TRANSISTORS TN2905 Search Results

TRANSISTORS TN2905 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTORS TN2905 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PNP 3-224 Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11	Original	PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A	PDF
2n6718 Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722 2N6723 Text: Power Transistors TO-237 Case TYPE NO. IC PD A (W) MAX BVCBO (V) MIN BVCEO *BVCES (V) MIN hFE @ IC VCE(SAT) @ IC MIN MAX fT (A) (V) MAX (A) (MHz) MIN 250 1,000 0.5 1,000 50 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 NPN PNP 2N6714 2N6726 2.0 2.0 40	Original	O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 2n6718 2N6719 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722 2N6723	PDF
2N6718 Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722 Text: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100	Original	O-237 2N6722 2N6723 TN2102 TN2219A TN2905A TN3019 TN3020 TN3053 TN3724 2N6718 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722	PDF
TN2907A Abstract: No abstract text available Text: TN2905A TN2905A TN2907A C B TO-226 E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*	Original	TN2905A TN2907A) O-226 PN2907A TN2907A	PDF
TN2905A Abstract: TN-29-07 CBVK741B019 F63TNR PN2222N PN2907A TN2907A TN2905 Text: TN2905A TN2905A TN2907A C TO-226 B E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*	Original	TN2905A TN2907A) O-226 PN2907A TN2905A TN-29-07 CBVK741B019 F63TNR PN2222N TN2907A TN2905	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
Untitled Abstract: No abstract text available Text: TO-237 PLASTIC PACKAGE TRANSISTORS PNP J • Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. CSA10130 1 Po 'c (A) 'cm (A) 'ceo (MA) Max ^cs (V) hFE @ <c* (mA) ^CE ^CEISAT] @ ^BE(SAT) «0«) (ns) Max CDIL Case Style	OCR Scan	O-237 O-237-2 TN2905 TN2905A TN369 TN4030	PDF
2N2369 SOT-23 Abstract: pn4122 2N708 NPN switching transistor 2N4403 2N3467 2N3905 2N3906 2N4402 2N4403 MMBT3906 Text: böE ]> • bsoii3 ü 0031530 aob High Speed Saturateci Switching Transistors continueai ' lre@lc PMP /IV VC£(sat @(C & mA (MHz) Min Package mA 15 300 T0-237(91) 850 m ft Min mA (Volts) Max 285 150 100 150 0.3 150 !" NPN (ns) Max W (Volts) Min rrM T/-AU R	OCR Scan	S0113Ã TN2219A T0-237 2N3467 2N3905 T0-92 2N3906 2N4402 2N2369 SOT-23 pn4122 2N708 NPN switching transistor 2N4403 2N4403 MMBT3906	PDF
1501A50 Abstract: National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237 Text: bôE ]> • b S ü ll3 G High Speed Saturated Switching Transistors continueai 3 Devices VGEO(SKt (Volts) Min 40 NPN PNP 15 hpE @ lc VC£(at) (C 4 » W@»c to# (MHz) (ns) (Volts) (ns) Max Max mA Min fflA Max mA mA Min /n p D(Amfc) Package (mW) @ 25°C	OCR Scan	TN2219A T0-237 T0-39 T0-92 O-236* 1501A50 National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237	PDF
CTN640 Abstract: CSA1013R CSA1013Y CSA931 CSA931R CSA931Y CTN369 CTN491 CTN492 CTN493 Text: TO-237 PLASTIC PACKAGE TRANSISTORS PNP M axim um R atin gs Type Electrical Characteristics (Ta=25°C, U n le ss Otherw ise Specified) @ ^CBO ^CEO ^EBO P0 (V) Min (V) Min (V) Min (W) @ Tc-25°c CSA10130 160 160 6 0.9 1 1 150 100 200 200 5 1.5 500 35 15 CSA1013R	OCR Scan	O-237 CSA10130 O-237-1 CSA1013R CSA1013Y CSA931 CSA931 CTN640 CSA931R CSA931Y CTN369 CTN491 CTN492 CTN493	PDF
Untitled Abstract: No abstract text available Text: Power Transistors TO-237 Case O Z TYPE ic PD BVCBO BVCEO @ Ic hFE VCE SAT @ IC fT * bv Ce s (A) NPN PNP (W) MAX (mA) (V) (V) MIN MIN MIN MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000	OCR Scan	O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718	PDF
CENW64 Abstract: 2n6722 Text: Power Transistors TO-237 Case O z TYPE ic PD BVCBO ic hFE BVCEO V CE SAT ® IC ft *BVggg (A) (W) MAX (V) (V) (mA) (V) (mA) MAX (MHz) NPN PNP MIN MIN MIN MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 MIN 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000	OCR Scan	O-237 2N6726 2N6727 2N6728 2N6729 2N6730 2N6714 2N6715 2N6716 2N6717 CENW64 2n6722	PDF
Untitled Abstract: No abstract text available Text: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO Ic hRE VCE SAT @ IC fT *b v c e s (A) NPN PNP m MAX (n»A) (V) (V) MIN MIN MIN MAX 00 <mA) MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 2N6715 2N6727 2.0 2.0 50 40 50 250 2N6716 2N6728 2.0 2.0 60	OCR Scan	O-237 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722	PDF

