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    TRANSISTORS TO-92 CASE BC Search Results

    TRANSISTORS TO-92 CASE BC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS TO-92 CASE BC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


    Original     		PDF O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f

    2N5963

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830

    2N5822

    Abstract: 2N5963 MPS3708 equivalent MPS750 mps404a MPS751 equivalent 2N5812 2N5813 2N5816 2N5817
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3704 MPS3706 MPS3707 MPS3708 2N5822 2N5963 MPS3708 equivalent MPS750 mps404a MPS751 equivalent 2N5812 2N5813 2N5816 2N5817

    BC547 hie hre hfe

    Abstract: 10D3 BC546 BC546A BC547 BC548 BC549 BC556 BC559 TO-92 Gehause
    Text: BC546xBK . BC549xBK BC546xBK . BC549xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC546xBK BC549xBK UL94V-0 BC546 BC547 BC548/549 BC556 BC559 BC547 hie hre hfe 10D3 BC546 BC546A BC547 BC548 BC549 BC556 BC559 TO-92 Gehause

    ic 546

    Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
    Text: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 ic 546 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b

    Untitled

    Abstract: No abstract text available
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC337-xBK BC338-xBK UL94V-0 BC337 BC338 BC327 BC328 BC337-16

    BC337 pnp transistor datasheet

    Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC337-xBK BC338-xBK UL94V-0 BC337 BC338 25plement BC327 BC328 BC337 pnp transistor datasheet transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC328 BC337-16

    transistors BC 557C

    Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
    Text: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 transistors BC 557C transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b

    C 337-25

    Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
    Text: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 BC337-40 BC338-40 C 337-25 C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338

    Untitled

    Abstract: No abstract text available
    Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC327-xBK BC328-xBK UL94V-0 BC327 BC328 BC337 BC338 BC327-16

    BC327 NPN transistor datasheet

    Abstract: bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16
    Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC327-xBK BC328-xBK UL94V-0 BC327 BC328 BC337 BC338 BC327-16 BC327 NPN transistor datasheet bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16

    CBC327

    Abstract: C 32725 C 327-25 transistors bc 337 cbc328 BC 327 10D3 BC327-40 BC328-40 c 327 pnp
    Text: BC 327 / BC 328 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 BC327-40 BC328-40 CBC327 C 32725 C 327-25 transistors bc 337 cbc328 BC 327 10D3 BC327-40 BC328-40 c 327 pnp

    10D3

    Abstract: MPSA42 MPSA92
    Text: MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-07-07 Power dissipation Verlustleistung ±0.1 E BC min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3


    Original     		PDF MPSA42-BK UL94V-0 MPSA42 MPSA92 10D3 MPSA42 MPSA92

    BC327 45V 800mA PNP Transistor

    Abstract: TRANSISTOR BC337-25 PNP BC337 45V 800mA TRANSISTOR BC337-40 PNP BC337-25 PNP transistor marking EB 202 transistor TRANSISTOR BC337-25 BC327 45V 800mA PNP Transistors TRANSISTOR BC327-40 OF TRANSISTOR BC337
    Text: BC327 SERIES PNP GENERAL PURPOSE TRANSISTORS 5 VOLTAGE 45 POWER 625mW FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = -800mA MECHANICAL DATA 1 COLLECTOR Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208


    Original     		PDF BC327 625mW -800mA MIL-STD-202, BC327-16: BC327-25: BC327-40: BC327-xx BC327 45V 800mA PNP Transistor TRANSISTOR BC337-25 PNP BC337 45V 800mA TRANSISTOR BC337-40 PNP BC337-25 PNP transistor marking EB 202 transistor TRANSISTOR BC337-25 BC327 45V 800mA PNP Transistors TRANSISTOR BC327-40 OF TRANSISTOR BC337

    BC337 45V 800mA NPN Transistor

    Abstract: TRANSISTOR BC337-25 BC337 BC33740 TRANSISTOR BC337-40 BC337-16 BC337 45V 800mA BC337-40 bc337-40 npn transistor BC-337-16
    Text: BC337 SERIES NPN GENERAL PURPOSE TRANSISTORS 5 VOLTAGE 45 POWER 625mW FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 800mA MECHANICAL DATA 1 COLLECTOR Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208


    Original     		PDF BC337 800mA 625mW MIL-STD-202, BC337-16: BC337-25: BC337-40: BC337-40 BC337-xx BC337 45V 800mA NPN Transistor TRANSISTOR BC337-25 BC33740 TRANSISTOR BC337-40 BC337-16 BC337 45V 800mA bc337-40 npn transistor BC-337-16

    MPSA42

    Abstract: MPSA43 na-100 10D3 MPSA92 MPSA93
    Text: MPSA42 / MPSA43 MPSA42 / MPSA43 High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2005-06-17 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx.


