qfn 6 x 6 TRAY
Abstract: QFn Package tray pd0018 tfBGA 8 x 8 tray package tray outline ufdfpn 639X qfn 5 x 6 TRAY qfn tray 5 mm x 6 mm qfn 5 x 5 TRAY
Text: PD0018 Packing information Tray for Ball Grid Array and QFN packages Introduction Tray for Ball Grid Array and QFN UFDFPN packages can be supplied in tray packing. Refer to Table 1 for the list of packages supplied in trays. The objective of this document is provide a detailed description of the tray.
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PD0018
1x10E5
1x10E11
PD0018
qfn 6 x 6 TRAY
QFn Package tray
tfBGA 8 x 8 tray
package tray outline
ufdfpn
639X
qfn 5 x 6 TRAY
qfn tray 5 mm x 6 mm
qfn 5 x 5 TRAY
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pd0008
Abstract: tray 8 x 8 TSOP TRAY 40 PIN TSOP package tray N1N213 Package and Packing Information ST
Text: PD0008 Packing information Tray for TSOP packages type 1 Introduction TSOP type-1 packages can be supplied in tray packing. Refer to Table 1 for the list of TSOP type-1 packages supplied in trays. The objective of this document is provide a detailed description of the tray. It applies to all
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PD0008
105cm.
PD0008
tray 8 x 8
TSOP TRAY 40 PIN
TSOP package tray
N1N213
Package and Packing Information ST
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rx2 RMC
Abstract: Tyco A1029-B A1029-B gps m 89 pin configuration testo rs232 cable a1029 DKS1029-B testo rs232 A1029D egnos waas gps module
Text: Get your Position! A1029-B/D Easy plug-in GPS Modules The A1029-B as well as the A1029-D expand the product line of Tyco's GPS receiver modules based on STMicroelectronics' STA2051 base-band chip. Offering a high level of performance at ultra-low power consumption, these receivers allow an easy plug-in to motherboards, show durability towards shock and
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A1029-B/D
A1029-B
A1029-D
STA2051
SE4100L
4100L
PS-016-1205
rx2 RMC
Tyco A1029-B
gps m 89 pin configuration
testo rs232 cable
a1029
DKS1029-B
testo rs232
A1029D
egnos waas gps module
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STMicroelectronics bake time chart
Abstract: water pressure i2c
Text: APPLICATION NOTE SOLDERING RECOMMENDATIONS and PACKAGING INFORMATION by the Micro Divisions INTRODUCTION STMicroelectronics supports various package types to adapt MCUs to customer requirements. Beside the available mounting technology SMD or Throughhole , the choice is often
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AN2639
Abstract: top-side marking STMicroelectronics LQFP SM817 TOPSIDE MARKING PDIP STMicroelectronics AN2034 J-STD-020D J-STD-020d.1 disadvantages of microcontroller JESD22A111 VFQFPN thermal resistance
Text: AN2639 Application note Soldering recommendations and package information for Lead-free ECOPACK microcontrollers Introduction STMicroelectronics microcontrollers support various types of Lead-free ECOPACK® package to meet customer requirements. The mounting technologies are Surface mount technology SMT , and Through hole
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AN2639
AN2639
top-side marking STMicroelectronics LQFP
SM817
TOPSIDE MARKING PDIP STMicroelectronics
AN2034
J-STD-020D
J-STD-020d.1
disadvantages of microcontroller
JESD22A111
VFQFPN thermal resistance
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GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICE
Abstract: GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICES shelf life STMICROELECTRONICS MSL Corn moisture sensitive handling and packaging
Text: GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICES According to the specification J-STD-020 * Technical note by CORPORATE PACKAGE DEVELOPMENT (*) issued jointly by EIA/Jedec Jc-14.1 and IPC B-10a Committees handling SMDs in damproof bags Materials Desiccant
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J-STD-020(
Jc-14
B-10a
30C/60%
30/C60%
125C/24h
GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICE
GUIDELINES FOR HANDLING MOISTURE SENSITIVE DEVICES
shelf life
STMICROELECTRONICS MSL
Corn
moisture sensitive handling and packaging
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5962-06237
Abstract: RHF43BK-01V RHF43B RHF43BK1 RHF43BK2
Text: RHF43B RAD-hardened Precision bipolar single operational amplifier Features • High immunity to radiations, 300kRad TID; SEL immune at 68MeV/cm²/mg LET ions. ■ Rail-to-rail input/output ■ 8MHz gain bandwidth at 16V ■ Stable for gain ≥ 5 ■ Low input offset voltage: 100µV typ
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RHF43B
300kRad
68MeV/cm
200mA
RHF43B
5962-06237
RHF43BK-01V
RHF43BK1
RHF43BK2
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RHF43B
Abstract: RHF43BK-01V RHF43BK1 RHF43BK2 68MeV
Text: RHF43B RAD-hardened precision bipolar single operational amplifier Features • High immunity to radiations, 300kRad TID; SEL immune at 68MeV/cm²/mg LET ions. ■ Rail-to-rail input/output ■ 8MHz gain bandwidth at 16V ■ Stable for gain ≥ 5 ■ Low input offset voltage: 100µV typ
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RHF43B
300kRad
68MeV/cm
200mA
5962-062xx
RHF43B
RHF43BK-01V
RHF43BK1
RHF43BK2
68MeV
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5962-06237
Abstract: No abstract text available
Text: RHF43B RAD-hardened precision bipolar single operational amplifier Features • High immunity to radiations, 300kRad TID; SEL immune at 68MeV/cm²/mg LET ions. ■ Rail-to-rail input/output ■ 8MHz gain bandwidth at 16V ■ Stable for gain ≥ 5 ■ Low input offset voltage: 100µV typ
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RHF43B