2N6730 Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728 Text: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250	OCR Scan	O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 2N6730 2N6719	PDF
T1P42C Abstract: No abstract text available Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN	OCR Scan	O-220 O-220 O-237-2 00014QÃ T1P42C	PDF
Untitled Abstract: No abstract text available Text: PNP Transistors * D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s National p^p s e m i c o n d u c t o r v D evice No. 2N4402 2N4403 Case Style TO-92 92 TO-92 (92) ¥ cbo v v CEO v V EBO (V) Min (V) Min (V) Min 40 40 5 40 40 *CBO M ax Q e h FE	OCR Scan	2N4402 2N4403	PDF
2N6706 Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713 Text: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base	OCR Scan	O-237 O-237 O-237-1 O-237-2 TN4037 O-237-2 TN4234 2N6706 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713	PDF
T0236 Abstract: to236 2N2222A Text: bßE T> m bSQ113G CHM * N S C S NATL SEniCOND DISCRETE Devices VcEO(sust) (Volts) Min NPN 60 50 01» PNP mA Min mA VcE{sat) lc 4 Ig (Volts) Max mA T (MHz) mA Min P D(Amb\| Package (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150	OCR Scan	bSQ113G 2N2904A 2N2905A 2N2907A MMBT2907A PN2907A PN3645 TN2905A O-236* T0-92 T0236 to236 2N2222A	PDF
2N2907a national Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A Text: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150	OCR Scan	2N2904A 2N2905A 2N2907A MMBT2907A O-236* PN2907A T0-92 PN3645 TN2905A 2N2907a national 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725	PDF
2N4355 Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12 Text: NATL S E M IC O N D { D I S C R E T E ! ifi DE \| This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F \| t S D 1 1 3 D	OCR Scan	50113G 003SMM3 30fiA, 2N4355 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 2N4354 T-12	PDF
2N3702 NATIONAL SEMICONDUCTOR Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644 Text: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60	OCR Scan	bS0113Q T-37-Of T-37-01 2N3702 NATIONAL SEMICONDUCTOR 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644	PDF
BC337 BC547 Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962 Text: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150	OCR Scan	bSD113Q 2N4032 2N6554 BT2907A PN2907A PN3645 PN4249 PN4250A PN4355 TN2905A BC337 BC547 BC182 BC547 BC547 surface mount T0-92 TN2905A BC237 2n5962	PDF
BC337/BC327 Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A Text: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300	OCR Scan	bS0113D 2N4032 2N6554 T0-202 MMBT2907A O-236* PN2907A PN3645 T0-92 PN4249 BC337/BC327 BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR BC547 to92 BC237 national	PDF

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TRANSISTORS TN2905 Search Results

TRANSISTORS TN2905 Result Highlights (5)

TRANSISTORS TN2905 Datasheets Context Search

PNP 3-224

2n6718

2N6718

TN2907A

TN2905A

aeg diode Si 61 L

y51 h 120c

Untitled

2N2369 SOT-23

1501A50

CTN640

Untitled

CENW64

Untitled

2N6730

T1P42C

Untitled

2N6706

T0236

2N2907a national

2N4355

2N3702 NATIONAL SEMICONDUCTOR

BC337 BC547

BC337/BC327