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    TRENCH MOS SCHOTTKY RECTIFIER Search Results

    TRENCH MOS SCHOTTKY RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CRG09A Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    TRENCH MOS SCHOTTKY RECTIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP15U100S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1309033 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311020 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP10U60S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1311023 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401021 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1310024 PDF

    10U45

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 10U45 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311001 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311002 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401022 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30H120C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401025 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311017 PDF

    marking b14 diode

    Abstract: No abstract text available
    Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability


    Original     		TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 marking b14 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability


    Original     		TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1311013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309049 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309046 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307012 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309048 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1310028 PDF