300kRad
68MeV/cm
200mA
RHF43B
5962-06237
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5962-06237
Abstract: RHF43BK-01V RHF43B RHF43BDIE2V RHF43BK1 RHF43BK2 N1215
Text: RHF43B RAD-hardened precision bipolar single operational amplifier Features • High radiation immunity: 300 kRad TID at high/low dose rate ELDRS-free , tested immunity of SEL /SEU at 125° C under 120 MeV/mg/cm² LET ions, 14 V supply ■ Output rail-to-rail
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RHF43B
5962-06237
RHF43BK-01V
RHF43B
RHF43BDIE2V
RHF43BK1
RHF43BK2
N1215
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Ablebond 8390
Abstract: sil154 kyro PowerVR B1G5 HC100 PowerVR imagination technologies bitblt kyro 2 Bt868
Text: Integrated 2D/3D graphics accelerator – Product Overview PRELIMINARY DATA FEATURES • PowerVR Series 3 arcade performance 3D ● DirectX7 Flexible Vertex Format support ● 8 layer Multi-texturing ● Twin high performance texturing pipelines ● Full triangle setup hidden surface
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128-bit
Ablebond 8390
sil154
kyro
PowerVR
B1G5
HC100
PowerVR imagination technologies
bitblt
kyro 2
Bt868
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trays STMICROELECTRONICS
Abstract: No abstract text available
Text: SD1458 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –55 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ HIGH SATURATED POWER CAPABILITY ■ DESIGNED FOR HIGH POWER LINEAR
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SD1458
SD1458
trays STMICROELECTRONICS
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SD1407
Abstract: vk200 VK-200 vk 200 SD140
Text: SD1407 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar
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SD1407
SD1407
vk200
VK-200
vk 200
SD140
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TH416
Abstract: SD1729
Text: SD1729 TH416 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 130 W PEP WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon
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SD1729
TH416)
SD1729
TH416
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SD1446
Abstract: arco 468 M113
Text: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
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SD1446
SD1446
arco 468
M113
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b963
Abstract: No abstract text available
Text: ADSL Frequency Filter Inductors Excellent THD performance in a small footprint Used exclusively for frequency filtering SMT compact footprint Matched to various manufacturers’ ADSL chipsets Electrical Specifications @ 25°C - Operating Temperature -40°C to +85°C
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BX8153
BX2125A
BX2198
BX2184
BX8195
BX8254W
BX8082
B2126A
B2208
BX8253W
b963
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SD1274-01
Abstract: M113 F136
Text: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for
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SD1274-01
SD1274-01
M113
F136
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Untitled
Abstract: No abstract text available
Text: SD1398 RF POWER BIPOLAR TRANSISTORS 850-960 MHZ APPLICATIONS FEATURES SUMMARY • 850 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ GOLD METALLIZATION ■ POUT = 6.0 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1398 is a gold metallized epitaxial silicon
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SD1398
SD1398
SD1423
SD1424.
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TH560
Abstract: No abstract text available
Text: SD1730 TH560 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 12 dB GAIN
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SD1730
TH560)
SD1730
TH560
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Untitled
Abstract: No abstract text available
Text: SD1275-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 40 W MIN. WITH 9.0 dB GAIN DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for
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SD1275-01
SD1275-01
SD1275-1
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capacitor 100uF 63V
Abstract: No abstract text available
Text: SD1457 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF
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SD1457
SD1457
capacitor 100uF 63V
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Untitled
Abstract: No abstract text available
Text: SD1423 RF POWER BIPOLAR TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS FEATURES SUMMARY • 800 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ CLASS AB LINEAR OPERATION ■ POUT = 15 W MIN. WITH 8.0 dB GAIN
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SD1423
800-960MHZ
SD1423
SD1424.
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SD1487
Abstract: 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465
Text: SD1487 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 12.5 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 100 W MIN. WITH 12.0 dB GAIN DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon
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SD1487
SD1487
150 watt hf transistor 12 volt
Date Code Marking STMicroelectronics
arco 465
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electrolytic capacitor 47uF
Abstract: No abstract text available
Text: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base
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SD4600
SD4600
960MHz
electrolytic capacitor 47uF
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