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    TRENCH MOSFET Search Results

    TRENCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
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    TRENCH MOSFET Price and Stock

    Nexperia NX7002AK,215

    MOSFETs SOT23 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI NX7002AK,215 Reel 6,741,000 3,000
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    • 10000 $0.0126
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    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002,215 Reel 6,648,000 3,000
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    • 10000 $0.0198
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    Nexperia 2N7002/HAMR

    MOSFETs SOT23 N CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002/HAMR Reel 2,601,000 3,000
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    • 10000 $0.0207
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    Nexperia 2N7002P,215

    MOSFETs 2N7002P/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002P,215 Reel 2,592,000 3,000
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    • 10000 $0.0194
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    Nexperia 2N7002BK,215

    MOSFETs 2N7002BK/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002BK,215 Reel 915,000 3,000
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    Find more TRENCH MOSFET price and stock on Findchips.com

    TRENCH MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    QS6U24

    Abstract: TSMT6 QS6M4
    Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 2.9 (6) (4) (3) (5) (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) The QS6U24 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET


    Original     		QS6U24 TSMT6 QS6M4 PDF

    diode TA 20-08

    Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
    Text: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power


    Original     		SPC4703 SPC4703combines -20V/-3 diode TA 20-08 P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet PDF

    so8 footprint

    Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
    Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon


    Original     		OT669) PSMN5R5-60YS) so8 footprint sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL PDF

    ISL9N2357D3ST

    Abstract: N2357 n2357d
    Text: ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET UltraFET® Trench UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching


    Original     		ISL9N2357D3ST 5600pF ISL9N2357D3ST N2357 n2357d PDF

    P-Channel MOSFET code 1A

    Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		SPC6801 SPC6801combines -30V/-2 105ise P-Channel MOSFET code 1A P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V PDF

    Schottky Diode 20V 5A

    Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		SPC6801 SPC6801combines -30V/-2 105ise Schottky Diode 20V 5A Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A PDF

    tea1761

    Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
    Text: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features • Max. RDS ON = 150m at VGS = 10V, ID = 2A  Low gate charge: Qg=18nC (Typ.)  High performance trench technology for extremely low RDS(on)  100% avalanche tested


    Original     		SNN0310Q OT-223 24-NOV-11 KSD-T5A012-000 PDF

    TO220 package

    Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
    Text: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DETAIL Part Num: IXUV170N075S Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 75V 1st Generation Trench Gate Power MOSFETs Configuration: Single Package Style: PLUS-220 SMD Status: Active Part Parameter IXUV170N075S


    Original     		IXUV170N075S PLUS-220 PDF

    N310AS

    Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
    Text: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 1800pF N310AS N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST PDF

    ISL9N303AP3

    Abstract: ISL9N303AS3 ISL9N303AS3ST N303AP N303AS diode marking 41a on semiconductor KP20
    Text: PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original     		ISL9N303AP3 ISL9N303AS3ST ISL9N303AS3 7000pF ISL9N303AS3 N303AP N303AS diode marking 41a on semiconductor KP20 PDF

    KMD7D5P

    Abstract: kmd7d5p40qa 40QA
    Text: SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for battery protection circuit.


    Original     		KMD7D5P40QA 100ms KMD7D5P kmd7d5p40qa 40QA PDF

    N303AP

    Abstract: M043 Diode ISL9N303AP3 ISL9N303AS3 ISL9N303AS3ST N303AS
    Text: PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining


    Original     		ISL9N303AP3 ISL9N303AS3ST ISL9N303AS3 7000pF N303AP M043 Diode ISL9N303AS3 N303AS PDF

    n318ad

    Abstract: ISL9N318AD3ST
    Text: ISL9N318AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N318AD3ST 900pF O-252 n318ad ISL9N318AD3ST PDF

    N316AD

    Abstract: No abstract text available
    Text: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N316AD3ST 1450pF O-252 N316AD PDF

    n327ad

    Abstract: ISL9N327AD3ST
    Text: ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N327AD3ST 910pF O-252 n327ad ISL9N327AD3ST PDF

    n312ad

    Abstract: 69E-10
    Text: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N312AD3ST 1450pF O-252 n312ad 69E-10 PDF

    N306AD

    Abstract: N306A
    Text: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AD3ST 3400pF O-252 N306AD N306A PDF

    1E25

    Abstract: No abstract text available
    Text: ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N302AS3ST 110nC, 11000pF O-263AB 1E25 PDF

    KMD7D5P

    Abstract: KMD7D5P40QA
    Text: SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit.


    Original     		KMD7D5P40QA KMD7D5P KMD7D5P40QA PDF

    n327ad

    Abstract: N327 ISL9N327AD3ST TO-252 MOSFET
    Text: ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N327AD3ST 910pF O-252 n327ad N327 ISL9N327AD3ST TO-252 MOSFET PDF

    MDD1754

    Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V


    Original     		MDD1754 MDD1754 MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs PDF

    MDS3754

    Abstract: MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET
    Text: P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description Features The MDS3754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = -40V ID = -6.0 @ VGS = -10V


    Original     		MDS3754 MDS3754 MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET PDF