    Original     		PDF MPSA42 MPSA43 UL94V-0 MPSA42 MPSA92, MPSA93 MPSA43 na-100 10D3 MPSA92 MPSA93

    10D3

    Abstract: MPSA42 MPSA92 TO-92 Gehause
    Text: MPSA42 MPSA42 High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2010-09-30 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. Gewicht ca.


    Original     		PDF MPSA42 UL94V-0 MPSA92 10D3 MPSA42 MPSA92 TO-92 Gehause

    MPSA44

    Abstract: No abstract text available
    Text: MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN NPN Version 2011-07-07 Power dissipation Verlustleistung ±0.1 E BC min 12.5 4.6±0.1 4.6 625 mW Plastic case Kunststoffgehäuse TO-92 10D3


    Original     		PDF MPSA44-BK MPSA44-BK UL94V-0 MPSA44 MPSA94

    Untitled

    Abstract: No abstract text available
    Text: MPSA42 MPSA42 High Voltage Si-Epitaxial Planar Transistors Si-Epitaxial Planar Hochspannungs-Transistoren NPN NPN Version 2006-09-14 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca.


    Original     		PDF MPSA42 UL94V-0 MPSA92

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-92 Case Continued TO-92 T Y P E NO. FAMILY LEAD CO DE VCBO vCEO ItPE v E B O tCB O v C B O (V) (V) TO-92-18R MIN *VCES MIN MIN (V) @ V CE (V) (V) e ic (mA) TO-92-18R V CE(S<fcT) ® *< (V) (mA) ’te e s MIN *CEV M AX Cob


    OCR Scan     		PDF O-92-18R 2N5812 2N5813 2NS816 2NS817 2N5818 2N5819 2N5822 2N5823

    IC cbe

    Abstract: 2N6426 MPS3708
    Text: Sm all Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE h FE v CBO v CEO v EBO •CBO 8 v CBO (V) (V) (V) m •TO-92-18R MIN *VCES MIN MIN v CE (V) (V) TO-92-18R O lC VCE(S;W )® 'c <mA) (V) (mA) *hfe(1kHZ) *r c ob NF ‘ oft (PF)


    OCR Scan     		PDF O-92-18R to-92-18r 2n5812 2n5813 2n5816 2n5817 2n581b mps3415 mps3702 mps3704 IC cbe 2N6426 MPS3708

    MPS3708

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TY P E NO. FAM ILY LEAD v CBO v CEO h FE v EBO >CBO 48 v CBO « v CE @ lc TO-92-18R V CE(S; VT) 'C C „b *T NF ‘ off CO D E (V ) (V ) •TO-92-18R MIN *V C ES MIN (V ) (nA) MIN *'C E V (V ) (V )


    OCR Scan     		PDF O-92-18R O-92-18R 2N5812 2N5813 2N5816 2N5817 2N5818 MPS3415 MPS3702 MPS3704 MPS3708 2N5819 2N5822 2N5823 2N5830

    BC548 Texas Instruments

    Abstract: SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557
    Text: 1 Silect Coding Silect transistors are coded on the indexing flat of the TO-92 outline. Pin Configurations The majority of Silect transistors shown are available in several alternative case outlines or pin configurations which include many pre-formed lead types. Devices are therefore available


    OCR Scan     		PDF SX4061 2N4061T05 2N3709, 2N4062 SX4062 2N4062T05 2N3710, 2N3711 BC546 BC547 BC548 Texas Instruments SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557

    transistor Comparison Tables

    Abstract: pin configuration npn transistor BC557 BC647 BC548 or BC558B TRANSISTOR To92 transistor motorola BC647B BC319 BC182 BC547 pin configuration NPN transistor BC548B pin configuration NPN transistor BC548
    Text: Plastic-Encapsulated Small-Signal Transistors CASE 29-02 CASE 29-03 TO-92 M o to ro la ’s sm all-sig na l TO-92 p la stic tra n s is to rs encom ­ pass hundreds of d evices w ith a w id e v a rie ty of ch a ra cte ristics fo r gen eral purpose, a m p lifie r and s w itc h ­


    OCR Scan     		PDF BC556 BC546A BC556A BC546B BC556B BC547 BC557 BC547A BC557A BC647B transistor Comparison Tables pin configuration npn transistor BC557 BC647 BC548 or BC558B TRANSISTOR To92 transistor motorola BC319 BC182 BC547 pin configuration NPN transistor BC548B pin configuration NPN transistor BC548