mfc8040 MC1335 mc1345 MFC4060 mc1304 mfc6010 germanium TRANSISTOR C1741

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    2N3800

    Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
    Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­


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    PDF 29B52595F13 52595F09 2N3800 germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817

    3915N

    Abstract: LM 3915 IC lm3915 vu meter moving display for leds LF351 APPLICATION IC lm3915 3915S 20 led VU meter transistor nm 3915 10000 MF 450 V CAPACITOR
    Text: LM3915 National Semiconductor LM3915 Dot/Bar Display Driver General Description The LM 3915 is very versatile. The o utputs can drive LCDs, vacuum fluorescents and incandescent bulbs as well as LEDs of any color. M ultiple d evices can be cascaded for a dot or bar m ode display with a range o f 60 or 90 dB.


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    PDF LM3915 LM3915 3915N LM 3915 IC lm3915 vu meter moving display for leds LF351 APPLICATION IC lm3915 3915S 20 led VU meter transistor nm 3915 10000 MF 450 V CAPACITOR

    Untitled

    Abstract: No abstract text available
    Text: Liím LTl 251/LT 1256 TECHNOLOGY 40M Hz V id e o Fad er a n d D C G a in C o n tro lle d Am plifier F€flTUR€S DCSCRIPTIOn • Accurate Linear Gain Control: ±1% Typ, ±3% Max ■ Constant Gain with Temperature The LT1251/LT1256 are two-input, one-output, 40MHz


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    PDF 251/LT LT1251/LT1256 40MHz 300nA 300nA

    md918 Transistor

    Abstract: germanium MM2264 2N3050 MC369G
    Text: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­


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    PDF MC1550G md918 Transistor germanium MM2264 2N3050 MC369G

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


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    PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D

    MC1648 equivalent

    Abstract: AN-532a an532a motorola application notes MC1648 MC1648 internal schematic tag c2 680 800 "Varactor Diode" symbol of varactor diode and equivalent circuit MC1600
    Text: L O G IC D I A G R A M S continued 2 OSCILLATOR I—MULTIVIBRATOR M C I 6 48 E m itte r C o u p le d O s c illa to r M C 1658 V o Itage-Co litr o I led M u ltiv ib ra to r C xi CX2 V c c = Pins 1, 14 V EE = Pins 7, 8 V CC1 - 1 V CC2 " a ' n 5 V ee = |J'n 6


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    PDF MC1651 MC1650) MC1651) MC1648 10MHz MC1648 equivalent AN-532a an532a motorola application notes MC1648 MC1648 internal schematic tag c2 680 800 "Varactor Diode" symbol of varactor diode and equivalent circuit MC1600

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    Untitled

    Abstract: No abstract text available
    Text: SP4414 SIGNAL PROCESSING EXCELLENCE Low Voltage Electroluminescent Lamp Driver • Low Power +2.2V to +4.5V Battery Operation ■ Low-Cost EL Driver Ideal for LED Backlighting Replacement ■ DC-to-AC Inverter can Produce Over 180VPp for EL Lamps ■ Requires a 32kHz External Clock Signal


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    PDF SP4414 180VPp 32kHz SP4414

    GA3140

    Abstract: a3140 TL 555c AM TL 555c 741 LEM ca3140ab
    Text: {Sì h a r r is CA3140, CA3140A S E M I C O N D U C T O R w m w " ^ 7 m w 4.5MHz, B iM O S Operational Amplifier with M O S F E T I n p u t / B i p o l a r O u t p u t N ovem ber 1996 F e a tu re s D e s c rip tio n • M O S F E T I nput S ta ge The CA3140A and CA3140 are integrated circuit operational ampli­


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    PDF CA3140, CA3140A CA3140A CA3140 GA3140 a3140 TL 555c AM TL 555c 741 LEM ca3140ab

    Untitled

    Abstract: No abstract text available
    Text: r r u n m _ LT1581/LT1581-2.5 TECHNOLOGY 1OA, Very Low D ro p o u t R egulator KfìTUlKS DCSCRIPTIOn • Low Dropout, 430mV at 10A Output Current ■ Fast Transient Response ■ Remote Sense ■ 1mV Load Regulation ■ Fixed 2.5V Output and Adjustable Output


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    PDF LT1581/LT1581-2 430mV 10OmV LT1575/LT1577 LT1580 LT1584 LT1585

    1n414b diode uses

    Abstract: IRFZ44 "pin compatible"
    Text: DtMGTD/^L [ H I L I M i E lu m TECHNOLOGY Final E lectrical S pecifications LT1336 Half-Bridge N-Channel Power MOSFET Driver w ith Boost R egulator January 1996 FCOTURCS DCSCRIPTIOn • Floating Top Driver Switches Up to 60V ■ Internal Boost Regulator for DC Operation


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    PDF 180ns 000pF LT1336 LT1158 LT1160 LT1162 1n414b diode uses IRFZ44 "pin compatible"