diode 8a 600v
Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List
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Power247TM,
diode 8a 600v
4 pin optocoupler
4PIN optocoupler
bidirectional optocoupler toshiba
logic level complementary MOSFET
IGBT gate optocoupler driver for a buck converter
hma121
0.75KW
layout 48 VOLT 150 AMP smps
FET pair n-channel p-channel full bridge
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trench mosfet 30v 75 amps
Abstract: CMP60N03LD13
Text: CMP60N03LD13 N-CHANNEL TRENCH MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 10.8mΩ 55A Improved UIS Ruggedness
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CMP60N03LD13
O-252
trench mosfet 30v 75 amps
CMP60N03LD13
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catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance
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N4148
Abstract: mosfet inverter schematics P54C Si4410DY Si4435DY Si9145 switching power supply design ic 3525 pwm application dc to dc converter
Text: Power Supply Control ICs for Pentium Microprocessor Applications by Chae Lee, Richard K. Williams Siliconix incorporated A Member of the TEMIC Group 2201 Laurelwood Road Santa Clara, California 95056 408 988-8000 Abstract: The growing popularity of Pentium microprocessors requires an equally innovative
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Abstract: No abstract text available
Text: AON2260 60V N-Channel MOSFET General Description Product Summary The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,
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AON2260
AON2260
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v-technology
Abstract: 2X2B
Text: AON2260 60V N-Channel MOSFET General Description Product Summary The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,
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AON2260
AON2260
v-technology
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Abstract: No abstract text available
Text: Single N-channel MOSFET with schottky diode ELM14702AA-N •General description ■Features ELM14702AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=30V Id=11A Rds(on) < 16mΩ (Vgs=10V) Rds(on) < 25mΩ (Vgs=4.5V)
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ELM14702AA-N
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Text: Single N-channel MOSFET with schottky diode ELM14702AA-N •General description ■Features ELM14702AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=30V Id=11A Rds(on) < 16mΩ (Vgs=10V) Rds(on) < 25mΩ (Vgs=4.5V)
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ELM14702AA-N
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Text: Single N-channel MOSFET ELM14440AA-N •General description ■Features ELM14440AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted.
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Text: Single P-channel MOSFET with schottky diode ELM14701AA-N •General description ■Features ELM14701AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 49mΩ (Vgs=-10V)
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sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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Text: Single N-channel MOSFET ELM14440AA-N •General description ■Features ELM14440AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=5A (Vgs=10V) Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)
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Text: Single P-channel MOSFET with schottky diode ELM18701BA-S •General description ■Features ELM18701BA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-4.2A (Vgs=-10V) Rds(on) < 50mΩ (Vgs=-10V)
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VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system
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MS5-001-14
VRF2933FL
VRF164FL
ARF463AP1
Non - Isolated Buck, application
DRF1301
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Text: Single N-channel MOSFET ELM14438AA-N •General description ■Features ELM14438AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=8.2A (Vgs=10V) Rds(on) < 22mΩ (Vgs=10V)
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AO4702
Abstract: mosfet ao4702 MOSFET and parallel Schottky diode mosfet with schottky body diode AO4702L
Text: AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in
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AO4702and
mosfet ao4702
MOSFET and parallel Schottky diode
mosfet with schottky body diode
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Text: Dual N-channel MOSFET with schottky diode ELM14906AA-N •General description ■Features ELM14906AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=7A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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Text: Dual N-channel MOSFET with schottky diode ELM14902AA-N •General description ■Features ELM14902AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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Text: Dual N-channel MOSFET with schottky diode ELM14904AA-N •General description ■Features ELM14904AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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hp laptop MOTHERBOARD pcb CIRCUIT diagram
Abstract: ips 500w circuit diagram 800w class d circuit diagram schematics IRS2092 audio amplifier circuit diagram 700w audio amplifier circuit diagram schematic diagram Electronic Ballast xenon 2000w audio amplifier circuit diagram 1000w class d circuit diagram schematics IR2153 spice model circuit diagram of smps 400w DESKTOP
Text: Product Line Overview Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and manufacturing Bill of Material
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Abstract: AO4702 tr 212 mosfet ao4702
Text: AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in
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MOSFET and parallel Schottky diode
tr 212
mosfet ao4702
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Abstract: No abstract text available
Text: AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in
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Text: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)
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Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)
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